DE2847822C2 - Integrierte Injektionslogik-Halbleitervorrichtung - Google Patents

Integrierte Injektionslogik-Halbleitervorrichtung

Info

Publication number
DE2847822C2
DE2847822C2 DE2847822A DE2847822A DE2847822C2 DE 2847822 C2 DE2847822 C2 DE 2847822C2 DE 2847822 A DE2847822 A DE 2847822A DE 2847822 A DE2847822 A DE 2847822A DE 2847822 C2 DE2847822 C2 DE 2847822C2
Authority
DE
Germany
Prior art keywords
zone
conductivity type
semiconductor layer
transistor
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE2847822A
Other languages
German (de)
English (en)
Other versions
DE2847822A1 (de
Inventor
Tadahiko Hamamastsu Shizuoka Hotta
Terumoto Hamamatsu Shizuoka Nonaka
Shin Hamamatsu Shizuoka Yamashita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Yamaha Corp
Original Assignee
Nippon Gakki Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Gakki Co Ltd filed Critical Nippon Gakki Co Ltd
Publication of DE2847822A1 publication Critical patent/DE2847822A1/de
Application granted granted Critical
Publication of DE2847822C2 publication Critical patent/DE2847822C2/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/211—Design considerations for internal polarisation
    • H10D89/213—Design considerations for internal polarisation in field-effect devices
    • H10D89/217—Design considerations for internal polarisation in field-effect devices comprising arrangements for charge injection in static induction transistor logic [SITL] devices

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Bipolar Transistors (AREA)
DE2847822A 1977-11-05 1978-11-03 Integrierte Injektionslogik-Halbleitervorrichtung Expired DE2847822C2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13275677A JPS5466080A (en) 1977-11-05 1977-11-05 Semiconductor device

Publications (2)

Publication Number Publication Date
DE2847822A1 DE2847822A1 (de) 1979-05-10
DE2847822C2 true DE2847822C2 (de) 1987-04-02

Family

ID=15088812

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2847822A Expired DE2847822C2 (de) 1977-11-05 1978-11-03 Integrierte Injektionslogik-Halbleitervorrichtung

Country Status (6)

Country Link
US (1) US4200879A (cg-RX-API-DMAC7.html)
JP (1) JPS5466080A (cg-RX-API-DMAC7.html)
DE (1) DE2847822C2 (cg-RX-API-DMAC7.html)
FR (1) FR2408220A1 (cg-RX-API-DMAC7.html)
GB (1) GB2011179B (cg-RX-API-DMAC7.html)
NL (1) NL7810677A (cg-RX-API-DMAC7.html)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4284997A (en) * 1977-07-07 1981-08-18 Zaidan Hojin Handotai Kenkyu Shinkokai Static induction transistor and its applied devices
JPS56103448A (en) * 1980-01-21 1981-08-18 Hitachi Ltd Semiconductor ic device
US4362981A (en) * 1980-09-12 1982-12-07 Kabushiki Kaisha Daini Seikosha Driving circuit for a stepping motor
US4712122A (en) * 1984-07-26 1987-12-08 Research Development Corp. Heterojunction gate ballistic JFET with channel thinner than Debye length
JP2659931B2 (ja) * 1985-06-29 1997-09-30 財団法人 半導体研究振興会 光制御電力変換装置
US5170229A (en) * 1988-01-16 1992-12-08 Link Analytical Limited Junction field effect transistors with injector region
US5192704A (en) * 1989-06-30 1993-03-09 Texas Instruments Incorporated Method and apparatus for a filament channel pass gate ferroelectric capacitor memory cell
US5136534A (en) * 1989-06-30 1992-08-04 Texas Instruments Incorporated Method and apparatus for a filament channel pass gate ferroelectric capacitor memory cell
USD876693S1 (en) 2017-08-03 2020-02-25 E. Mishan & Sons, Inc. Flashlight baton with crenulate sliding bezel

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3295030A (en) * 1963-12-18 1966-12-27 Signetics Corp Field effect transistor and method
US3453507A (en) * 1967-04-04 1969-07-01 Honeywell Inc Photo-detector
US3721839A (en) * 1971-03-24 1973-03-20 Philips Corp Solid state imaging device with fet sensor
NL7308240A (cg-RX-API-DMAC7.html) * 1973-06-14 1974-12-17
GB1444951A (en) * 1973-06-18 1976-08-04 Mullard Ltd Electronic solid state devices
JPS5510152B2 (cg-RX-API-DMAC7.html) * 1974-03-08 1980-03-14
JPS5811102B2 (ja) * 1975-12-09 1983-03-01 ザイダンホウジン ハンドウタイケンキユウシンコウカイ 半導体集積回路
JPS608628B2 (ja) * 1976-07-05 1985-03-04 ヤマハ株式会社 半導体集積回路装置
JPS5838938B2 (ja) * 1976-08-03 1983-08-26 財団法人半導体研究振興会 半導体集積回路
GB1602361A (en) * 1977-02-21 1981-11-11 Zaidan Hojin Handotai Kenkyu Semiconductor memory devices

Also Published As

Publication number Publication date
DE2847822A1 (de) 1979-05-10
FR2408220B1 (cg-RX-API-DMAC7.html) 1982-08-27
GB2011179A (en) 1979-07-04
JPS5466080A (en) 1979-05-28
NL7810677A (nl) 1979-05-08
FR2408220A1 (fr) 1979-06-01
US4200879A (en) 1980-04-29
GB2011179B (en) 1982-06-16

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Legal Events

Date Code Title Description
OAR Request for search filed
OB Request for examination as to novelty
8110 Request for examination paragraph 44
D2 Grant after examination
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: YAMAHA CORP., HAMAMATSU, SHIZUOKA, JP