DE2825083A1 - Piezoelektrischer kristalliner film - Google Patents

Piezoelektrischer kristalliner film

Info

Publication number
DE2825083A1
DE2825083A1 DE19782825083 DE2825083A DE2825083A1 DE 2825083 A1 DE2825083 A1 DE 2825083A1 DE 19782825083 DE19782825083 DE 19782825083 DE 2825083 A DE2825083 A DE 2825083A DE 2825083 A1 DE2825083 A1 DE 2825083A1
Authority
DE
Germany
Prior art keywords
copper
piezoelectric
film according
crystalline film
crystalline
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE19782825083
Other languages
German (de)
English (en)
Other versions
DE2825083C2 (US07413550-20080819-C00001.png
Inventor
Tasuku Mashio
Hiroshi Nishiyama
Toshio Ogawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Murata Manufacturing Co Ltd
Original Assignee
Murata Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP6845477A external-priority patent/JPS543296A/ja
Priority claimed from JP6845577A external-priority patent/JPS543297A/ja
Priority claimed from JP7015077A external-priority patent/JPS544399A/ja
Priority claimed from JP7015177A external-priority patent/JPS544400A/ja
Application filed by Murata Manufacturing Co Ltd filed Critical Murata Manufacturing Co Ltd
Publication of DE2825083A1 publication Critical patent/DE2825083A1/de
Application granted granted Critical
Publication of DE2825083C2 publication Critical patent/DE2825083C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/85—Piezoelectric or electrostrictive active materials
    • H10N30/853—Ceramic compositions

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Physical Vapour Deposition (AREA)
DE19782825083 1977-06-09 1978-06-08 Piezoelektrischer kristalliner film Granted DE2825083A1 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP6845477A JPS543296A (en) 1977-06-09 1977-06-09 Piezoelectric crystal layer of zinc oxide
JP6845577A JPS543297A (en) 1977-06-09 1977-06-09 Piezoelectric crystal film of zinc oxide
JP7015077A JPS544399A (en) 1977-06-13 1977-06-13 Piezoelectric crystal film of zinc oxide
JP7015177A JPS544400A (en) 1977-06-13 1977-06-13 Piezoelectric crystal film of zinc oxide

Publications (2)

Publication Number Publication Date
DE2825083A1 true DE2825083A1 (de) 1978-12-21
DE2825083C2 DE2825083C2 (US07413550-20080819-C00001.png) 1987-01-22

Family

ID=27464993

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19782825083 Granted DE2825083A1 (de) 1977-06-09 1978-06-08 Piezoelektrischer kristalliner film

Country Status (2)

Country Link
US (1) US4182793A (US07413550-20080819-C00001.png)
DE (1) DE2825083A1 (US07413550-20080819-C00001.png)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4243697A (en) * 1979-03-14 1981-01-06 The United States Of America As Represented By The Secretary Of The Air Force Self biased ferrite resonators
JP2911186B2 (ja) * 1989-07-10 1999-06-23 科学技術振興事業団 複合酸化物薄膜
US6127768A (en) * 1997-05-09 2000-10-03 Kobe Steel Usa, Inc. Surface acoustic wave and bulk acoustic wave devices using a Zn.sub.(1-X) Yx O piezoelectric layer device
CN110002876A (zh) * 2019-04-18 2019-07-12 昌吉学院 一种硫化铜硒掺杂热电材料的超低温烧结方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2148132A1 (de) * 1970-09-29 1972-04-13 Matsushita Electric Ind Co Ltd Verfahren zur Herstellung dünner piezoelektrischer Filme

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3388002A (en) * 1964-08-06 1968-06-11 Bell Telephone Labor Inc Method of forming a piezoelectric ultrasonic transducer
US3409464A (en) * 1964-04-29 1968-11-05 Clevite Corp Piezoelectric materials
US3573960A (en) * 1968-12-19 1971-04-06 Bell Telephone Labor Inc Torsional mode elastic wave transducers
US3655429A (en) * 1969-04-16 1972-04-11 Westinghouse Electric Corp Method of forming thin insulating films particularly for piezoelectric transducers
US3988232A (en) * 1974-06-25 1976-10-26 Matsushita Electric Industrial Co., Ltd. Method of making crystal films
JPS5396494A (en) * 1977-02-02 1978-08-23 Murata Manufacturing Co Piezooelectric crystal film of zinc oxide

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2148132A1 (de) * 1970-09-29 1972-04-13 Matsushita Electric Ind Co Ltd Verfahren zur Herstellung dünner piezoelektrischer Filme

Also Published As

Publication number Publication date
US4182793A (en) 1980-01-08
DE2825083C2 (US07413550-20080819-C00001.png) 1987-01-22

Similar Documents

Publication Publication Date Title
DE60029706T2 (de) Transparentes leitendes laminat, sein herstellungsverfahren, und anzeigevorrichtung mit transparentem leitendem laminat
DE2802901C3 (de) Piezoelektrischer kristalliner Film
DE19841681A1 (de) Elektrode für dielektrisches Dünnschicht-Bauelement, Verfahren zum Herstellen derselben und die Elektrode verwendender Ultraschallwellenoszillator
DE2148132A1 (de) Verfahren zur Herstellung dünner piezoelektrischer Filme
DE2036621A1 (de) Zusammengesetzter Korper
DE2832714C3 (de) Piezoelektrische kristalline Filme aus Zinkoxyd
DE3852510T2 (de) Verfahren zur Herstellung einer leitenden oder supraleitenden dünnen Schicht.
DE2839715C2 (US07413550-20080819-C00001.png)
DE2839810C2 (US07413550-20080819-C00001.png)
DE19631107A1 (de) Verfahren zur Bildung eines Einkristall-Diamantfilms
DE1665267C3 (de) Heteroepitaxiale Mehrschichanordnung
DE2803999C3 (US07413550-20080819-C00001.png)
DE2825083A1 (de) Piezoelektrischer kristalliner film
DE2839550C2 (US07413550-20080819-C00001.png)
DE2804000C3 (de) Piezoelektrischer kristalliner Film
DE2839577C2 (US07413550-20080819-C00001.png)
DE102010036256B4 (de) Mikroakustisches Bauelement und Herstellungsverfahren
DE2811044C3 (de) Piezoelektrische kristalline Filme
DE3124456C2 (de) Halbleiterbauelement sowie Verfahren zu dessen Herstellung
DE112017003479T5 (de) Substrat für ein akustisches oberflächenwellenelement und herstellungsverfahren dafür
DE112013001279B4 (de) Halbleiterbauelement mit einer orientierten Schicht und Verfahren zu seiner Herstellung
DE68904910T2 (de) Verfahren zur darstellung von supraleitender keramik mit ausgerichteten kristalliten durch elektrochemische abscheidung und so hergestellte supraleitende duennschichtkeramik.
EP0401663A2 (de) Dünne unorientiert mikrokristalline Aluminiumnitridschicht auf einer Oberfläche und Verfahren zu ihrer Herstellung
DE4128461A1 (de) Verfahren zur herstellung ferroelektrischer wismuttitanat-schichten auf einem substrat

Legal Events

Date Code Title Description
8110 Request for examination paragraph 44
D2 Grant after examination
8364 No opposition during term of opposition