ES8103476A1 - Procedimiento para la produccion de dispositivos en estado solido mediante tecnicas de procesado con plasma - Google Patents

Procedimiento para la produccion de dispositivos en estado solido mediante tecnicas de procesado con plasma

Info

Publication number
ES8103476A1
ES8103476A1 ES489416A ES489416A ES8103476A1 ES 8103476 A1 ES8103476 A1 ES 8103476A1 ES 489416 A ES489416 A ES 489416A ES 489416 A ES489416 A ES 489416A ES 8103476 A1 ES8103476 A1 ES 8103476A1
Authority
ES
Spain
Prior art keywords
monomers
film
solid state
monomer
resists
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES489416A
Other languages
English (en)
Other versions
ES489416A0 (es
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of ES8103476A1 publication Critical patent/ES8103476A1/es
Publication of ES489416A0 publication Critical patent/ES489416A0/es
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/36—Imagewise removal not covered by groups G03F7/30 - G03F7/34, e.g. using gas streams, using plasma
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
    • G03F7/033—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polymers obtained by reactions only involving carbon-to-carbon unsaturated bonds, e.g. vinyl polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • H01L21/31138—Etching organic layers by chemical means by dry-etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/167—X-ray
    • Y10S430/168—X-ray exposure process

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Power Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Drying Of Semiconductors (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Polymerisation Methods In General (AREA)

Abstract

PROCEDIMIENTO PARA PRODUCIR MODELOS PROTECTORES NEGATIVOS PARA DISPOSITIVOS EN ESTADO SOLIDO, MEDIANTE IRRADIACION Y PROCESADO CON PLASMA. UN MATERIAL MONOMERICO DISUELTO SENSIBLE A LA RADIACION ELECTROMAGNETICA SE APLICA SOBRE UN SUSTRATO POLIMERICO Y SE SECA; A CONTINUACION SE IRRADIA CON UNA RADIACION DE ONDA ADECUADA A TRAVES DE UNA MASCARA QUE REPRODUCE EL MODELO DESEADO; POR CALENTAMIENTO SE ELIMINA EL MONOMERO NO FIJADO POR LA RADIACION, Y LUEGO, POR TRATAMIENTO CON PLASMA, SE ELIMINA EL POLIMERO DEL SUSTRATO ALLI DONDE NO ESTA PROTEGIDO POR EL MONOMERO IRRADIADO.
ES489416A 1979-03-12 1980-03-11 Procedimiento para la produccion de dispositivos en estado solido mediante tecnicas de procesado con plasma Granted ES489416A0 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/019,711 US4232110A (en) 1979-03-12 1979-03-12 Solid state devices formed by differential plasma etching of resists

Publications (2)

Publication Number Publication Date
ES8103476A1 true ES8103476A1 (es) 1981-02-16
ES489416A0 ES489416A0 (es) 1981-02-16

Family

ID=21794629

Family Applications (1)

Application Number Title Priority Date Filing Date
ES489416A Granted ES489416A0 (es) 1979-03-12 1980-03-11 Procedimiento para la produccion de dispositivos en estado solido mediante tecnicas de procesado con plasma

Country Status (7)

Country Link
US (1) US4232110A (es)
EP (1) EP0017032B1 (es)
JP (1) JPS56500097A (es)
CA (1) CA1134953A (es)
DE (1) DE3066537D1 (es)
ES (1) ES489416A0 (es)
WO (1) WO1980001978A1 (es)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4345021A (en) * 1979-09-25 1982-08-17 Matsushita Electric Industrial Co., Ltd. Solid-state image pickup element and process for fabricating the same
JPS5744143A (en) * 1980-08-29 1982-03-12 Tokyo Ohka Kogyo Co Ltd Composition and method for forming micropattern
JPS57157523A (en) * 1981-03-25 1982-09-29 Hitachi Ltd Forming method for pattern
US4396704A (en) * 1981-04-22 1983-08-02 Bell Telephone Laboratories, Incorporated Solid state devices produced by organometallic plasma developed resists
US4500628A (en) * 1981-04-22 1985-02-19 At&T Bell Laboratories Process of making solid state devices using silicon containing organometallic plasma developed resists
JPS57202534A (en) * 1981-06-09 1982-12-11 Fujitsu Ltd Negative type resist composition
JPS57202537A (en) * 1981-06-09 1982-12-11 Fujitsu Ltd Resist composition for dry development
US4400235A (en) * 1982-03-25 1983-08-23 Bell Telephone Laboratories, Incorporated Etching apparatus and method
EP0091651B1 (en) * 1982-04-12 1988-08-03 Nippon Telegraph And Telephone Corporation Method for forming micropattern
US4665541A (en) * 1983-06-06 1987-05-12 The University Of Rochester X-ray lithography
US5215867A (en) * 1983-09-16 1993-06-01 At&T Bell Laboratories Method with gas functionalized plasma developed layer
DE3468754D1 (en) * 1983-11-02 1988-02-18 Hughes Aircraft Co Graft polymerized sio 2? lithographic masks
US4596761A (en) * 1983-11-02 1986-06-24 Hughes Aircraft Company Graft polymerized SiO2 lithographic masks
GB8427149D0 (en) * 1984-10-26 1984-12-05 Ucb Sa Resist materials
CA1267378A (en) * 1984-12-07 1990-04-03 Jer-Ming Yang Top imaged and organosilicon treated polymer layer developable with plasma
US4751170A (en) * 1985-07-26 1988-06-14 Nippon Telegraph And Telephone Corporation Silylation method onto surface of polymer membrane and pattern formation process by the utilization of silylation method
US5094936A (en) * 1988-09-16 1992-03-10 Texas Instruments Incorporated High pressure photoresist silylation process and apparatus
KR0140472B1 (ko) * 1994-10-12 1998-06-15 김주용 감광막 패턴 형성방법
US7742672B2 (en) * 2005-08-24 2010-06-22 General Electric Company Composition, optical device article, and associated method

