DE2924920C2 - - Google Patents
Info
- Publication number
- DE2924920C2 DE2924920C2 DE2924920A DE2924920A DE2924920C2 DE 2924920 C2 DE2924920 C2 DE 2924920C2 DE 2924920 A DE2924920 A DE 2924920A DE 2924920 A DE2924920 A DE 2924920A DE 2924920 C2 DE2924920 C2 DE 2924920C2
- Authority
- DE
- Germany
- Prior art keywords
- heat
- workpiece surface
- light beam
- controlled
- laser beam
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000000034 method Methods 0.000 claims description 21
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 239000000919 ceramic Substances 0.000 claims description 4
- 239000004020 conductor Substances 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims description 4
- 239000011521 glass Substances 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 4
- 230000005855 radiation Effects 0.000 claims description 4
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 claims 1
- 238000001465 metallisation Methods 0.000 claims 1
- 238000002425 crystallisation Methods 0.000 description 9
- 230000008025 crystallization Effects 0.000 description 8
- 239000013078 crystal Substances 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 244000052616 bacterial pathogen Species 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 238000010792 warming Methods 0.000 description 2
- 241000482967 Diloba caeruleocephala Species 0.000 description 1
- YNPNZTXNASCQKK-UHFFFAOYSA-N Phenanthrene Natural products C1=CC=C2C3=CC=CC=C3C=CC2=C1 YNPNZTXNASCQKK-UHFFFAOYSA-N 0.000 description 1
- DGEZNRSVGBDHLK-UHFFFAOYSA-N [1,10]phenanthroline Chemical compound C1=CN=C2C3=NC=CC=C3C=CC2=C1 DGEZNRSVGBDHLK-UHFFFAOYSA-N 0.000 description 1
- 210000000941 bile Anatomy 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 239000012297 crystallization seed Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004870 electrical engineering Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 230000009969 flowable effect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000001960 triggered effect Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B1/00—Single-crystal growth directly from the solid state
- C30B1/02—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing
- C30B1/06—Recrystallisation under a temperature gradient
- C30B1/08—Zone recrystallisation
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B1/00—Single-crystal growth directly from the solid state
- C30B1/02—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing
- C30B1/023—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing from solids with amorphous structure
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/903—Dendrite or web or cage technique
- Y10S117/904—Laser beam
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/092—Laser beam processing-diodes or transistor
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/093—Laser beam treatment in general
Landscapes
- Chemical & Material Sciences (AREA)
- Metallurgy (AREA)
- Thermal Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Organic Chemistry (AREA)
- Recrystallisation Techniques (AREA)
- Photovoltaic Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Vapour Deposition (AREA)
- Manufacturing Of Printed Wiring (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19792924920 DE2924920A1 (de) | 1979-06-20 | 1979-06-20 | Verfahren zur herstellung grobkristalliner oder einkristalliner metalloder legierungsschichten |
| EP80102974A EP0021087B1 (de) | 1979-06-20 | 1980-05-28 | Verfahren zur Herstellung grobkristalliner oder einkristalliner Metall- oder Legierungsschichten sowie Anwendung des Verfahrens zur Herstellung von Halbleiterschaltungen und Kontaktelektroden |
| US06/157,826 US4372989A (en) | 1979-06-20 | 1980-06-09 | Process for producing coarse-grain crystalline/mono-crystalline metal and alloy films |
| JP8340780A JPS569299A (en) | 1979-06-20 | 1980-06-19 | Manufacture of metal or alloy layer of crude crystal or single crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19792924920 DE2924920A1 (de) | 1979-06-20 | 1979-06-20 | Verfahren zur herstellung grobkristalliner oder einkristalliner metalloder legierungsschichten |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE2924920A1 DE2924920A1 (de) | 1981-01-22 |
| DE2924920C2 true DE2924920C2 (enrdf_load_stackoverflow) | 1987-07-16 |
Family
ID=6073696
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19792924920 Granted DE2924920A1 (de) | 1979-06-20 | 1979-06-20 | Verfahren zur herstellung grobkristalliner oder einkristalliner metalloder legierungsschichten |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US4372989A (enrdf_load_stackoverflow) |
| EP (1) | EP0021087B1 (enrdf_load_stackoverflow) |
| JP (1) | JPS569299A (enrdf_load_stackoverflow) |
| DE (1) | DE2924920A1 (enrdf_load_stackoverflow) |
Families Citing this family (43)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4810663A (en) * | 1981-12-07 | 1989-03-07 | Massachusetts Institute Of Technology | Method of forming conductive path by low power laser pulse |
| US4585490A (en) * | 1981-12-07 | 1986-04-29 | Massachusetts Institute Of Technology | Method of making a conductive path in multi-layer metal structures by low power laser beam |
| FR2532783A1 (fr) * | 1982-09-07 | 1984-03-09 | Vu Duy Phach | Machine de traitement thermique pour semiconducteurs |
| US4466179A (en) * | 1982-10-19 | 1984-08-21 | Harris Corporation | Method for providing polysilicon thin films of improved uniformity |
| JPS59125640A (ja) * | 1982-12-28 | 1984-07-20 | Fujitsu Ltd | 半導体装置の製造方法 |
| DE3324551A1 (de) * | 1983-07-07 | 1985-01-17 | Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen | Verfahren zur kennzeichnung von halbleiteroberflaechen durch laserstrahlung |
| DE3437072A1 (de) * | 1984-10-09 | 1986-04-10 | Dieter Prof. Dr. Linz Bäuerle | Verfahren zur herstellung von leiterbahnen und/oder elektroden auf dielektrischem material |
| JPS62281349A (ja) * | 1986-05-29 | 1987-12-07 | Seiko Instr & Electronics Ltd | 金属パタ−ン膜の形成方法及びその装置 |
| US5064681A (en) * | 1986-08-21 | 1991-11-12 | International Business Machines Corporation | Selective deposition process for physical vapor deposition |
| US4847138A (en) * | 1987-10-07 | 1989-07-11 | Corning Glass Works | Thermal writing on glass and glass-ceramic substrates |
| US4843030A (en) * | 1987-11-30 | 1989-06-27 | Eaton Corporation | Semiconductor processing by a combination of photolytic, pyrolytic and catalytic processes |
| US4925830A (en) * | 1988-04-14 | 1990-05-15 | Tracer Technologies, Inc. | Laser based method for forming a superconducting oxide layer on various substrates |
| US5145741A (en) * | 1989-06-05 | 1992-09-08 | Quick Nathaniel R | Converting ceramic materials to electrical conductors and semiconductors |
| JP2973492B2 (ja) * | 1990-08-22 | 1999-11-08 | ソニー株式会社 | 半導体薄膜の結晶化方法 |
| US5932289A (en) * | 1991-05-28 | 1999-08-03 | Trikon Technologies Limited | Method for filling substrate recesses using pressure and heat treatment |
| US5455079A (en) * | 1991-07-26 | 1995-10-03 | The United States Of America As Represented By The Secretary Of The Interior | Surface hardening of titanium alloys with melting depth controlled by heat sink |
| US5459098A (en) * | 1992-10-19 | 1995-10-17 | Marietta Energy Systems, Inc. | Maskless laser writing of microscopic metallic interconnects |
| US5427825A (en) * | 1993-02-09 | 1995-06-27 | Rutgers, The State University | Localized surface glazing of ceramic articles |
| US5456763A (en) * | 1994-03-29 | 1995-10-10 | The Regents Of The University Of California | Solar cells utilizing pulsed-energy crystallized microcrystalline/polycrystalline silicon |
| US5627081A (en) * | 1994-11-29 | 1997-05-06 | Midwest Research Institute | Method for processing silicon solar cells |
| US6271576B1 (en) * | 1996-12-05 | 2001-08-07 | Nathaniel R. Quick | Laser synthesized ceramic sensors and method for making |
| US6670693B1 (en) | 1996-12-05 | 2003-12-30 | Nathaniel R. Quick | Laser synthesized wide-bandgap semiconductor electronic devices and circuits |
| WO2001085368A1 (en) | 2000-05-09 | 2001-11-15 | Usf Filtration And Separations Group, Inc. | Apparatus and method for drawing continuous fiber |
| US6689234B2 (en) | 2000-11-09 | 2004-02-10 | Bechtel Bwxt Idaho, Llc | Method of producing metallic materials |
| US6939748B1 (en) | 2003-10-13 | 2005-09-06 | Nathaniel R. Quick | Nano-size semiconductor component and method of making |
| US7341765B2 (en) * | 2004-01-27 | 2008-03-11 | Battelle Energy Alliance, Llc | Metallic coatings on silicon substrates, and methods of forming metallic coatings on silicon substrates |
| US8617965B1 (en) | 2004-02-19 | 2013-12-31 | Partial Assignment to University of Central Florida | Apparatus and method of forming high crystalline quality layer |
| US7618880B1 (en) * | 2004-02-19 | 2009-11-17 | Quick Nathaniel R | Apparatus and method for transformation of substrate |
| WO2005095263A2 (en) * | 2004-03-24 | 2005-10-13 | H. C. Starck Inc. | Methods of forming alpha and beta tantalum films with controlled and new microstructures |
| US7268063B1 (en) * | 2004-06-01 | 2007-09-11 | University Of Central Florida | Process for fabricating semiconductor component |
| US7419887B1 (en) | 2004-07-26 | 2008-09-02 | Quick Nathaniel R | Laser assisted nano deposition |
| US7951632B1 (en) * | 2005-01-26 | 2011-05-31 | University Of Central Florida | Optical device and method of making |
| US7732241B2 (en) * | 2005-11-30 | 2010-06-08 | Semiconductor Energy Labortory Co., Ltd. | Microstructure and manufacturing method thereof and microelectromechanical system |
| US7811914B1 (en) * | 2006-04-20 | 2010-10-12 | Quick Nathaniel R | Apparatus and method for increasing thermal conductivity of a substrate |
| US8617669B1 (en) | 2006-04-20 | 2013-12-31 | Partial Assignment to University of Central Florida | Laser formation of graphene |
| US8067303B1 (en) | 2006-09-12 | 2011-11-29 | Partial Assignment University of Central Florida | Solid state energy conversion device |
| US8114693B1 (en) | 2007-09-18 | 2012-02-14 | Partial Assignment University of Central Florida | Method of fabricating solid state gas dissociating device by laser doping |
| US8319149B2 (en) * | 2008-04-16 | 2012-11-27 | Applied Materials, Inc. | Radiant anneal throughput optimization and thermal history minimization by interlacing |
| KR20110108342A (ko) * | 2008-12-02 | 2011-10-05 | 유니버시티 오브 센트럴 플로리다 | 에너지 변환 장치 |
| US9059079B1 (en) | 2012-09-26 | 2015-06-16 | Ut-Battelle, Llc | Processing of insulators and semiconductors |
| DE102012111698A1 (de) * | 2012-12-03 | 2014-03-20 | Solarworld Innovations Gmbh | Verfahren und Vorrichtung zum Bearbeiten mindestens eines kristallinen Silizium-Wafers oder eines Solarzellen-Wafers |
| US9620667B1 (en) | 2013-12-10 | 2017-04-11 | AppliCote Associates LLC | Thermal doping of materials |
| US9601641B1 (en) | 2013-12-10 | 2017-03-21 | AppliCote Associates, LLC | Ultra-high pressure doping of materials |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3585088A (en) * | 1968-10-18 | 1971-06-15 | Ibm | Methods of producing single crystals on supporting substrates |
| US3873341A (en) * | 1972-12-26 | 1975-03-25 | Material Sciences Corp | Rapid conversion of an iron oxide film |
| US4046618A (en) * | 1972-12-29 | 1977-09-06 | International Business Machines Corporation | Method for preparing large single crystal thin films |
| GB1486265A (en) * | 1973-10-17 | 1977-09-21 | Hitachi Ltd | Method for producing an amorphous state of a solid material |
| US4059461A (en) * | 1975-12-10 | 1977-11-22 | Massachusetts Institute Of Technology | Method for improving the crystallinity of semiconductor films by laser beam scanning and the products thereof |
| DE2727659B2 (de) * | 1977-06-20 | 1980-01-10 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Verfahren zur Herstellung grobkristalliner oder einkristalliner Metallschichten |
-
1979
- 1979-06-20 DE DE19792924920 patent/DE2924920A1/de active Granted
-
1980
- 1980-05-28 EP EP80102974A patent/EP0021087B1/de not_active Expired
- 1980-06-09 US US06/157,826 patent/US4372989A/en not_active Expired - Lifetime
- 1980-06-19 JP JP8340780A patent/JPS569299A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| EP0021087B1 (de) | 1983-10-05 |
| JPS6110430B2 (enrdf_load_stackoverflow) | 1986-03-29 |
| US4372989A (en) | 1983-02-08 |
| JPS569299A (en) | 1981-01-30 |
| EP0021087A1 (de) | 1981-01-07 |
| DE2924920A1 (de) | 1981-01-22 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OAM | Search report available | ||
| OC | Search report available | ||
| 8110 | Request for examination paragraph 44 | ||
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |