DE3070766D1 - Sense amplifier circuit - Google Patents
Sense amplifier circuitInfo
- Publication number
- DE3070766D1 DE3070766D1 DE8080300235T DE3070766T DE3070766D1 DE 3070766 D1 DE3070766 D1 DE 3070766D1 DE 8080300235 T DE8080300235 T DE 8080300235T DE 3070766 T DE3070766 T DE 3070766T DE 3070766 D1 DE3070766 D1 DE 3070766D1
- Authority
- DE
- Germany
- Prior art keywords
- amplifier circuit
- sense amplifier
- sense
- circuit
- amplifier
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
- G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
- G11C11/419—Read-write [R-W] circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/01—Modifications for accelerating switching
- H03K19/017—Modifications for accelerating switching in field-effect transistor circuits
- H03K19/01707—Modifications for accelerating switching in field-effect transistor circuits in asynchronous circuits
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Computing Systems (AREA)
- General Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Static Random-Access Memory (AREA)
- Dram (AREA)
- Logic Circuits (AREA)
- Manipulation Of Pulses (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP54013061A JPS5824874B2 (ja) | 1979-02-07 | 1979-02-07 | センス回路 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3070766D1 true DE3070766D1 (en) | 1985-07-25 |
Family
ID=11822608
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8080300235T Expired DE3070766D1 (en) | 1979-02-07 | 1980-01-24 | Sense amplifier circuit |
Country Status (4)
Country | Link |
---|---|
US (1) | US4375039A (de) |
EP (1) | EP0015070B1 (de) |
JP (1) | JPS5824874B2 (de) |
DE (1) | DE3070766D1 (de) |
Families Citing this family (33)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2081045A (en) * | 1980-01-14 | 1982-02-10 | American Micro Syst | High resolution fast diode clamped comparator |
JPS5856198B2 (ja) * | 1980-09-25 | 1983-12-13 | 株式会社東芝 | 半導体記憶装置 |
JPS5838873B2 (ja) * | 1980-10-15 | 1983-08-25 | 富士通株式会社 | センス回路 |
JPS5783930A (en) * | 1980-11-12 | 1982-05-26 | Fujitsu Ltd | Buffer circuit |
JPH0831278B2 (ja) * | 1981-03-09 | 1996-03-27 | 富士通株式会社 | メモリ回路 |
USRE34060E (en) * | 1981-06-01 | 1992-09-08 | Hitachi, Ltd. | High speed semiconductor memory device having a high gain sense amplifier |
JPS57198594A (en) * | 1981-06-01 | 1982-12-06 | Hitachi Ltd | Semiconductor storage device |
US4665326A (en) * | 1981-11-03 | 1987-05-12 | Texas Instruments, Inc. | Voltage comparator |
US4456841A (en) * | 1982-02-05 | 1984-06-26 | International Business Machines Corporation | Field effect level sensitive circuit |
EP0085727B1 (de) * | 1982-02-06 | 1986-04-30 | Deutsche ITT Industries GmbH | Integrierte Komparatorschaltung |
JPS58168310A (ja) * | 1982-03-30 | 1983-10-04 | Fujitsu Ltd | 出力回路 |
US4604533A (en) * | 1982-12-28 | 1986-08-05 | Tokyo Shibaura Denki Kabushiki Kaisha | Sense amplifier |
JPS59186188A (ja) * | 1983-04-07 | 1984-10-22 | Fujitsu Ltd | センス増幅器 |
US4570090A (en) * | 1983-06-30 | 1986-02-11 | International Business Machines Corporation | High-speed sense amplifier circuit with inhibit capability |
US4553053A (en) * | 1983-10-03 | 1985-11-12 | Honeywell Information Systems Inc. | Sense amplifier |
US4616145A (en) * | 1984-04-02 | 1986-10-07 | General Electric Company | Adjustable CMOS hysteresis limiter |
US4618785A (en) * | 1984-09-06 | 1986-10-21 | Thomson Components - Mostek Corporation | CMOS sense amplifier with level shifter |
US4644197A (en) * | 1985-01-28 | 1987-02-17 | Motorola, Inc. | Reduced power sense amplifier |
JPS61224192A (ja) * | 1985-03-29 | 1986-10-04 | Sony Corp | 読出し増幅器 |
US4641046A (en) * | 1985-06-17 | 1987-02-03 | Signetics Corporation | NOR gate with logical low output clamp |
JP2592234B2 (ja) * | 1985-08-16 | 1997-03-19 | 富士通株式会社 | 半導体装置 |
US4636665A (en) * | 1985-12-02 | 1987-01-13 | Motorola, Inc. | BIMOS memory sense amplifier |
JPS62170097A (ja) * | 1986-01-21 | 1987-07-27 | Fujitsu Ltd | 半導体記憶装置 |
JPS62231500A (ja) * | 1986-03-31 | 1987-10-12 | Toshiba Corp | 半導体記憶装置 |
US4769564A (en) * | 1987-05-15 | 1988-09-06 | Analog Devices, Inc. | Sense amplifier |
JPH061022B2 (ja) * | 1987-05-20 | 1994-01-05 | 株式会社大井製作所 | 自動車用ドアロック装置におけるポ−ル |
DE3739467A1 (de) * | 1987-11-21 | 1989-06-01 | Philips Nv | Schaltungsanordnung fuer eine doppel-busleitung |
JPH0396009A (ja) * | 1989-09-07 | 1991-04-22 | Nec Corp | クロック信号分配回路 |
US4990799A (en) * | 1989-12-26 | 1991-02-05 | Weiss Frederick G | Low-hysteresis regenerative comparator |
JPH0412085U (de) * | 1990-05-19 | 1992-01-31 | ||
US5099156A (en) * | 1990-10-02 | 1992-03-24 | California Institute Of Technology | Subthreshold MOS circuits for correlating analog input voltages |
US5821799A (en) * | 1996-10-25 | 1998-10-13 | Cypress Semiconductor Corporation | Low voltage level shifting circuit and low voltage sense amplifier |
US20020149400A1 (en) * | 2001-04-16 | 2002-10-17 | Namik Kocaman | Low voltage differential to single-ended converter |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5424600Y2 (de) * | 1973-05-01 | 1979-08-20 | ||
JPS5342633A (en) * | 1976-09-30 | 1978-04-18 | Toshiba Corp | Voltage sense circuit of semiconductor memory device |
US4079332A (en) * | 1976-11-22 | 1978-03-14 | Rockwell International Corporation | High gain differential amplifier |
-
1979
- 1979-02-07 JP JP54013061A patent/JPS5824874B2/ja not_active Expired
-
1980
- 1980-01-24 DE DE8080300235T patent/DE3070766D1/de not_active Expired
- 1980-01-24 EP EP80300235A patent/EP0015070B1/de not_active Expired
- 1980-01-30 US US06/116,993 patent/US4375039A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPS5824874B2 (ja) | 1983-05-24 |
JPS55105436A (en) | 1980-08-13 |
EP0015070B1 (de) | 1985-06-19 |
EP0015070A1 (de) | 1980-09-03 |
US4375039A (en) | 1983-02-22 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |