DE2929484C2 - Monolithische Halbleiteranordnung zur Umwandlung von in unterschiedlichen Wellenlängenbereichen liegenden Lichtsignalen in elektrische Signale - Google Patents
Monolithische Halbleiteranordnung zur Umwandlung von in unterschiedlichen Wellenlängenbereichen liegenden Lichtsignalen in elektrische SignaleInfo
- Publication number
- DE2929484C2 DE2929484C2 DE2929484A DE2929484A DE2929484C2 DE 2929484 C2 DE2929484 C2 DE 2929484C2 DE 2929484 A DE2929484 A DE 2929484A DE 2929484 A DE2929484 A DE 2929484A DE 2929484 C2 DE2929484 C2 DE 2929484C2
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor
- layer
- photodiodes
- band gap
- layers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title claims description 39
- 238000000034 method Methods 0.000 claims description 15
- 238000004943 liquid phase epitaxy Methods 0.000 claims description 7
- 230000003287 optical effect Effects 0.000 description 17
- 239000013307 optical fiber Substances 0.000 description 9
- 239000013078 crystal Substances 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- 239000000758 substrate Substances 0.000 description 5
- 230000005540 biological transmission Effects 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- 229910015363 Au—Sn Inorganic materials 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 206010034972 Photosensitivity reaction Diseases 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 230000036211 photosensitivity Effects 0.000 description 2
- 238000004781 supercooling Methods 0.000 description 2
- 206010034960 Photophobia Diseases 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 208000013469 light sensitivity Diseases 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 238000002798 spectrophotometry method Methods 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/041—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L31/00
- H01L25/043—Stacked arrangements of devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/11—Devices sensitive to infrared, visible or ultraviolet radiation characterised by two potential barriers, e.g. bipolar phototransistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electromagnetism (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8969078A JPS5516479A (en) | 1978-07-21 | 1978-07-21 | Heterojunction light receiving diode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE2929484A1 DE2929484A1 (de) | 1980-03-13 |
| DE2929484C2 true DE2929484C2 (de) | 1987-02-05 |
Family
ID=13977746
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2929484A Expired DE2929484C2 (de) | 1978-07-21 | 1979-07-20 | Monolithische Halbleiteranordnung zur Umwandlung von in unterschiedlichen Wellenlängenbereichen liegenden Lichtsignalen in elektrische Signale |
Country Status (5)
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4289920A (en) * | 1980-06-23 | 1981-09-15 | International Business Machines Corporation | Multiple bandgap solar cell on transparent substrate |
| US4374390A (en) * | 1980-09-10 | 1983-02-15 | Bell Telephone Laboratories, Incorporated | Dual-wavelength light-emitting diode |
| SE8106453L (sv) * | 1981-11-02 | 1983-05-03 | Asea Ab | Fotodiodstruktur med skreddarsydd spektral kenslighet |
| DE3227683C2 (de) * | 1982-02-16 | 1986-09-11 | Siemens AG, 1000 Berlin und 8000 München | Halbleiter-Fotodiode |
| DE3206312A1 (de) * | 1982-02-22 | 1983-09-01 | Standard Elektrik Lorenz Ag, 7000 Stuttgart | Demultiplexer-photodiode |
| DE3227682A1 (de) * | 1982-07-24 | 1984-02-02 | Siemens Ag | Integrierte fotodioden als wellenlaengenselektive demultiplexeinrichtung |
| DE3379441D1 (en) * | 1982-09-23 | 1989-04-20 | Secr Defence Brit | Infrared detectors |
| JPS6140094A (ja) * | 1984-07-31 | 1986-02-26 | 新神戸電機株式会社 | 多層積層板の製造法 |
| JPS6177375A (ja) * | 1984-09-21 | 1986-04-19 | Sharp Corp | カラ−センサ |
| US4745446A (en) * | 1985-02-11 | 1988-05-17 | American Telephone And Telegraph Company, At&T Bell Laboratories | Photodetector and amplifier integration |
| US4739383A (en) * | 1985-03-15 | 1988-04-19 | Exxon Research And Engineering Company | Optical detector and amplifier based on tandem semiconductor devices |
| FR2592217B1 (fr) * | 1985-12-20 | 1988-02-05 | Thomson Csf | Photocathode a amplification interne |
| GB2228824A (en) * | 1989-03-01 | 1990-09-05 | Gen Electric Co Plc | Radiation detectors |
| JP2664510B2 (ja) * | 1989-03-03 | 1997-10-15 | 三菱電機株式会社 | 光検出装置，および光検出方法 |
| US5246506A (en) * | 1991-07-16 | 1993-09-21 | Solarex Corporation | Multijunction photovoltaic device and fabrication method |
| DE10019089C1 (de) * | 2000-04-12 | 2001-11-22 | Epigap Optoelektronik Gmbh | Wellenlängenselektive pn-Übergangs-Photodiode |
| US8816461B2 (en) | 2011-09-13 | 2014-08-26 | The Boeing Company | Dichromatic photodiodes |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3478214A (en) * | 1966-02-16 | 1969-11-11 | North American Rockwell | Photodetector responsive to light intensity in different spectral bands |
| US3833435A (en) * | 1972-09-25 | 1974-09-03 | Bell Telephone Labor Inc | Dielectric optical waveguides and technique for fabricating same |
| JPS5051285A (US08063081-20111122-C00044.png) * | 1973-09-05 | 1975-05-08 | ||
| JPS5158086A (US08063081-20111122-C00044.png) * | 1974-11-18 | 1976-05-21 | Mitsubishi Electric Corp | |
| US3962578A (en) * | 1975-02-28 | 1976-06-08 | Aeronutronic Ford Corporation | Two-color photoelectric detectors having an integral filter |
| DE2629356C2 (de) * | 1976-06-30 | 1983-07-21 | AEG-Telefunken Nachrichtentechnik GmbH, 7150 Backnang | Elektrooptischer Wandler zum Senden oder Empfangen |
| JPS54118190A (en) * | 1978-03-06 | 1979-09-13 | Matsushita Electric Ind Co Ltd | Multi-wavelength band photo detector |
| US4179702A (en) * | 1978-03-09 | 1979-12-18 | Research Triangle Institute | Cascade solar cells |
| US4213138A (en) * | 1978-12-14 | 1980-07-15 | Bell Telephone Laboratories, Incorporated | Demultiplexing photodetector |
-
1978
- 1978-07-21 JP JP8969078A patent/JPS5516479A/ja active Pending
-
1979
- 1979-07-17 GB GB7924846A patent/GB2030359B/en not_active Expired
- 1979-07-19 US US06/059,118 patent/US4297720A/en not_active Expired - Lifetime
- 1979-07-20 DE DE2929484A patent/DE2929484C2/de not_active Expired
- 1979-07-20 FR FR7918856A patent/FR2431771A1/fr active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| US4297720A (en) | 1981-10-27 |
| FR2431771A1 (fr) | 1980-02-15 |
| GB2030359B (en) | 1982-10-27 |
| FR2431771B1 (US08063081-20111122-C00044.png) | 1983-02-11 |
| JPS5516479A (en) | 1980-02-05 |
| DE2929484A1 (de) | 1980-03-13 |
| GB2030359A (en) | 1980-04-02 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OAP | Request for examination filed | ||
| OD | Request for examination | ||
| 8125 | Change of the main classification |
Ipc: H01L 27/14 |
|
| D2 | Grant after examination | ||
| 8363 | Opposition against the patent | ||
| 8365 | Fully valid after opposition proceedings |