DE2951287C2 - Verfahren zur Herstellung von mit einer Vielzahl von feinsten Spitzen versehenen Oberflächen - Google Patents
Verfahren zur Herstellung von mit einer Vielzahl von feinsten Spitzen versehenen OberflächenInfo
- Publication number
- DE2951287C2 DE2951287C2 DE2951287A DE2951287A DE2951287C2 DE 2951287 C2 DE2951287 C2 DE 2951287C2 DE 2951287 A DE2951287 A DE 2951287A DE 2951287 A DE2951287 A DE 2951287A DE 2951287 C2 DE2951287 C2 DE 2951287C2
- Authority
- DE
- Germany
- Prior art keywords
- matrix
- gold layer
- copper
- microholes
- mica
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000000034 method Methods 0.000 title claims description 18
- 239000011159 matrix material Substances 0.000 claims description 16
- 239000010445 mica Substances 0.000 claims description 11
- 229910052618 mica group Inorganic materials 0.000 claims description 11
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 8
- 229910052802 copper Inorganic materials 0.000 claims description 8
- 239000010949 copper Substances 0.000 claims description 8
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 8
- 229910052737 gold Inorganic materials 0.000 claims description 8
- 239000010931 gold Substances 0.000 claims description 8
- 239000011888 foil Substances 0.000 claims description 7
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 7
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 5
- 229910052709 silver Inorganic materials 0.000 claims description 5
- 239000004332 silver Substances 0.000 claims description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims description 3
- 239000003989 dielectric material Substances 0.000 claims description 2
- 238000007740 vapor deposition Methods 0.000 claims description 2
- 239000003792 electrolyte Substances 0.000 claims 2
- 150000002500 ions Chemical class 0.000 claims 2
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 239000011248 coating agent Substances 0.000 claims 1
- 238000000576 coating method Methods 0.000 claims 1
- 238000005530 etching Methods 0.000 claims 1
- 230000001678 irradiating effect Effects 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000004793 Polystyrene Substances 0.000 description 3
- 229920002223 polystyrene Polymers 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 2
- 229910001111 Fine metal Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000008346 aqueous phase Substances 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 238000004626 scanning electron microscopy Methods 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 238000003631 wet chemical etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
- H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
- H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S205/00—Electrolysis: processes, compositions used therein, and methods of preparing the compositions
- Y10S205/918—Use of wave energy or electrical discharge during pretreatment of substrate or post-treatment of coating
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Cold Cathode And The Manufacture (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2951287A DE2951287C2 (de) | 1979-12-20 | 1979-12-20 | Verfahren zur Herstellung von mit einer Vielzahl von feinsten Spitzen versehenen Oberflächen |
| US06/219,350 US4338164A (en) | 1979-12-20 | 1980-12-22 | Method for producing planar surfaces having very fine peaks in the micron range |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2951287A DE2951287C2 (de) | 1979-12-20 | 1979-12-20 | Verfahren zur Herstellung von mit einer Vielzahl von feinsten Spitzen versehenen Oberflächen |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE2951287A1 DE2951287A1 (de) | 1981-07-02 |
| DE2951287C2 true DE2951287C2 (de) | 1987-01-02 |
Family
ID=6088995
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2951287A Expired DE2951287C2 (de) | 1979-12-20 | 1979-12-20 | Verfahren zur Herstellung von mit einer Vielzahl von feinsten Spitzen versehenen Oberflächen |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US4338164A (US20080293856A1-20081127-C00150.png) |