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE560986A (es) * 1956-09-21
US3816198A (en) * 1969-09-22 1974-06-11 G Babcock Selective plasma etching of organic materials employing photolithographic techniques
US3871885A (en) * 1971-05-18 1975-03-18 Du Pont Crystalline photo-polymerizable composition
US3816196A (en) * 1971-06-07 1974-06-11 Gen Electric Passivation of photoresist materials used in selective plasma etching
US3809732A (en) * 1972-12-18 1974-05-07 Bell Telephone Labor Inc Photo-locking technique for producing integrated optical circuits
US3916035A (en) * 1973-11-05 1975-10-28 Texas Instruments Inc Epoxy-polymer electron beam resists
US3953620A (en) * 1974-12-06 1976-04-27 Bell Telephone Laboratories, Incorporated Producing integrated optical circuits
DE2726813C2 (de) 1976-06-17 1984-02-23 Motorola, Inc., 60196 Schaumburg, Ill. Verfahren zur Herstellung eines mit einem Muster versehenen Substrats
FR2389922B1 (es) * 1977-05-03 1981-08-28 Thomson Csf

Also Published As

Publication number Publication date
DE3066537D1 (en) 1984-03-22
EP0017032A3 (en) 1981-07-15
EP0017032A2 (en) 1980-10-15
ES489416A0 (es) 1981-02-16
EP0017032B1 (en) 1984-02-15
CA1134953A (en) 1982-11-02
WO1980001978A1 (en) 1980-09-18
JPS56500097A (es) 1981-01-29
US4232110A (en) 1980-11-04

Similar Documents

Publication Publication Date Title
ES8103476A1 (es) Procedimiento para la produccion de dispositivos en estado solido mediante tecnicas de procesado con plasma
US4731155A (en) Process for forming a lithographic mask
EP0060585B1 (en) Method of applying a resist pattern on a substrate, and resist material mixture
CA1250177A (en) Process for preparing negative relief images
EP0067066B2 (en) Dry-developing resist composition
US4568601A (en) Use of radiation sensitive polymerizable oligomers to produce polyimide negative resists and planarized dielectric components for semiconductor structures
EP0005551A2 (en) Article comprising a substrate and an overlying layer of electron beam radiation-sensitive material and process for fabrication thereof
US5068169A (en) Process for production of semiconductor device
JPS5835527B2 (ja) 電子官能性樹脂
EP0093202B1 (en) Poly(halostyrene) for negative resists
Meyer et al. Plasma developable positive UV-resists
US4397939A (en) Method of using a positive electron beam resist medium
JPH0453419B2 (es)
JPS5886726A (ja) パタ−ン形成法
EP0334906B1 (en) Silicon-containing negative resist material, and process for its use in patterning substrates
JPS61294433A (ja) 高解像度感光性樹脂組成物およびこれを使用するサブミクロンパタ−ンの製造方法
JPS5817105A (ja) 電離放射線感応性材料
US4243742A (en) Radiation-sensitive positively acting materials
US4678850A (en) Halogenated polystyrenes for electron beam, X-ray and photo resists
JPS62108244A (ja) ２層用ポジ型感光性組成物及びパタ−ン形成方法
JPS6368612A (ja) α−トリフルオロメチルアクリル酸共重合体
JPS61294432A (ja) パタ−ン形成材料及びパタ−ン形成方法
JPS58187923A (ja) 放射線感応性レジスト材を用いる微細加工法
JPS62299965A (ja) ネガ形レジスト組成物
DE10030016A1 (de) Themostabile und plasmaätzbeständige Polymere zur Erzeugung von Nanostrukturen in dünner Schicht durch Nanoimprintlithographie