JPS55148428A - Method of selectively electrochemically etching article to be treated - Google Patents

Method of selectively electrochemically etching article to be treated

Info

Publication number
JPS55148428A
JPS55148428A JP4817280A JP4817280A JPS55148428A JP S55148428 A JPS55148428 A JP S55148428A JP 4817280 A JP4817280 A JP 4817280A JP 4817280 A JP4817280 A JP 4817280A JP S55148428 A JPS55148428 A JP S55148428A
Authority
JP
Japan
Prior art keywords
treated
electrochemically etching
selectively electrochemically
article
etching article
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4817280A
Other languages
English (en)
Japanese (ja)
Other versions
JPS631745B2 (https=
Inventor
Biina Jiyoakimu
Shieefuaa Rorufu
Sutotsufueru Akuseru
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of JPS55148428A publication Critical patent/JPS55148428A/ja
Publication of JPS631745B2 publication Critical patent/JPS631745B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/61—Electrolytic etching
    • H10P50/613—Electrolytic etching of Group IV materials
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F3/00—Electrolytic etching or polishing
    • C25F3/02—Etching
    • C25F3/14—Etching locally
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/61—Electrolytic etching
    • H10P50/617—Electrolytic etching of Group III-V materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S204/00—Chemistry: electrical and wave energy
    • Y10S204/09—Wave forms

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Weting (AREA)
JP4817280A 1979-05-02 1980-04-14 Method of selectively electrochemically etching article to be treated Granted JPS55148428A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19792917654 DE2917654A1 (de) 1979-05-02 1979-05-02 Anordnung und verfahren zum selektiven, elektrochemischen aetzen

Publications (2)

Publication Number Publication Date
JPS55148428A true JPS55148428A (en) 1980-11-19
JPS631745B2 JPS631745B2 (https=) 1988-01-13

Family

ID=6069739

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4817280A Granted JPS55148428A (en) 1979-05-02 1980-04-14 Method of selectively electrochemically etching article to be treated

Country Status (5)

Country Link
US (1) US4303482A (https=)
JP (1) JPS55148428A (https=)
CA (1) CA1148111A (https=)
DE (1) DE2917654A1 (https=)
IT (1) IT1150984B (https=)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4369099A (en) * 1981-01-08 1983-01-18 Bell Telephone Laboratories, Incorporated Photoelectrochemical etching of semiconductors
US4689125A (en) * 1982-09-10 1987-08-25 American Telephone & Telegraph Co., At&T Bell Labs Fabrication of cleaved semiconductor lasers
GB8429701D0 (en) * 1984-11-23 1985-01-03 British Telecomm Integrated optoelectronic devices
US5277769A (en) * 1991-11-27 1994-01-11 The United States Of America As Represented By The Department Of Energy Electrochemical thinning of silicon
US5217586A (en) * 1992-01-09 1993-06-08 International Business Machines Corporation Electrochemical tool for uniform metal removal during electropolishing
US5318676A (en) * 1992-06-22 1994-06-07 The Regents Of The University Of California Photolithographic fabrication of luminescent images on porous silicon structures
US5338416A (en) * 1993-02-05 1994-08-16 Massachusetts Institute Of Technology Electrochemical etching process
EP0630058A3 (de) * 1993-05-19 1995-03-15 Siemens Ag Verfahren zur Herstellung einer Pyrodetektoranordnung durch elektronisches Ätzen eines Silizium Substrats.
US5374338A (en) * 1993-10-27 1994-12-20 International Business Machines Corporation Selective electroetch of copper and other metals
US5405518A (en) * 1994-04-26 1995-04-11 Industrial Technology Research Institute Workpiece holder apparatus
US5464509A (en) * 1994-05-20 1995-11-07 Massachusetts Institute Of Technology P-N junction etch-stop technique for electrochemical etching of semiconductors
KR0169344B1 (ko) * 1994-12-16 1999-02-01 심상철 바이어스 방법에 의해 형성된 두께가 매우 얇고 균일한 단결정 실리콘 박막을 갖는 에스-오-아이 웨이퍼의 제조방법 및 그 구조
DE19653097A1 (de) * 1996-12-20 1998-07-02 Forschungszentrum Juelich Gmbh Schicht mit porösem Schichtbereich, eine solche Schicht enthaltendes Interferenzfilter sowie Verfahren zu ihrer Herstellung
US5935404A (en) * 1997-01-22 1999-08-10 International Business Machines Corporation Method of performing processes on features with electricity
US5965005A (en) * 1997-09-22 1999-10-12 National Science Council Mask for porous silicon formation
WO2005022135A1 (en) * 2003-08-27 2005-03-10 Prussin Simon A In situ determination of resistivity, mobility and dopant concentration profiles
US7150820B2 (en) * 2003-09-22 2006-12-19 Semitool, Inc. Thiourea- and cyanide-free bath and process for electrolytic etching of gold
US20060207890A1 (en) * 2005-03-15 2006-09-21 Norbert Staud Electrochemical etching
US7569490B2 (en) * 2005-03-15 2009-08-04 Wd Media, Inc. Electrochemical etching
US8157978B2 (en) * 2009-01-29 2012-04-17 International Business Machines Corporation Etching system and method for forming multiple porous semiconductor regions with different optical and structural properties on a single semiconductor wafer
US11289386B2 (en) 2016-04-26 2022-03-29 Active Layer Parametrics, Inc. Methods and apparatus for test pattern forming and film property measurement
WO2017189582A1 (en) 2016-04-26 2017-11-02 Active Layer Parametrics, Inc. Methods and systems for material property profiling of thin films
US12313669B2 (en) 2023-04-21 2025-05-27 Active Layer Parametrics, Inc. Methods and tools for electrical property depth profiling using electro-etching

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2656496A (en) * 1951-07-31 1953-10-20 Bell Telephone Labor Inc Semiconductor translating device
NL122951C (nl) * 1961-08-28 1968-01-15 Philips Nv Lagen-transistor en werkwijze voor het vervaardigen daarvan
US3265599A (en) * 1963-06-25 1966-08-09 Litton Systems Inc Formation of grain boundary photoorienter by electrolytic etching
US3325384A (en) * 1963-11-13 1967-06-13 Buckbee Mears Co Shaped cathode for electrolytic etching
NL153947B (nl) * 1967-02-25 1977-07-15 Philips Nv Werkwijze voor het vervaardigen van halfgeleiderinrichtingen, waarbij een selectief elektrolytisch etsproces wordt toegepast en halfgeleiderinrichting verkregen met toepassing van de werkwijze.
US4002511A (en) * 1975-04-16 1977-01-11 Ibm Corporation Method for forming masks comprising silicon nitride and novel mask structures produced thereby
US4069121A (en) * 1975-06-27 1978-01-17 Thomson-Csf Method for producing microscopic passages in a semiconductor body for electron-multiplication applications
US4180439A (en) * 1976-03-15 1979-12-25 International Business Machines Corporation Anodic etching method for the detection of electrically active defects in silicon
US4197142A (en) * 1979-03-07 1980-04-08 Canadian Patents & Development Ltd. Photochemical device for conversion of visible light to electricity

Also Published As

Publication number Publication date
IT1150984B (it) 1986-12-17
JPS631745B2 (https=) 1988-01-13
CA1148111A (en) 1983-06-14
IT8020724A0 (it) 1980-03-18
US4303482A (en) 1981-12-01
DE2917654A1 (de) 1980-11-13

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