DE3131086A1 - Verfahren und vorrichtung zur oxidation von silicium-wafern - Google Patents

Verfahren und vorrichtung zur oxidation von silicium-wafern

Info

Publication number
DE3131086A1
DE3131086A1 DE19813131086 DE3131086A DE3131086A1 DE 3131086 A1 DE3131086 A1 DE 3131086A1 DE 19813131086 DE19813131086 DE 19813131086 DE 3131086 A DE3131086 A DE 3131086A DE 3131086 A1 DE3131086 A1 DE 3131086A1
Authority
DE
Germany
Prior art keywords
hcl
dipl
ing
mixture
oxidizing atmosphere
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE19813131086
Other languages
German (de)
English (en)
Inventor
Paul Felix 18104 Allentown Pa. Schmidt
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of DE3131086A1 publication Critical patent/DE3131086A1/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
    • H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
    • H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/005—Oxydation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02255—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by thermal treatment

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
DE19813131086 1980-08-11 1981-08-06 Verfahren und vorrichtung zur oxidation von silicium-wafern Withdrawn DE3131086A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US17690180A 1980-08-11 1980-08-11

Publications (1)

Publication Number Publication Date
DE3131086A1 true DE3131086A1 (de) 1982-03-25

Family

ID=22646361

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19813131086 Withdrawn DE3131086A1 (de) 1980-08-11 1981-08-06 Verfahren und vorrichtung zur oxidation von silicium-wafern

Country Status (5)

Country Link
JP (1) JPS5754331A (fr)
DE (1) DE3131086A1 (fr)
FR (1) FR2488443A1 (fr)
GB (1) GB2082384A (fr)
NL (1) NL8103752A (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0518182Y2 (fr) * 1985-01-25 1993-05-14
US4606935A (en) * 1985-10-10 1986-08-19 International Business Machines Corporation Process and apparatus for producing high purity oxidation on a semiconductor substrate
US5721176A (en) * 1992-05-29 1998-02-24 Olin Corporation Use of oxalyl chloride to form chloride-doped silicon dioxide films of silicon substrates

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2026156A1 (en) * 1970-05-29 1971-12-09 Licentia Gmbh Thermal oxidizer for solid bodies - using water vapour - enriched carrier gas as oxidant
CA936791A (en) * 1970-11-10 1973-11-13 Northern Electric Company Limited Method of reducing the mobile ion contamination in thermally grown silicon dioxide
US4167915A (en) * 1977-03-09 1979-09-18 Atomel Corporation High-pressure, high-temperature gaseous chemical apparatus
NL7903198A (nl) * 1979-04-24 1980-10-28 Philips Nv Werkwijze voor het vervaardigen van een halfgeleider- inrichting en halfgeleiderinrichting vervaardigd volgens de werkwijze.

Also Published As

Publication number Publication date
FR2488443A1 (fr) 1982-02-12
GB2082384A (en) 1982-03-03
JPS5754331A (fr) 1982-03-31
NL8103752A (nl) 1982-03-01

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Legal Events

Date Code Title Description
8130 Withdrawal