DE3038910C2 - - Google Patents
Info
- Publication number
- DE3038910C2 DE3038910C2 DE3038910A DE3038910A DE3038910C2 DE 3038910 C2 DE3038910 C2 DE 3038910C2 DE 3038910 A DE3038910 A DE 3038910A DE 3038910 A DE3038910 A DE 3038910A DE 3038910 C2 DE3038910 C2 DE 3038910C2
- Authority
- DE
- Germany
- Prior art keywords
- silicon
- detector
- processing electronics
- layer
- etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 23
- 229910052710 silicon Inorganic materials 0.000 claims description 22
- 239000010703 silicon Substances 0.000 claims description 21
- 238000005530 etching Methods 0.000 claims description 19
- 238000000034 method Methods 0.000 claims description 19
- 238000009792 diffusion process Methods 0.000 claims description 10
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 9
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 claims description 7
- 239000013078 crystal Substances 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 230000001419 dependent effect Effects 0.000 claims description 3
- 238000001514 detection method Methods 0.000 claims description 3
- 239000011159 matrix material Substances 0.000 claims description 3
- 238000010884 ion-beam technique Methods 0.000 claims 1
- 238000005516 engineering process Methods 0.000 description 7
- 230000005855 radiation Effects 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000000407 epitaxy Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 239000002210 silicon-based material Substances 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 101100346656 Drosophila melanogaster strat gene Proteins 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000007858 starting material Substances 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910000661 Mercury cadmium telluride Chemical class 0.000 description 1
- 229910002665 PbTe Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 125000004437 phosphorous atom Chemical group 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000029305 taxis Effects 0.000 description 1
- OCGWQDWYSQAFTO-UHFFFAOYSA-N tellanylidenelead Chemical class [Pb]=[Te] OCGWQDWYSQAFTO-UHFFFAOYSA-N 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- -1 thalium Chemical compound 0.000 description 1
- 238000001931 thermography Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/121—The active layers comprising only Group IV materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/15—Charge-coupled device [CCD] image sensors
- H10F39/157—CCD or CID infrared image sensors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Light Receiving Elements (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19803038910 DE3038910A1 (de) | 1980-10-15 | 1980-10-15 | Verfahren zur herstellung eines infrarotempfindlichen silizium-substrats mit integrierter verarbeitungselektronik |
| US06/346,730 US4652901A (en) | 1980-10-15 | 1981-10-06 | Infrared sensitive silicon substrate with integrated electronic processing devices and method for producing same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19803038910 DE3038910A1 (de) | 1980-10-15 | 1980-10-15 | Verfahren zur herstellung eines infrarotempfindlichen silizium-substrats mit integrierter verarbeitungselektronik |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE3038910A1 DE3038910A1 (de) | 1986-06-19 |
| DE3038910C2 true DE3038910C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1990-01-11 |
Family
ID=6114425
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19803038910 Granted DE3038910A1 (de) | 1980-10-15 | 1980-10-15 | Verfahren zur herstellung eines infrarotempfindlichen silizium-substrats mit integrierter verarbeitungselektronik |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US4652901A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
| DE (1) | DE3038910A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19731241A1 (de) * | 1997-07-21 | 1999-02-11 | Fraunhofer Ges Forschung | Vorrichtung zur Bestimmung von Fluidkomponenten |
| DE10057656C1 (de) * | 2000-11-21 | 2002-04-04 | Rossendorf Forschzent | Verfahren zur Herstellung von integrierten Abtastnadeln |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3835700A1 (de) * | 1988-10-20 | 1990-04-26 | Licentia Gmbh | Anordnung und verfahren zur herstellung eines bildsensors |
| DE4113356A1 (de) * | 1991-04-24 | 1992-10-29 | Siemens Ag | Photodetektor in silizium fuer den bereich von 1,3 (my)m |
| US6294469B1 (en) * | 1999-05-21 | 2001-09-25 | Plasmasil, Llc | Silicon wafering process flow |
| US6838669B1 (en) | 2002-04-25 | 2005-01-04 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Wide operational range thermal sensor |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4203799A (en) * | 1975-05-30 | 1980-05-20 | Hitachi, Ltd. | Method for monitoring thickness of epitaxial growth layer on substrate |
| FR2426335A1 (fr) * | 1978-05-19 | 1979-12-14 | Radiotechnique Compelec | Dispositif semi-conducteur monolithique comportant une pluralite de cellules photosensibles |
| DE2919936A1 (de) * | 1979-05-17 | 1980-11-20 | Licentia Gmbh | Verfahren und schaltungsanordnung zur trennung des thermischen hintergrundsignals eines ir-detektors vom nutzsignal |
| US4357183A (en) * | 1980-08-13 | 1982-11-02 | Massachusetts Institute Of Technology | Heteroepitaxy of germanium silicon on silicon utilizing alloying control |
| US4430149A (en) * | 1981-12-30 | 1984-02-07 | Rca Corporation | Chemical vapor deposition of epitaxial silicon |
-
1980
- 1980-10-15 DE DE19803038910 patent/DE3038910A1/de active Granted
-
1981
- 1981-10-06 US US06/346,730 patent/US4652901A/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19731241A1 (de) * | 1997-07-21 | 1999-02-11 | Fraunhofer Ges Forschung | Vorrichtung zur Bestimmung von Fluidkomponenten |
| DE19731241C2 (de) * | 1997-07-21 | 1999-09-23 | Fraunhofer Ges Forschung | Vorrichtung und Verfahren zur Bestimmung von Fluidkomponenten und Verfahren zur Herstellung der Vorrichtung |
| DE10057656C1 (de) * | 2000-11-21 | 2002-04-04 | Rossendorf Forschzent | Verfahren zur Herstellung von integrierten Abtastnadeln |
Also Published As
| Publication number | Publication date |
|---|---|
| US4652901A (en) | 1987-03-24 |
| DE3038910A1 (de) | 1986-06-19 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE69209260T2 (de) | Photokathode für einen Bildverstärker | |
| DE2819698C2 (de) | Verfahren zum Herstellen eines Festkörpermikrobauelementes und Vorrichtung zur Anwendung bei diesem Verfahren | |
| DE3317954C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | ||
| DE68911772T2 (de) | Fotodiode und Fotodiodenmatrix aus II-VI-Halbleitermaterial und Herstellungsverfahren dafür. | |
| DE3300131C2 (de) | Integriertes optisches Bauelement und Verfahren zu seiner Herstellung | |
| DE69602429T2 (de) | Abstimmen des bandabstands einer halbleitenden quantumwell-struktur | |
| DE69126221T2 (de) | Röntgen-Abbildungsvorrichtung aus Festkörperbauelementen | |
| DE69131879T2 (de) | Lichtventil Vorrichtung | |
| DE69126228T2 (de) | Optische Wärmebehandlungsmethode für Halbleiterschicht und Herstellungsverfahren von Halbleiteranordnung mit solcher Halbleiterschicht | |
| DE68923589T2 (de) | Infrarot-Detektor. | |
| DE2654429C2 (de) | Verfahren zum Herstellen eines Photoelements mit einem lichtempfindlichen halbleitenden Substrat aus der Legierung Cd↓x↓Hg↓1↓↓-↓↓x↓Te | |
| DE69210735T2 (de) | Ungekühlter Infrarot-Detektor und Herstellungsverfahren dazu | |
| DE69425999T2 (de) | Photodetektor mit einem mehrschichtigen Filter und Herstellungsverfahren | |
| DE112015000383T5 (de) | Anti Reflexionsschicht für Rückseiten beleuchteten Sensor | |
| DE69517145T2 (de) | Verbesserungen an oder bezüglich Wärmesensoren | |
| DE102014003068B4 (de) | Verfahren zur herstellung eines bildgebers und einer bildgebervorrichtung | |
| DE3644882A1 (de) | Thermische detektormatrix | |
| DE19651590A1 (de) | Belichtungsvorrichtung und Verfahren zur Ausbildung eines Dünnschichttransistors | |
| DE19638373A1 (de) | Halbleitersensor und sein Herstellungsverfahren | |
| DE112019003064T5 (de) | Rückseitig beleuchteter sensor und verfahren zur herstellung eines sensors | |
| EP2847557B1 (de) | Mikrooptisches filter und dessen verwendung in einem spektrometer | |
| DE3200853C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | ||
| DE3038910C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | ||
| DE2160033C3 (de) | Halbleiteranordnung zur Umwandlung von Infrarotstrahlen in elektrische Signale | |
| DE69802234T2 (de) | Aus amorphem Silizium und Legierungen bestehendes Infrarot-Detektor Bauelement |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8120 | Willingness to grant licences paragraph 23 | ||
| 8110 | Request for examination paragraph 44 | ||
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |