DE3070766D1 - Sense amplifier circuit - Google Patents

Sense amplifier circuit

Info

Publication number
DE3070766D1
DE3070766D1 DE8080300235T DE3070766T DE3070766D1 DE 3070766 D1 DE3070766 D1 DE 3070766D1 DE 8080300235 T DE8080300235 T DE 8080300235T DE 3070766 T DE3070766 T DE 3070766T DE 3070766 D1 DE3070766 D1 DE 3070766D1
Authority
DE
Germany
Prior art keywords
amplifier circuit
sense amplifier
sense
circuit
amplifier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8080300235T
Other languages
English (en)
Inventor
Takahiko Yamauchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Application granted granted Critical
Publication of DE3070766D1 publication Critical patent/DE3070766D1/de
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
    • G11C11/419—Read-write [R-W] circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/01—Modifications for accelerating switching
    • H03K19/017—Modifications for accelerating switching in field-effect transistor circuits
    • H03K19/01707—Modifications for accelerating switching in field-effect transistor circuits in asynchronous circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Static Random-Access Memory (AREA)
  • Dram (AREA)
  • Logic Circuits (AREA)
  • Manipulation Of Pulses (AREA)
DE8080300235T 1979-02-07 1980-01-24 Sense amplifier circuit Expired DE3070766D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP54013061A JPS5824874B2 (ja) 1979-02-07 1979-02-07 センス回路

Publications (1)

Publication Number Publication Date
DE3070766D1 true DE3070766D1 (en) 1985-07-25

Family

ID=11822608

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8080300235T Expired DE3070766D1 (en) 1979-02-07 1980-01-24 Sense amplifier circuit

Country Status (4)

Country Link
US (1) US4375039A (de)
EP (1) EP0015070B1 (de)
JP (1) JPS5824874B2 (de)
DE (1) DE3070766D1 (de)

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2081045A (en) * 1980-01-14 1982-02-10 American Micro Syst High resolution fast diode clamped comparator
JPS5856198B2 (ja) * 1980-09-25 1983-12-13 株式会社東芝 半導体記憶装置
JPS5838873B2 (ja) * 1980-10-15 1983-08-25 富士通株式会社 センス回路
JPS5783930A (en) * 1980-11-12 1982-05-26 Fujitsu Ltd Buffer circuit
JPH0831278B2 (ja) * 1981-03-09 1996-03-27 富士通株式会社 メモリ回路
USRE34060E (en) * 1981-06-01 1992-09-08 Hitachi, Ltd. High speed semiconductor memory device having a high gain sense amplifier
JPS57198594A (en) * 1981-06-01 1982-12-06 Hitachi Ltd Semiconductor storage device
US4665326A (en) * 1981-11-03 1987-05-12 Texas Instruments, Inc. Voltage comparator
US4456841A (en) * 1982-02-05 1984-06-26 International Business Machines Corporation Field effect level sensitive circuit
EP0085727B1 (de) * 1982-02-06 1986-04-30 Deutsche ITT Industries GmbH Integrierte Komparatorschaltung
JPS58168310A (ja) * 1982-03-30 1983-10-04 Fujitsu Ltd 出力回路
US4604533A (en) * 1982-12-28 1986-08-05 Tokyo Shibaura Denki Kabushiki Kaisha Sense amplifier
JPS59186188A (ja) * 1983-04-07 1984-10-22 Fujitsu Ltd センス増幅器
US4570090A (en) * 1983-06-30 1986-02-11 International Business Machines Corporation High-speed sense amplifier circuit with inhibit capability
US4553053A (en) * 1983-10-03 1985-11-12 Honeywell Information Systems Inc. Sense amplifier
US4616145A (en) * 1984-04-02 1986-10-07 General Electric Company Adjustable CMOS hysteresis limiter
US4618785A (en) * 1984-09-06 1986-10-21 Thomson Components - Mostek Corporation CMOS sense amplifier with level shifter
US4644197A (en) * 1985-01-28 1987-02-17 Motorola, Inc. Reduced power sense amplifier
JPS61224192A (ja) * 1985-03-29 1986-10-04 Sony Corp 読出し増幅器
US4641046A (en) * 1985-06-17 1987-02-03 Signetics Corporation NOR gate with logical low output clamp
JP2592234B2 (ja) * 1985-08-16 1997-03-19 富士通株式会社 半導体装置
US4636665A (en) * 1985-12-02 1987-01-13 Motorola, Inc. BIMOS memory sense amplifier
JPS62170097A (ja) * 1986-01-21 1987-07-27 Fujitsu Ltd 半導体記憶装置
JPS62231500A (ja) * 1986-03-31 1987-10-12 Toshiba Corp 半導体記憶装置
US4769564A (en) * 1987-05-15 1988-09-06 Analog Devices, Inc. Sense amplifier
JPH061022B2 (ja) * 1987-05-20 1994-01-05 株式会社大井製作所 自動車用ドアロック装置におけるポ−ル
DE3739467A1 (de) * 1987-11-21 1989-06-01 Philips Nv Schaltungsanordnung fuer eine doppel-busleitung
JPH0396009A (ja) * 1989-09-07 1991-04-22 Nec Corp クロック信号分配回路
US4990799A (en) * 1989-12-26 1991-02-05 Weiss Frederick G Low-hysteresis regenerative comparator
JPH0412085U (de) * 1990-05-19 1992-01-31
US5099156A (en) * 1990-10-02 1992-03-24 California Institute Of Technology Subthreshold MOS circuits for correlating analog input voltages
US5821799A (en) * 1996-10-25 1998-10-13 Cypress Semiconductor Corporation Low voltage level shifting circuit and low voltage sense amplifier
US20020149400A1 (en) * 2001-04-16 2002-10-17 Namik Kocaman Low voltage differential to single-ended converter

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5424600Y2 (de) * 1973-05-01 1979-08-20
JPS5342633A (en) * 1976-09-30 1978-04-18 Toshiba Corp Voltage sense circuit of semiconductor memory device
US4079332A (en) * 1976-11-22 1978-03-14 Rockwell International Corporation High gain differential amplifier

Also Published As

Publication number Publication date
JPS5824874B2 (ja) 1983-05-24
JPS55105436A (en) 1980-08-13
EP0015070B1 (de) 1985-06-19
EP0015070A1 (de) 1980-09-03
US4375039A (en) 1983-02-22

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition