DE3064240D1 - Integrated monolithic circuit equivalent to a transistor associated with three antisaturation diodes, and method for making it - Google Patents

Integrated monolithic circuit equivalent to a transistor associated with three antisaturation diodes, and method for making it

Info

Publication number
DE3064240D1
DE3064240D1 DE8080400834T DE3064240T DE3064240D1 DE 3064240 D1 DE3064240 D1 DE 3064240D1 DE 8080400834 T DE8080400834 T DE 8080400834T DE 3064240 T DE3064240 T DE 3064240T DE 3064240 D1 DE3064240 D1 DE 3064240D1
Authority
DE
Germany
Prior art keywords
antisaturation
diodes
making
circuit equivalent
transistor associated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8080400834T
Other languages
German (de)
English (en)
Inventor
Jean-Baptiste Quoirin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Application granted granted Critical
Publication of DE3064240D1 publication Critical patent/DE3064240D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/641—Combinations of only vertical BJTs
    • H10D84/642—Combinations of non-inverted vertical BJTs of the same conductivity type having different characteristics, e.g. Darlington transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H10D84/617—Combinations of vertical BJTs and only diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
DE8080400834T 1979-06-12 1980-06-10 Integrated monolithic circuit equivalent to a transistor associated with three antisaturation diodes, and method for making it Expired DE3064240D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7914996A FR2458904A1 (fr) 1979-06-12 1979-06-12 Circuit integre monolithique equivalent a un transistor associe a trois diodes anti-saturation

Publications (1)

Publication Number Publication Date
DE3064240D1 true DE3064240D1 (en) 1983-08-25

Family

ID=9226482

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8080400834T Expired DE3064240D1 (en) 1979-06-12 1980-06-10 Integrated monolithic circuit equivalent to a transistor associated with three antisaturation diodes, and method for making it

Country Status (5)

Country Link
US (1) US4482911A (OSRAM)
EP (1) EP0022687B1 (OSRAM)
JP (1) JPS562665A (OSRAM)
DE (1) DE3064240D1 (OSRAM)
FR (1) FR2458904A1 (OSRAM)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3227536A1 (de) * 1982-01-20 1983-07-28 Robert Bosch Gmbh, 7000 Stuttgart Darlington-transistorschaltung
DE3201545A1 (de) * 1982-01-20 1983-07-28 Robert Bosch Gmbh, 7000 Stuttgart Planare halbleiteranordnung
IT1221867B (it) * 1983-05-16 1990-07-12 Ates Componenti Elettron Struttura di transistore bipolare di potenza con resistenza di bilanciamento di base incroporata by-passable
JPS612072A (ja) * 1984-06-15 1986-01-08 Yokogawa Hokushin Electric Corp シアンイオン濃度の測定方法およびその測定装置
JPS61112421A (ja) * 1984-11-06 1986-05-30 Mitsubishi Electric Corp バイポ−ラ・ダ−リントン・パワ−トランジスタの駆動回路
JPS61152071A (ja) * 1984-12-26 1986-07-10 Toshiba Corp 多段ダ−リントン半導体装置
US4936928A (en) * 1985-11-27 1990-06-26 Raytheon Company Semiconductor device
GB2183907B (en) * 1985-11-27 1989-10-04 Raytheon Co Semiconductor device
JPS62214660A (ja) * 1986-03-17 1987-09-21 Toshiba Corp 半導体装置
JPS62250661A (ja) * 1986-04-23 1987-10-31 Fuji Electric Co Ltd 半導体装置

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3335341A (en) * 1964-03-06 1967-08-08 Westinghouse Electric Corp Diode structure in semiconductor integrated circuit and method of making the same
US3423647A (en) * 1964-07-30 1969-01-21 Nippon Electric Co Semiconductor device having regions with preselected different minority carrier lifetimes
US3417260A (en) * 1965-05-24 1968-12-17 Motorola Inc Monolithic integrated diode-transistor logic circuit having improved switching characteristics
US3525911A (en) * 1968-06-06 1970-08-25 Westinghouse Electric Corp Semiconductor integrated circuit including improved diode structure
US3629623A (en) * 1968-11-01 1971-12-21 Nippon Denso Co Composite semiconductor device and semiconductor voltage regulator device for vehicles
US3770519A (en) * 1970-08-05 1973-11-06 Ibm Isolation diffusion method for making reduced beta transistor or diodes
US3995307A (en) * 1973-12-28 1976-11-30 International Business Machines Corporation Integrated monolithic switch for high voltage applications
US3913213A (en) * 1974-08-02 1975-10-21 Trw Inc Integrated circuit transistor switch
IN141922B (OSRAM) * 1974-08-19 1977-05-07 Rca Corp
US4072981A (en) * 1975-03-25 1978-02-07 Texas Instruments Incorporated Fast switching Darlington circuit
US4031416A (en) * 1976-03-08 1977-06-21 General Electric Company Semiconductor amplification means combining two cascaded transistor amplifiers of high inverse impedances
JPS52149666U (OSRAM) * 1976-05-11 1977-11-12
FR2377706A1 (fr) * 1977-01-12 1978-08-11 Radiotechnique Compelec Dispositif semi-conducteur integre du type darlington et son procede de fabrication
JPS5559767A (en) * 1978-10-30 1980-05-06 Hitachi Ltd Semiconductor device, method of fabricating the same and application thereof

Also Published As

Publication number Publication date
US4482911A (en) 1984-11-13
FR2458904A1 (fr) 1981-01-02
EP0022687A1 (fr) 1981-01-21
JPS562665A (en) 1981-01-12
FR2458904B1 (OSRAM) 1983-04-29
EP0022687B1 (fr) 1983-07-20

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