FR2458904B1 - - Google Patents
Info
- Publication number
- FR2458904B1 FR2458904B1 FR7914996A FR7914996A FR2458904B1 FR 2458904 B1 FR2458904 B1 FR 2458904B1 FR 7914996 A FR7914996 A FR 7914996A FR 7914996 A FR7914996 A FR 7914996A FR 2458904 B1 FR2458904 B1 FR 2458904B1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/641—Combinations of only vertical BJTs
- H10D84/642—Combinations of non-inverted vertical BJTs of the same conductivity type having different characteristics, e.g. Darlington transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
- H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
- H10D84/617—Combinations of vertical BJTs and only diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
- H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7914996A FR2458904A1 (fr) | 1979-06-12 | 1979-06-12 | Circuit integre monolithique equivalent a un transistor associe a trois diodes anti-saturation |
| DE8080400834T DE3064240D1 (en) | 1979-06-12 | 1980-06-10 | Integrated monolithic circuit equivalent to a transistor associated with three antisaturation diodes, and method for making it |
| EP80400834A EP0022687B1 (fr) | 1979-06-12 | 1980-06-10 | Circuit intégré monolithique équivalent à un transistor associé à trois diodes anti-saturation et son procédé de fabrication |
| US06/158,581 US4482911A (en) | 1979-06-12 | 1980-06-11 | Monolithic integrated circuit equivalent to a transistor associated with three antisaturation diodes |
| JP7843980A JPS562665A (en) | 1979-06-12 | 1980-06-12 | Monolithic integrated circuit equivalent to transistor having three unsaturable diodes |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7914996A FR2458904A1 (fr) | 1979-06-12 | 1979-06-12 | Circuit integre monolithique equivalent a un transistor associe a trois diodes anti-saturation |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2458904A1 FR2458904A1 (fr) | 1981-01-02 |
| FR2458904B1 true FR2458904B1 (OSRAM) | 1983-04-29 |
Family
ID=9226482
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR7914996A Granted FR2458904A1 (fr) | 1979-06-12 | 1979-06-12 | Circuit integre monolithique equivalent a un transistor associe a trois diodes anti-saturation |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US4482911A (OSRAM) |
| EP (1) | EP0022687B1 (OSRAM) |
| JP (1) | JPS562665A (OSRAM) |
| DE (1) | DE3064240D1 (OSRAM) |
| FR (1) | FR2458904A1 (OSRAM) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3227536A1 (de) * | 1982-01-20 | 1983-07-28 | Robert Bosch Gmbh, 7000 Stuttgart | Darlington-transistorschaltung |
| DE3201545A1 (de) * | 1982-01-20 | 1983-07-28 | Robert Bosch Gmbh, 7000 Stuttgart | Planare halbleiteranordnung |
| IT1221867B (it) * | 1983-05-16 | 1990-07-12 | Ates Componenti Elettron | Struttura di transistore bipolare di potenza con resistenza di bilanciamento di base incroporata by-passable |
| JPS612072A (ja) * | 1984-06-15 | 1986-01-08 | Yokogawa Hokushin Electric Corp | シアンイオン濃度の測定方法およびその測定装置 |
| JPS61112421A (ja) * | 1984-11-06 | 1986-05-30 | Mitsubishi Electric Corp | バイポ−ラ・ダ−リントン・パワ−トランジスタの駆動回路 |
| JPS61152071A (ja) * | 1984-12-26 | 1986-07-10 | Toshiba Corp | 多段ダ−リントン半導体装置 |
| US4936928A (en) * | 1985-11-27 | 1990-06-26 | Raytheon Company | Semiconductor device |
| GB2183907B (en) * | 1985-11-27 | 1989-10-04 | Raytheon Co | Semiconductor device |
| JPS62214660A (ja) * | 1986-03-17 | 1987-09-21 | Toshiba Corp | 半導体装置 |
| JPS62250661A (ja) * | 1986-04-23 | 1987-10-31 | Fuji Electric Co Ltd | 半導体装置 |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3335341A (en) * | 1964-03-06 | 1967-08-08 | Westinghouse Electric Corp | Diode structure in semiconductor integrated circuit and method of making the same |
| US3423647A (en) * | 1964-07-30 | 1969-01-21 | Nippon Electric Co | Semiconductor device having regions with preselected different minority carrier lifetimes |
| US3417260A (en) * | 1965-05-24 | 1968-12-17 | Motorola Inc | Monolithic integrated diode-transistor logic circuit having improved switching characteristics |
| US3525911A (en) * | 1968-06-06 | 1970-08-25 | Westinghouse Electric Corp | Semiconductor integrated circuit including improved diode structure |
| US3629623A (en) * | 1968-11-01 | 1971-12-21 | Nippon Denso Co | Composite semiconductor device and semiconductor voltage regulator device for vehicles |
| US3770519A (en) * | 1970-08-05 | 1973-11-06 | Ibm | Isolation diffusion method for making reduced beta transistor or diodes |
| US3995307A (en) * | 1973-12-28 | 1976-11-30 | International Business Machines Corporation | Integrated monolithic switch for high voltage applications |
| US3913213A (en) * | 1974-08-02 | 1975-10-21 | Trw Inc | Integrated circuit transistor switch |
| IN141922B (OSRAM) * | 1974-08-19 | 1977-05-07 | Rca Corp | |
| US4072981A (en) * | 1975-03-25 | 1978-02-07 | Texas Instruments Incorporated | Fast switching Darlington circuit |
| US4031416A (en) * | 1976-03-08 | 1977-06-21 | General Electric Company | Semiconductor amplification means combining two cascaded transistor amplifiers of high inverse impedances |
| JPS52149666U (OSRAM) * | 1976-05-11 | 1977-11-12 | ||
| FR2377706A1 (fr) * | 1977-01-12 | 1978-08-11 | Radiotechnique Compelec | Dispositif semi-conducteur integre du type darlington et son procede de fabrication |
| JPS5559767A (en) * | 1978-10-30 | 1980-05-06 | Hitachi Ltd | Semiconductor device, method of fabricating the same and application thereof |
-
1979
- 1979-06-12 FR FR7914996A patent/FR2458904A1/fr active Granted
-
1980
- 1980-06-10 DE DE8080400834T patent/DE3064240D1/de not_active Expired
- 1980-06-10 EP EP80400834A patent/EP0022687B1/fr not_active Expired
- 1980-06-11 US US06/158,581 patent/US4482911A/en not_active Expired - Lifetime
- 1980-06-12 JP JP7843980A patent/JPS562665A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| US4482911A (en) | 1984-11-13 |
| FR2458904A1 (fr) | 1981-01-02 |
| EP0022687A1 (fr) | 1981-01-21 |
| JPS562665A (en) | 1981-01-12 |
| DE3064240D1 (en) | 1983-08-25 |
| EP0022687B1 (fr) | 1983-07-20 |