DE2917654A1 - Anordnung und verfahren zum selektiven, elektrochemischen aetzen - Google Patents

Anordnung und verfahren zum selektiven, elektrochemischen aetzen

Info

Publication number
DE2917654A1
DE2917654A1 DE19792917654 DE2917654A DE2917654A1 DE 2917654 A1 DE2917654 A1 DE 2917654A1 DE 19792917654 DE19792917654 DE 19792917654 DE 2917654 A DE2917654 A DE 2917654A DE 2917654 A1 DE2917654 A1 DE 2917654A1
Authority
DE
Germany
Prior art keywords
etched
etching
arrangement according
workpiece
conductor tracks
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE19792917654
Other languages
German (de)
English (en)
Inventor
Joachim Buehne
Rolf Schaefer
Axel Dipl Phys Dr Stoffel
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
IBM Deutschland GmbH
Original Assignee
IBM Deutschland GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by IBM Deutschland GmbH filed Critical IBM Deutschland GmbH
Priority to DE19792917654 priority Critical patent/DE2917654A1/de
Priority to IT20724/80A priority patent/IT1150984B/it
Priority to CA000348728A priority patent/CA1148111A/en
Priority to JP4817280A priority patent/JPS55148428A/ja
Priority to DE8080102081T priority patent/DE3068851D1/de
Priority to EP80102081A priority patent/EP0018556B1/de
Priority to US06/143,661 priority patent/US4303482A/en
Publication of DE2917654A1 publication Critical patent/DE2917654A1/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/61—Electrolytic etching
    • H10P50/613—Electrolytic etching of Group IV materials
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F3/00—Electrolytic etching or polishing
    • C25F3/02—Etching
    • C25F3/14—Etching locally
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/61—Electrolytic etching
    • H10P50/617—Electrolytic etching of Group III-V materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S204/00—Chemistry: electrical and wave energy
    • Y10S204/09—Wave forms

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Weting (AREA)
DE19792917654 1979-02-05 1979-05-02 Anordnung und verfahren zum selektiven, elektrochemischen aetzen Withdrawn DE2917654A1 (de)

Priority Applications (7)

Application Number Priority Date Filing Date Title
DE19792917654 DE2917654A1 (de) 1979-05-02 1979-05-02 Anordnung und verfahren zum selektiven, elektrochemischen aetzen
IT20724/80A IT1150984B (it) 1979-05-02 1980-03-18 Apparecchiatura e processo di attacco elettrochimico selettivo
CA000348728A CA1148111A (en) 1979-05-02 1980-03-28 Arrangement and method for selective electrochemical etching
JP4817280A JPS55148428A (en) 1979-05-02 1980-04-14 Method of selectively electrochemically etching article to be treated
DE8080102081T DE3068851D1 (en) 1979-05-02 1980-04-18 Apparatus and process for selective electrochemical etching
EP80102081A EP0018556B1 (de) 1979-05-02 1980-04-18 Anordnung und Verfahren zum selektiven, elektrochemischen Ätzen
US06/143,661 US4303482A (en) 1979-02-05 1980-04-25 Apparatus and method for selective electrochemical etching

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19792917654 DE2917654A1 (de) 1979-05-02 1979-05-02 Anordnung und verfahren zum selektiven, elektrochemischen aetzen

Publications (1)

Publication Number Publication Date
DE2917654A1 true DE2917654A1 (de) 1980-11-13

Family

ID=6069739

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19792917654 Withdrawn DE2917654A1 (de) 1979-02-05 1979-05-02 Anordnung und verfahren zum selektiven, elektrochemischen aetzen

Country Status (5)

Country Link
US (1) US4303482A (https=)
JP (1) JPS55148428A (https=)
CA (1) CA1148111A (https=)
DE (1) DE2917654A1 (https=)
IT (1) IT1150984B (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5403752A (en) * 1993-05-19 1995-04-04 Siemens Aktiengesellschaft Method for manufacturing a pyrodetector apparatus

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4369099A (en) * 1981-01-08 1983-01-18 Bell Telephone Laboratories, Incorporated Photoelectrochemical etching of semiconductors
US4689125A (en) * 1982-09-10 1987-08-25 American Telephone & Telegraph Co., At&T Bell Labs Fabrication of cleaved semiconductor lasers
GB8429701D0 (en) * 1984-11-23 1985-01-03 British Telecomm Integrated optoelectronic devices
US5277769A (en) * 1991-11-27 1994-01-11 The United States Of America As Represented By The Department Of Energy Electrochemical thinning of silicon
US5217586A (en) * 1992-01-09 1993-06-08 International Business Machines Corporation Electrochemical tool for uniform metal removal during electropolishing
US5318676A (en) * 1992-06-22 1994-06-07 The Regents Of The University Of California Photolithographic fabrication of luminescent images on porous silicon structures
US5338416A (en) * 1993-02-05 1994-08-16 Massachusetts Institute Of Technology Electrochemical etching process
US5374338A (en) * 1993-10-27 1994-12-20 International Business Machines Corporation Selective electroetch of copper and other metals
US5405518A (en) * 1994-04-26 1995-04-11 Industrial Technology Research Institute Workpiece holder apparatus
US5464509A (en) * 1994-05-20 1995-11-07 Massachusetts Institute Of Technology P-N junction etch-stop technique for electrochemical etching of semiconductors
KR0169344B1 (ko) * 1994-12-16 1999-02-01 심상철 바이어스 방법에 의해 형성된 두께가 매우 얇고 균일한 단결정 실리콘 박막을 갖는 에스-오-아이 웨이퍼의 제조방법 및 그 구조
DE19653097A1 (de) * 1996-12-20 1998-07-02 Forschungszentrum Juelich Gmbh Schicht mit porösem Schichtbereich, eine solche Schicht enthaltendes Interferenzfilter sowie Verfahren zu ihrer Herstellung
US5935404A (en) * 1997-01-22 1999-08-10 International Business Machines Corporation Method of performing processes on features with electricity
US5965005A (en) * 1997-09-22 1999-10-12 National Science Council Mask for porous silicon formation
WO2005022135A1 (en) * 2003-08-27 2005-03-10 Prussin Simon A In situ determination of resistivity, mobility and dopant concentration profiles
US7150820B2 (en) * 2003-09-22 2006-12-19 Semitool, Inc. Thiourea- and cyanide-free bath and process for electrolytic etching of gold
US20060207890A1 (en) * 2005-03-15 2006-09-21 Norbert Staud Electrochemical etching
US7569490B2 (en) * 2005-03-15 2009-08-04 Wd Media, Inc. Electrochemical etching
US8157978B2 (en) * 2009-01-29 2012-04-17 International Business Machines Corporation Etching system and method for forming multiple porous semiconductor regions with different optical and structural properties on a single semiconductor wafer
US11289386B2 (en) 2016-04-26 2022-03-29 Active Layer Parametrics, Inc. Methods and apparatus for test pattern forming and film property measurement
WO2017189582A1 (en) 2016-04-26 2017-11-02 Active Layer Parametrics, Inc. Methods and systems for material property profiling of thin films
US12313669B2 (en) 2023-04-21 2025-05-27 Active Layer Parametrics, Inc. Methods and tools for electrical property depth profiling using electro-etching

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2656496A (en) * 1951-07-31 1953-10-20 Bell Telephone Labor Inc Semiconductor translating device
NL122951C (nl) * 1961-08-28 1968-01-15 Philips Nv Lagen-transistor en werkwijze voor het vervaardigen daarvan
US3265599A (en) * 1963-06-25 1966-08-09 Litton Systems Inc Formation of grain boundary photoorienter by electrolytic etching
US3325384A (en) * 1963-11-13 1967-06-13 Buckbee Mears Co Shaped cathode for electrolytic etching
NL153947B (nl) * 1967-02-25 1977-07-15 Philips Nv Werkwijze voor het vervaardigen van halfgeleiderinrichtingen, waarbij een selectief elektrolytisch etsproces wordt toegepast en halfgeleiderinrichting verkregen met toepassing van de werkwijze.
US4002511A (en) * 1975-04-16 1977-01-11 Ibm Corporation Method for forming masks comprising silicon nitride and novel mask structures produced thereby
US4069121A (en) * 1975-06-27 1978-01-17 Thomson-Csf Method for producing microscopic passages in a semiconductor body for electron-multiplication applications
US4180439A (en) * 1976-03-15 1979-12-25 International Business Machines Corporation Anodic etching method for the detection of electrically active defects in silicon
US4197142A (en) * 1979-03-07 1980-04-08 Canadian Patents & Development Ltd. Photochemical device for conversion of visible light to electricity

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5403752A (en) * 1993-05-19 1995-04-04 Siemens Aktiengesellschaft Method for manufacturing a pyrodetector apparatus

Also Published As

Publication number Publication date
IT1150984B (it) 1986-12-17
JPS631745B2 (https=) 1988-01-13
JPS55148428A (en) 1980-11-19
CA1148111A (en) 1983-06-14
IT8020724A0 (it) 1980-03-18
US4303482A (en) 1981-12-01

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Legal Events

Date Code Title Description
8139 Disposal/non-payment of the annual fee