DE3066537D1 - Method of producing a solid state device by differential plasma etching of resists - Google Patents
Method of producing a solid state device by differential plasma etching of resistsInfo
- Publication number
- DE3066537D1 DE3066537D1 DE8080101269T DE3066537T DE3066537D1 DE 3066537 D1 DE3066537 D1 DE 3066537D1 DE 8080101269 T DE8080101269 T DE 8080101269T DE 3066537 T DE3066537 T DE 3066537T DE 3066537 D1 DE3066537 D1 DE 3066537D1
- Authority
- DE
- Germany
- Prior art keywords
- resists
- producing
- solid state
- plasma etching
- state device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000000034 method Methods 0.000 title 1
- 238000001020 plasma etching Methods 0.000 title 1
- 239000007787 solid Substances 0.000 title 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/36—Imagewise removal not covered by groups G03F7/30 - G03F7/34, e.g. using gas streams, using plasma
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
- G03F7/033—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polymers obtained by reactions only involving carbon-to-carbon unsaturated bonds, e.g. vinyl polymers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
- H01L21/31138—Etching organic layers by chemical means by dry-etching
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/167—X-ray
- Y10S430/168—X-ray exposure process
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Power Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Drying Of Semiconductors (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Polymerisation Methods In General (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/019,711 US4232110A (en) | 1979-03-12 | 1979-03-12 | Solid state devices formed by differential plasma etching of resists |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3066537D1 true DE3066537D1 (en) | 1984-03-22 |
Family
ID=21794629
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8080101269T Expired DE3066537D1 (en) | 1979-03-12 | 1980-03-12 | Method of producing a solid state device by differential plasma etching of resists |
Country Status (7)
Country | Link |
---|---|
US (1) | US4232110A (de) |
EP (1) | EP0017032B1 (de) |
JP (1) | JPS56500097A (de) |
CA (1) | CA1134953A (de) |
DE (1) | DE3066537D1 (de) |
ES (1) | ES489416A0 (de) |
WO (1) | WO1980001978A1 (de) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4345021A (en) * | 1979-09-25 | 1982-08-17 | Matsushita Electric Industrial Co., Ltd. | Solid-state image pickup element and process for fabricating the same |
JPS5744143A (en) * | 1980-08-29 | 1982-03-12 | Tokyo Ohka Kogyo Co Ltd | Composition and method for forming micropattern |
JPS57157523A (en) * | 1981-03-25 | 1982-09-29 | Hitachi Ltd | Forming method for pattern |
US4396704A (en) * | 1981-04-22 | 1983-08-02 | Bell Telephone Laboratories, Incorporated | Solid state devices produced by organometallic plasma developed resists |
US4500628A (en) * | 1981-04-22 | 1985-02-19 | At&T Bell Laboratories | Process of making solid state devices using silicon containing organometallic plasma developed resists |
JPS57202534A (en) * | 1981-06-09 | 1982-12-11 | Fujitsu Ltd | Negative type resist composition |
JPS57202537A (en) * | 1981-06-09 | 1982-12-11 | Fujitsu Ltd | Resist composition for dry development |
US4400235A (en) * | 1982-03-25 | 1983-08-23 | Bell Telephone Laboratories, Incorporated | Etching apparatus and method |
EP0091651B1 (de) * | 1982-04-12 | 1988-08-03 | Nippon Telegraph And Telephone Corporation | Verfahren zur Herstellung von Mikrobildern |
US4665541A (en) * | 1983-06-06 | 1987-05-12 | The University Of Rochester | X-ray lithography |
US5215867A (en) * | 1983-09-16 | 1993-06-01 | At&T Bell Laboratories | Method with gas functionalized plasma developed layer |
US4596761A (en) * | 1983-11-02 | 1986-06-24 | Hughes Aircraft Company | Graft polymerized SiO2 lithographic masks |
WO1985002030A1 (en) * | 1983-11-02 | 1985-05-09 | Hughes Aircraft Company | GRAFT POLYMERIZED SiO2 LITHOGRAPHIC MASKS |
GB8427149D0 (en) * | 1984-10-26 | 1984-12-05 | Ucb Sa | Resist materials |
CA1267378A (en) * | 1984-12-07 | 1990-04-03 | Jer-Ming Yang | Top imaged and organosilicon treated polymer layer developable with plasma |
US4751170A (en) * | 1985-07-26 | 1988-06-14 | Nippon Telegraph And Telephone Corporation | Silylation method onto surface of polymer membrane and pattern formation process by the utilization of silylation method |
US5094936A (en) * | 1988-09-16 | 1992-03-10 | Texas Instruments Incorporated | High pressure photoresist silylation process and apparatus |
KR0140472B1 (ko) * | 1994-10-12 | 1998-06-15 | 김주용 | 감광막 패턴 형성방법 |
US7742672B2 (en) * | 2005-08-24 | 2010-06-22 | General Electric Company | Composition, optical device article, and associated method |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
BE560986A (de) * | 1956-09-21 | |||
US3816198A (en) * | 1969-09-22 | 1974-06-11 | G Babcock | Selective plasma etching of organic materials employing photolithographic techniques |
US3871885A (en) * | 1971-05-18 | 1975-03-18 | Du Pont | Crystalline photo-polymerizable composition |
US3816196A (en) * | 1971-06-07 | 1974-06-11 | Gen Electric | Passivation of photoresist materials used in selective plasma etching |
US3809732A (en) * | 1972-12-18 | 1974-05-07 | Bell Telephone Labor Inc | Photo-locking technique for producing integrated optical circuits |
US3916035A (en) * | 1973-11-05 | 1975-10-28 | Texas Instruments Inc | Epoxy-polymer electron beam resists |
US3953620A (en) * | 1974-12-06 | 1976-04-27 | Bell Telephone Laboratories, Incorporated | Producing integrated optical circuits |
DE2726813C2 (de) | 1976-06-17 | 1984-02-23 | Motorola, Inc., 60196 Schaumburg, Ill. | Verfahren zur Herstellung eines mit einem Muster versehenen Substrats |
FR2389922B1 (de) * | 1977-05-03 | 1981-08-28 | Thomson Csf |
-
1979
- 1979-03-12 US US06/019,711 patent/US4232110A/en not_active Expired - Lifetime
-
1980
- 1980-02-28 JP JP50069080A patent/JPS56500097A/ja active Pending
- 1980-02-28 WO PCT/US1980/000200 patent/WO1980001978A1/en unknown
- 1980-03-11 CA CA000347419A patent/CA1134953A/en not_active Expired
- 1980-03-11 ES ES489416A patent/ES489416A0/es active Granted
- 1980-03-12 DE DE8080101269T patent/DE3066537D1/de not_active Expired
- 1980-03-12 EP EP80101269A patent/EP0017032B1/de not_active Expired
Also Published As
Publication number | Publication date |
---|---|
US4232110A (en) | 1980-11-04 |
JPS56500097A (de) | 1981-01-29 |
EP0017032A2 (de) | 1980-10-15 |
ES8103476A1 (es) | 1981-02-16 |
ES489416A0 (es) | 1981-02-16 |
CA1134953A (en) | 1982-11-02 |
EP0017032A3 (en) | 1981-07-15 |
WO1980001978A1 (en) | 1980-09-18 |
EP0017032B1 (de) | 1984-02-15 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8330 | Complete renunciation |