DE2927086C2 - Verfahren zum Herstellen von platten- oder bandförmigen Siliziumkristallkörpern mit Säulenstruktur für Solarzellen - Google Patents
Verfahren zum Herstellen von platten- oder bandförmigen Siliziumkristallkörpern mit Säulenstruktur für SolarzellenInfo
- Publication number
- DE2927086C2 DE2927086C2 DE2927086A DE2927086A DE2927086C2 DE 2927086 C2 DE2927086 C2 DE 2927086C2 DE 2927086 A DE2927086 A DE 2927086A DE 2927086 A DE2927086 A DE 2927086A DE 2927086 C2 DE2927086 C2 DE 2927086C2
- Authority
- DE
- Germany
- Prior art keywords
- silicon
- process according
- film
- sintering
- foil
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims description 50
- 229910052710 silicon Inorganic materials 0.000 title claims description 45
- 239000010703 silicon Substances 0.000 title claims description 45
- 238000000034 method Methods 0.000 title claims description 26
- 239000013078 crystal Substances 0.000 title claims description 11
- 238000005245 sintering Methods 0.000 claims description 19
- 239000011888 foil Substances 0.000 claims description 13
- 239000011230 binding agent Substances 0.000 claims description 6
- 239000002019 doping agent Substances 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- 238000009826 distribution Methods 0.000 claims description 5
- 239000011863 silicon-based powder Substances 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 5
- 239000007791 liquid phase Substances 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 4
- -1 polyethylene terephthalate Polymers 0.000 claims description 4
- 229920000139 polyethylene terephthalate Polymers 0.000 claims description 4
- 239000005020 polyethylene terephthalate Substances 0.000 claims description 4
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 3
- 230000001681 protective effect Effects 0.000 claims description 3
- 239000007858 starting material Substances 0.000 claims description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 2
- 239000004372 Polyvinyl alcohol Substances 0.000 claims description 2
- 229910052785 arsenic Inorganic materials 0.000 claims description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 2
- 229910052796 boron Inorganic materials 0.000 claims description 2
- 238000010276 construction Methods 0.000 claims description 2
- 238000002425 crystallisation Methods 0.000 claims description 2
- 230000008025 crystallization Effects 0.000 claims description 2
- 229910052732 germanium Inorganic materials 0.000 claims description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 2
- 230000006911 nucleation Effects 0.000 claims description 2
- 238000010899 nucleation Methods 0.000 claims description 2
- 230000000737 periodic effect Effects 0.000 claims description 2
- 229920002451 polyvinyl alcohol Polymers 0.000 claims description 2
- 229910000927 Ge alloy Inorganic materials 0.000 claims 1
- 239000007864 aqueous solution Substances 0.000 claims 1
- 239000002985 plastic film Substances 0.000 claims 1
- 229920006255 plastic film Polymers 0.000 claims 1
- 239000000463 material Substances 0.000 description 5
- 239000007789 gas Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910000521 B alloy Inorganic materials 0.000 description 2
- RBFDCQDDCJFGIK-UHFFFAOYSA-N arsenic germanium Chemical compound [Ge].[As] RBFDCQDDCJFGIK-UHFFFAOYSA-N 0.000 description 2
- VTYDSHHBXXPBBQ-UHFFFAOYSA-N boron germanium Chemical compound [B].[Ge] VTYDSHHBXXPBBQ-UHFFFAOYSA-N 0.000 description 2
- 238000005266 casting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910000967 As alloy Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000002109 crystal growth method Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B1/00—Single-crystal growth directly from the solid state
- C30B1/02—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
- C30B29/605—Products containing multiple oriented crystallites, e.g. columnar crystallites
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Photovoltaic Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Silicon Compounds (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2927086A DE2927086C2 (de) | 1979-07-04 | 1979-07-04 | Verfahren zum Herstellen von platten- oder bandförmigen Siliziumkristallkörpern mit Säulenstruktur für Solarzellen |
| US06/160,214 US4330358A (en) | 1979-07-04 | 1980-06-17 | Method of producing plate- or tape-shaped silicon crystal bodies having crystalline pillar-like structures therein, equivalent to _crystalline columnar structures, for large surface solar cells |
| JP9161980A JPS5615082A (en) | 1979-07-04 | 1980-07-04 | Method of manufacturing planar or banddlike silicon crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2927086A DE2927086C2 (de) | 1979-07-04 | 1979-07-04 | Verfahren zum Herstellen von platten- oder bandförmigen Siliziumkristallkörpern mit Säulenstruktur für Solarzellen |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE2927086A1 DE2927086A1 (de) | 1981-01-22 |
| DE2927086C2 true DE2927086C2 (de) | 1987-02-05 |
Family
ID=6074927
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2927086A Expired DE2927086C2 (de) | 1979-07-04 | 1979-07-04 | Verfahren zum Herstellen von platten- oder bandförmigen Siliziumkristallkörpern mit Säulenstruktur für Solarzellen |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US4330358A (US08124630-20120228-C00102.png) |
| JP (1) | JPS5615082A (US08124630-20120228-C00102.png) |
| DE (1) | DE2927086C2 (US08124630-20120228-C00102.png) |
Families Citing this family (38)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3019635A1 (de) * | 1980-05-22 | 1981-11-26 | SIEMENS AG AAAAA, 1000 Berlin und 8000 München | Verbesserung eines verfahrens zur herstellung von platten-, band- oder folienfoermigen siliziumkristallkoerpern fuer solarzellen |
| DE3035563C2 (de) * | 1980-09-20 | 1984-10-11 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Verfahren zum Herstellen einer polykristallinen Silizium-Solarzelle |
| DE3100776A1 (de) * | 1981-01-13 | 1982-08-12 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zur herstellung von folien aus gesintertem polykristallinen silizium |
| DE3128979C2 (de) * | 1981-07-22 | 1986-10-23 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum Herstellen von für Solarzellen verwendbarem Silizium |
| DE3338335A1 (de) * | 1983-10-21 | 1985-05-09 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum herstellen von grossflaechigen siliziumkristallkoerpern fuer solarzellen |
| US4584241A (en) * | 1984-04-06 | 1986-04-22 | At&T Technologies | Stabilization of PVC bodies |
| DE3419137A1 (de) * | 1984-05-23 | 1985-11-28 | Bayer Ag, 5090 Leverkusen | Verfahren und vorrichtung zur herstellung von halbleiterfolien |
| US4599244A (en) * | 1984-07-11 | 1986-07-08 | Siemens Aktiengesellschaft | Method large-area silicon bodies |
| US4643797A (en) * | 1984-08-28 | 1987-02-17 | Siemens Aktiengesellschaft | Method for the manufacture of large area silicon crystal bodies for solar cells |
| DE3536743C2 (de) * | 1985-10-15 | 1994-11-10 | Siemens Ag | Verfahren zum Herstellung von großflächigen Siliziumkristallkörpern für Solarzellen |
| IT1224175B (it) * | 1987-05-25 | 1990-09-26 | Ugo Nazzarro | Diffusore automatico di cera depilatoria su strisce depilanti |
| CA2024662A1 (en) * | 1989-09-08 | 1991-03-09 | Robert Oswald | Monolithic series and parallel connected photovoltaic module |
| US5559057A (en) * | 1994-03-24 | 1996-09-24 | Starfire Electgronic Development & Marketing Ltd. | Method for depositing and patterning thin films formed by fusing nanocrystalline precursors |
| US5576248A (en) * | 1994-03-24 | 1996-11-19 | Starfire Electronic Development & Marketing, Ltd. | Group IV semiconductor thin films formed at low temperature using nanocrystal precursors |
| US6800137B2 (en) | 1995-06-16 | 2004-10-05 | Phoenix Scientific Corporation | Binary and ternary crystal purification and growth method and apparatus |
| US5993540A (en) * | 1995-06-16 | 1999-11-30 | Optoscint, Inc. | Continuous crystal plate growth process and apparatus |
| US6599631B2 (en) | 2001-01-26 | 2003-07-29 | Nanogram Corporation | Polymer-inorganic particle composites |
| US20090075083A1 (en) | 1997-07-21 | 2009-03-19 | Nanogram Corporation | Nanoparticle production and corresponding structures |
| US8568684B2 (en) * | 2000-10-17 | 2013-10-29 | Nanogram Corporation | Methods for synthesizing submicron doped silicon particles |
| US7226966B2 (en) | 2001-08-03 | 2007-06-05 | Nanogram Corporation | Structures incorporating polymer-inorganic particle blends |
| US6402840B1 (en) | 1999-08-10 | 2002-06-11 | Optoscint, Inc. | Crystal growth employing embedded purification chamber |
| JP3620795B2 (ja) | 2000-01-06 | 2005-02-16 | ローズマウント インコーポレイテッド | 超小型電気機械システム用電気的相互接続部の結晶粒成長 |
| US7108746B2 (en) | 2001-05-18 | 2006-09-19 | Integrated Materials, Inc. | Silicon fixture with roughened surface supporting wafers in chemical vapor deposition |
| AT411409B (de) * | 2001-08-17 | 2003-12-29 | Muellner Walter | Verfahren zum herstellen einer solarzelle |
| US6740158B2 (en) * | 2002-05-09 | 2004-05-25 | Rwe Schott Solar Inc. | Process for coating silicon shot with dopant for addition of dopant in crystal growth |
| US7879696B2 (en) * | 2003-07-08 | 2011-02-01 | Kovio, Inc. | Compositions and methods for forming a semiconducting and/or silicon-containing film, and structures formed therefrom |
| DE102004060737B4 (de) * | 2004-12-15 | 2007-03-08 | Degussa Ag | Verfahren zur Herstellung von halbleitenden oder photovoltaisch aktiven Filmen |
| WO2008060704A2 (en) * | 2006-06-02 | 2008-05-22 | Innovalight, Inc. | Photoactive materials containing group iv nanostructures and optoelectronic devices made therefrom |
| US20080063855A1 (en) * | 2006-09-07 | 2008-03-13 | Maxim Kelman | Semiconductor thin films formed from group iv nanoparticles |
| EP2089897A2 (en) * | 2006-12-07 | 2009-08-19 | Innovalight, Inc. | Methods for creating a densified group iv semiconductor nanoparticle thin film |
| US7718707B2 (en) * | 2006-12-21 | 2010-05-18 | Innovalight, Inc. | Method for preparing nanoparticle thin films |
| CN103333526A (zh) | 2007-01-03 | 2013-10-02 | 内诺格雷姆公司 | 基于硅/锗的纳米颗粒油墨、掺杂型颗粒、用于半导体应用的印刷和方法 |
| WO2008124400A1 (en) | 2007-04-04 | 2008-10-16 | Innovalight, Inc. | Methods for optimizing thin film formation with reactive gases |
| DE102007029576A1 (de) | 2007-06-26 | 2009-01-08 | Evonik Degussa Gmbh | Verfahren zur Herstellung von folienartigen Halbleiterwerkstoffen und/oder elektronischen Elementen durch Urformen und/oder Beschichtung |
| US7851336B2 (en) * | 2008-03-13 | 2010-12-14 | Innovalight, Inc. | Method of forming a passivated densified nanoparticle thin film on a substrate |
| US8247312B2 (en) * | 2008-04-24 | 2012-08-21 | Innovalight, Inc. | Methods for printing an ink on a textured wafer surface |
| US8895962B2 (en) | 2010-06-29 | 2014-11-25 | Nanogram Corporation | Silicon/germanium nanoparticle inks, laser pyrolysis reactors for the synthesis of nanoparticles and associated methods |
| CN104919012A (zh) | 2013-05-24 | 2015-09-16 | 纳克公司 | 具有基于硅/锗的纳米颗料并且具有高粘度醇类溶剂的可印刷墨水 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2904613A (en) * | 1957-08-26 | 1959-09-15 | Hoffman Electronics Corp | Large area solar energy converter and method for making the same |
| US3900943A (en) * | 1973-06-07 | 1975-08-26 | Dow Corning | Silicon semiconductor device array and method of making same |
| DE2508803C3 (de) * | 1975-02-28 | 1982-07-08 | Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen | Verfahren zur Herstellung plattenförmiger Siliciumkristalle mit Kolumnarstruktur |
| US4021323A (en) * | 1975-07-28 | 1977-05-03 | Texas Instruments Incorporated | Solar energy conversion |
| US4027053A (en) * | 1975-12-19 | 1977-05-31 | Motorola, Inc. | Method of producing polycrystalline silicon ribbon |
| US4173494A (en) * | 1977-02-14 | 1979-11-06 | Jack S. Kilby | Glass support light energy converter |
| JPS5461888A (en) * | 1977-10-26 | 1979-05-18 | Sharp Corp | Production of semiconductor thin film |
| US4238436A (en) * | 1979-05-10 | 1980-12-09 | General Instrument Corporation | Method of obtaining polycrystalline silicon |
-
1979
- 1979-07-04 DE DE2927086A patent/DE2927086C2/de not_active Expired
-
1980
- 1980-06-17 US US06/160,214 patent/US4330358A/en not_active Expired - Lifetime
- 1980-07-04 JP JP9161980A patent/JPS5615082A/ja active Pending
Non-Patent Citations (1)
| Title |
|---|
| NICHTS-ERMITTELT |
Also Published As
| Publication number | Publication date |
|---|---|
| DE2927086A1 (de) | 1981-01-22 |
| US4330358A (en) | 1982-05-18 |
| JPS5615082A (en) | 1981-02-13 |
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Legal Events
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| OC | Search report available | ||
| 8110 | Request for examination paragraph 44 | ||
| AG | Has addition no. |
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| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition | ||
| 8320 | Willingness to grant licences declared (paragraph 23) | ||
| 8339 | Ceased/non-payment of the annual fee |