| DE (1) | DE2951287C2 (US20080293856A1-20081127-C00150.png) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4209301C1 (en) * | 1992-03-21 | 1993-08-19 | Gesellschaft Fuer Schwerionenforschung Mbh, 6100 Darmstadt, De | Manufacture of controlled field emitter for flat display screen, TV etc. - using successive etching and deposition stages to form cone shaped emitter peak set in insulating matrix together with electrodes |
Families Citing this family (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3316027C2 (de) * | 1983-05-03 | 1987-01-22 | Dornier System Gmbh, 7990 Friedrichshafen | Photodetektor und Verfahren zu seiner Herstellung |
| DE3337049A1 (de) * | 1983-10-12 | 1985-05-09 | Gesellschaft für Schwerionenforschung mbH, 6100 Darmstadt | Feststoff mit besonderen elektrischen eigenschaften und verfahren zur herstellung eines solchen feststoffes |
| DE3683763D1 (de) * | 1986-03-27 | 1992-03-12 | Ibm Deutschland | Verfahren zur herstellung identisch angeordneter ausrichtmarkierungen auf gegenueberliegenden seiten einer halbleiterscheibe. |
| GB8816689D0 (en) * | 1988-07-13 | 1988-08-17 | Emi Plc Thorn | Method of manufacturing cold cathode field emission device & field emission device manufactured by method |
| US5019003A (en) * | 1989-09-29 | 1991-05-28 | Motorola, Inc. | Field emission device having preformed emitters |
| US5334908A (en) * | 1990-07-18 | 1994-08-02 | International Business Machines Corporation | Structures and processes for fabricating field emission cathode tips using secondary cusp |
| JP2602584B2 (ja) * | 1990-07-18 | 1997-04-23 | インターナシヨナル・ビジネス・マシーンズ・コーポレーシヨン | 電界放出陰極構造を製造する方法 |
| US5141459A (en) * | 1990-07-18 | 1992-08-25 | International Business Machines Corporation | Structures and processes for fabricating field emission cathodes |
| US5192588A (en) * | 1991-03-05 | 1993-03-09 | Harris Corporation | Electroformed method for fabricating round mesa millimeter wave waffleline structure |
| US5430300A (en) * | 1991-07-18 | 1995-07-04 | The Texas A&M University System | Oxidized porous silicon field emission devices |
| US5559389A (en) * | 1993-09-08 | 1996-09-24 | Silicon Video Corporation | Electron-emitting devices having variously constituted electron-emissive elements, including cones or pedestals |
| US7025892B1 (en) | 1993-09-08 | 2006-04-11 | Candescent Technologies Corporation | Method for creating gated filament structures for field emission displays |
| US5462467A (en) * | 1993-09-08 | 1995-10-31 | Silicon Video Corporation | Fabrication of filamentary field-emission device, including self-aligned gate |
| US5564959A (en) | 1993-09-08 | 1996-10-15 | Silicon Video Corporation | Use of charged-particle tracks in fabricating gated electron-emitting devices |
| US5552659A (en) * | 1994-06-29 | 1996-09-03 | Silicon Video Corporation | Structure and fabrication of gated electron-emitting device having electron optics to reduce electron-beam divergence |
| US5608283A (en) * | 1994-06-29 | 1997-03-04 | Candescent Technologies Corporation | Electron-emitting devices utilizing electron-emissive particles which typically contain carbon |
| US5726524A (en) * | 1996-05-31 | 1998-03-10 | Minnesota Mining And Manufacturing Company | Field emission device having nanostructured emitters |
| US6033583A (en) * | 1997-05-05 | 2000-03-07 | The Regents Of The University Of California | Vapor etching of nuclear tracks in dielectric materials |
| US6444256B1 (en) * | 1999-11-17 | 2002-09-03 | The Regents Of The University Of California | Formation of nanometer-size wires using infiltration into latent nuclear tracks |
| WO2002037564A2 (de) * | 2000-10-30 | 2002-05-10 | Gesellschaft für Schwerionenforschung mbH | Folienmaterial mit metallspitzen und verfahren zu seiner herstellung |
| DE10058822A1 (de) * | 2000-11-27 | 2002-06-20 | Danziger Manfred | Verfahren zur Bearbeitung von Trägerfolien durch Bestrahlen mit Schwerionen |
| DE102006050023B4 (de) * | 2006-10-19 | 2008-11-13 | Ist - Ionen Strahl Technologie - Gmbh | Verfahren zur Bearbeitung von Material durch Schwerionenbestrahlung und nachfolgenden Ätzprozess |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US1248442A (en) * | 1916-08-30 | 1917-12-04 | Alonzo L Blalock | Differential. |
