DE2917082A1 - Feldeffekttransistor - Google Patents

Feldeffekttransistor

Info

Publication number
DE2917082A1
DE2917082A1 DE19792917082 DE2917082A DE2917082A1 DE 2917082 A1 DE2917082 A1 DE 2917082A1 DE 19792917082 DE19792917082 DE 19792917082 DE 2917082 A DE2917082 A DE 2917082A DE 2917082 A1 DE2917082 A1 DE 2917082A1
Authority
DE
Germany
Prior art keywords
gate electrode
field effect
effect transistor
semiconductor
semiconductor body
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE19792917082
Other languages
German (de)
English (en)
Other versions
DE2917082C2 (enExample
Inventor
Heinz Prof Dr Rer Nat Beneking
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Licentia Patent Verwaltungs GmbH
Original Assignee
Licentia Patent Verwaltungs GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Licentia Patent Verwaltungs GmbH filed Critical Licentia Patent Verwaltungs GmbH
Priority to DE19792917082 priority Critical patent/DE2917082A1/de
Publication of DE2917082A1 publication Critical patent/DE2917082A1/de
Application granted granted Critical
Publication of DE2917082C2 publication Critical patent/DE2917082C2/de
Granted legal-status Critical Current

Links

Classifications

    • H10P30/206—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/2654—Bombardment with radiation with high-energy radiation producing ion implantation in AIIIBV compounds
    • H01L21/26546—Bombardment with radiation with high-energy radiation producing ion implantation in AIIIBV compounds of electrically active species
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/637—Lateral IGFETs having no inversion channels, e.g. buried channel lateral IGFETs, normally-on lateral IGFETs or depletion-mode lateral IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H10P30/21—
    • H10P30/22—
    • H10P76/40—

Landscapes

  • Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
DE19792917082 1979-04-27 1979-04-27 Feldeffekttransistor Granted DE2917082A1 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE19792917082 DE2917082A1 (de) 1979-04-27 1979-04-27 Feldeffekttransistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19792917082 DE2917082A1 (de) 1979-04-27 1979-04-27 Feldeffekttransistor

Publications (2)

Publication Number Publication Date
DE2917082A1 true DE2917082A1 (de) 1980-11-06
DE2917082C2 DE2917082C2 (enExample) 1988-07-21

Family

ID=6069407

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19792917082 Granted DE2917082A1 (de) 1979-04-27 1979-04-27 Feldeffekttransistor

Country Status (1)

Country Link
DE (1) DE2917082A1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0100213A1 (en) * 1982-07-26 1984-02-08 Sperry Corporation Gallium arsenide VLSI chip
EP0166342A3 (en) * 1984-06-29 1986-12-30 International Business Machines Corporation Method of producing a gallium arsenide field effect transistor device

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
JP-Z.: Japanese J. Appl. Phys., Vol. 11, 1972, S. 134-142 *
US-Buch: I.Ruge and J. Graul, Hrsg., Ion Implantation in Semiconductors, Proc. of the 2nd Internat. Conf. on Ion Implantation in Semiconductors, Springer-Verlag 1971, S. 383-388 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0100213A1 (en) * 1982-07-26 1984-02-08 Sperry Corporation Gallium arsenide VLSI chip
EP0166342A3 (en) * 1984-06-29 1986-12-30 International Business Machines Corporation Method of producing a gallium arsenide field effect transistor device

Also Published As

Publication number Publication date
DE2917082C2 (enExample) 1988-07-21

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Legal Events

Date Code Title Description
OAM Search report available
OC Search report available
8127 New person/name/address of the applicant

Owner name: LICENTIA PATENT-VERWALTUNGS-GMBH, 6000 FRANKFURT,

8120 Willingness to grant licences paragraph 23
8110 Request for examination paragraph 44
D2 Grant after examination
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee