DE2833841A1 - Halbleiteranordnung - Google Patents

Halbleiteranordnung

Info

Publication number
DE2833841A1
DE2833841A1 DE19782833841 DE2833841A DE2833841A1 DE 2833841 A1 DE2833841 A1 DE 2833841A1 DE 19782833841 DE19782833841 DE 19782833841 DE 2833841 A DE2833841 A DE 2833841A DE 2833841 A1 DE2833841 A1 DE 2833841A1
Authority
DE
Germany
Prior art keywords
transistor
emitter
injector
semiconductor layer
base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE19782833841
Other languages
German (de)
English (en)
Inventor
Masayuki Kojima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Instruments Inc
Original Assignee
Seiko Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Instruments Inc filed Critical Seiko Instruments Inc
Publication of DE2833841A1 publication Critical patent/DE2833841A1/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/211—Design considerations for internal polarisation
    • H10D89/213—Design considerations for internal polarisation in field-effect devices
    • H10D89/217—Design considerations for internal polarisation in field-effect devices comprising arrangements for charge injection in static induction transistor logic [SITL] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs
    • H10D84/403—Combinations of FETs or IGBTs with BJTs and with one or more of diodes, resistors or capacitors
    • H10D84/409—Combinations of FETs or IGBTs with lateral BJTs and with one or more of diodes, resistors or capacitors

Landscapes

  • Bipolar Integrated Circuits (AREA)
  • Logic Circuits (AREA)
DE19782833841 1977-08-19 1978-08-02 Halbleiteranordnung Withdrawn DE2833841A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9999477A JPS5432986A (en) 1977-08-19 1977-08-19 Semiconductor device

Publications (1)

Publication Number Publication Date
DE2833841A1 true DE2833841A1 (de) 1979-03-01

Family

ID=14262177

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19782833841 Withdrawn DE2833841A1 (de) 1977-08-19 1978-08-02 Halbleiteranordnung

Country Status (4)

Country Link
JP (1) JPS5432986A (enExample)
CH (1) CH623168A5 (enExample)
DE (1) DE2833841A1 (enExample)
GB (1) GB2005071B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3841777A1 (de) * 1988-12-12 1990-06-28 Telefunken Electronic Gmbh Halbleiteranordnung

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6123115Y2 (enExample) * 1980-02-09 1986-07-10

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3841777A1 (de) * 1988-12-12 1990-06-28 Telefunken Electronic Gmbh Halbleiteranordnung

Also Published As

Publication number Publication date
GB2005071B (en) 1982-03-17
JPS5432986A (en) 1979-03-10
CH623168A5 (enExample) 1981-05-15
GB2005071A (en) 1979-04-11

Similar Documents

Publication Publication Date Title
DE3686971T2 (de) Lateraler transistor mit isoliertem gate mit latch-up-festigkeit.
DE2939193C2 (enExample)
DE2047166B2 (de) Integrierte Halbleiteranordnung
DE3411020C2 (enExample)
DE1489031B1 (de) Transistor mit einem scheibenfoermigen Halbleiterkoerper und Verfahren zu seiner Herstellung
DE3027599C2 (enExample)
DE2730373C2 (enExample)
DE1162488B (de) Halbleiterbauelement mit zwei Elektroden an einer Zone und Verfahren zum Betrieb
DE4026121A1 (de) Leitfaehigkeitsmodulations-mosfet
EP0021086A1 (de) Lichtsteuerbare Anordnung
DE2615553C3 (de) Schwellenschaltung mit Hysterese
DE3022122C2 (enExample)
DE2847822C2 (de) Integrierte Injektionslogik-Halbleitervorrichtung
DE3409470C2 (de) Differentialverstärker mit bipolaren Transistoren in CMOS-Technik
DE2833841A1 (de) Halbleiteranordnung
DE2554426A1 (de) Verfahren zur erzeugung einer lokal hohen inversen stromverstaerkung bei einem planartransistor
DE1813130B2 (de) Verfahren zur Herstellung einer Zenerdiode
DE69126316T2 (de) Thyristorstruktur mit schnellem abschalten
DE2051623A1 (de) Steuerbare raumladungsbegrenzte Impedanzeinnchtung fur integrierte Schaltungen
DE2742361C2 (enExample)
DE1299766B (de) Thyristor und Verfahren zu seiner Herstellung
DE4006886A1 (de) Halbleiter-vorrichtung mit einem mis-feldeffekt-transistor von der art einer leitfaehigkeits-modulation
DE3208500A1 (de) Spannungsfester mos-transistor fuer hoechstintegrierte schaltungen
DE2540354A1 (de) Als thermoionische injektionsdiode geeignete halbleiterstruktur
DE3225991C2 (enExample)

Legal Events

Date Code Title Description
8130 Withdrawal