| US3922206A (en) * | 1972-12-29 | 1975-11-25 | Atomic Energy Of Australia | Method of photo-etching and photogravure using fission fragment and/or alpha ray etch tracks from toned photographs |
| DE2616662C2 (de) * | 1976-04-15 | 1984-02-02 | Dornier System Gmbh, 7990 Friedrichshafen | Verfahren zur herstellung einer selektiven solarabsorberschicht auf aluminium |
| US4114983A (en) * | 1977-02-18 | 1978-09-19 | Minnesota Mining And Manufacturing Company | Polymeric optical element having antireflecting surface |
| DE2717400C2 (de) * | 1977-04-20 | 1979-06-21 | Gesellschaft Fuer Schwerionenforschung Mbh, 6100 Darmstadt | Ätzverfahren zur Herstellung von Strukturen unterschiedlicher Höhe |
-
1979
- 1979-12-20 DE DE2951287A patent/DE2951287C2/de not_active Expired
-
1980
- 1980-12-22 US US06/219,350 patent/US4338164A/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4209301C1 (en) * | 1992-03-21 | 1993-08-19 | Gesellschaft Fuer Schwerionenforschung Mbh, 6100 Darmstadt, De | Manufacture of controlled field emitter for flat display screen, TV etc. - using successive etching and deposition stages to form cone shaped emitter peak set in insulating matrix together with electrodes |
Also Published As
| Publication number | Publication date |
|---|---|
| DE2951287A1 (de) | 1981-07-02 |
| US4338164A (en) | 1982-07-06 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE2951287C2 (de) | Verfahren zur Herstellung von mit einer Vielzahl von feinsten Spitzen versehenen Oberflächen | |
| DE69801429T2 (de) | Verfahren zur herstellung von karten mit mehreren kontaktspitzen zum testen von halbleiterchips | |
| DE2536363C3 (de) | Dünnschicht-Feldelektronenemissionsquelle and Verfahren zu ihrer Herstellung | |
| DE3872859T2 (de) | Verfahren zur metallisierung eines kieselsaeure-, quartz-, glas- oder saphirsubstrates und so erhaltenes substrat. | |
| DE2741638C3 (de) | Präparattrager mit Elektrodenanordnung fur die Zelluntersuchung, sowie seine Herstellung | |
| DE2413942B2 (de) | Verfahren zur Herstellung von Dünnfilm-Feldemissions-Elektronenquellen | |
| EP3592696B1 (de) | Anordnung und verfahren zum bereitstellen einer vielzahl von nanodrähten | |
| DE4206490C2 (de) | Elektrisch leitfähige Gasverteilerstruktur für eine Brennstoffzelle und Verfahren zu ihrer Herstellung | |
| DE2142146A1 (de) | Halbleiteranordnung und Verfahren zur Herstellung einer derartigen Anordnung | |
| DE19621752A1 (de) | Elektrolytische funktionelle Einrichtung und Verfahren zu ihrer Herstellung | |
| DE2313106C2 (de) | Verfahren zum Herstellen eines mindestens einlagigen elektrischen Verbindungssystems | |
| DE69401243T2 (de) | Feldemissionsvorrichtung mit Kleinradiuskathode und Herstellungsverfahren dieser Vorrichtung | |
| DE19650881C2 (de) | Verfahren zur Herstellung von in z-Richtung elektrisch leitfähiger und in x/y-Richtung isolierender Folien aus Kunststoff | |
| DE69601957T2 (de) | Wellenförmige Stützsäulen einer Feldemissionsvorrichtung mit einer diskontinuierlichen leitfähigen Schicht | |
| EP0523331A1 (de) | Verfahren zum Herstellen eines Filtermaterials | |
| DE1496837A1 (de) | Eloxierverfahren | |
| DE1564066B2 (de) | Verfahren zur Herstellung von elektrischen Verbindungen zu Kontaktschichten an der Oberfläche des Halbleiterkörpers von Halbleiteranordnungen | |
| DE1489037B2 (de) | Verfahren zur herstellung von elektrischen kondensatoren | |
| DE19600782C1 (de) | Verfahren zum Herstellen von nebeneinanderliegenden Gräben oder Löchern in einem elektrisch nichtisolierenden Substrat, insbesondere einem Halbleitersubstrat | |
| EP0973027B1 (de) | Verfahren zum Herstellen einer Elektrode | |
| DE2631776A1 (de) | Elektrischer kondensator | |
| DE1665248C3 (de) | Verfahren zur Herstellung eines Trägers für eine miniaturisierte Schaltung | |
| DE4239538C1 (de) | Verfahren zum elektrolytischen Ätzen | |
| DE3049304C2 (US20080293856A1-20081127-C00150.png) | ||
| DE1078698B (de) | Speicherelektrode fuer Kathodenstrahlroehren und deren Herstellungsverfahren |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8110 | Request for examination paragraph 44 | ||
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |