DE2822146C2 - Heterostruktur-Halbleiterlaserdiode und Verfahren zur Herstellung einer Heterostruktur-Halbleiterdiode - Google Patents

Heterostruktur-Halbleiterlaserdiode und Verfahren zur Herstellung einer Heterostruktur-Halbleiterdiode

Info

Publication number
DE2822146C2
DE2822146C2 DE2822146A DE2822146A DE2822146C2 DE 2822146 C2 DE2822146 C2 DE 2822146C2 DE 2822146 A DE2822146 A DE 2822146A DE 2822146 A DE2822146 A DE 2822146A DE 2822146 C2 DE2822146 C2 DE 2822146C2
Authority
DE
Germany
Prior art keywords
layer
laser
laser diode
trench
cover layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE2822146A
Other languages
German (de)
English (en)
Other versions
DE2822146A1 (de
Inventor
Peter 7910 Neu-Ulm Marschall
Ewald Dipl.-Phys. 7900 Ulm Schlosser
Claus 7904 Erbach Wölk
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Licentia Patent Verwaltungs GmbH
Original Assignee
Licentia Patent Verwaltungs GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Licentia Patent Verwaltungs GmbH filed Critical Licentia Patent Verwaltungs GmbH
Priority to DE2822146A priority Critical patent/DE2822146C2/de
Priority to GB7916322A priority patent/GB2021307B/en
Priority to FR7912806A priority patent/FR2426348B1/fr
Priority to JP6058679A priority patent/JPS54152988A/ja
Priority to IT22832/79A priority patent/IT1112931B/it
Priority to US06/041,171 priority patent/US4278949A/en
Priority to CA327,990A priority patent/CA1128634A/en
Publication of DE2822146A1 publication Critical patent/DE2822146A1/de
Priority to DE19813102875 priority patent/DE3102875C2/de
Application granted granted Critical
Publication of DE2822146C2 publication Critical patent/DE2822146C2/de
Priority to JP1987127526U priority patent/JPS6422068U/ja
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2202—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure by making a groove in the upper laser structure
    • H10W72/30—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0233—Mounting configuration of laser chips
    • H01S5/0234—Up-side down mountings, e.g. Flip-chip, epi-side down mountings or junction down mountings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H01S5/02355—Fixing laser chips on mounts
    • H01S5/0237—Fixing laser chips on mounts by soldering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3202—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth
    • H10W72/59—

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
DE2822146A 1978-05-20 1978-05-20 Heterostruktur-Halbleiterlaserdiode und Verfahren zur Herstellung einer Heterostruktur-Halbleiterdiode Expired DE2822146C2 (de)

Priority Applications (9)

Application Number Priority Date Filing Date Title
DE2822146A DE2822146C2 (de) 1978-05-20 1978-05-20 Heterostruktur-Halbleiterlaserdiode und Verfahren zur Herstellung einer Heterostruktur-Halbleiterdiode
GB7916322A GB2021307B (en) 1978-05-20 1979-05-10 Semiconductor laser
JP6058679A JPS54152988A (en) 1978-05-20 1979-05-18 Semiconductor laser and method of fabricating same
IT22832/79A IT1112931B (it) 1978-05-20 1979-05-18 Laser a semiconduttore e procedimento per la fabbricazione di un laser a semiconduttore
FR7912806A FR2426348B1 (fr) 1978-05-20 1979-05-18 Laser a semi-conducteurs et procede de production d'un tel laser
US06/041,171 US4278949A (en) 1978-05-20 1979-05-21 Semiconductor laser structure and manufacture
CA327,990A CA1128634A (en) 1978-05-20 1979-05-22 Semiconductor laser structure and manufacture
DE19813102875 DE3102875C2 (de) 1978-05-20 1981-01-29 Heterostruktur-Halbleiterlaserdiode
JP1987127526U JPS6422068U (cg-RX-API-DMAC10.html) 1978-05-20 1987-08-24

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2822146A DE2822146C2 (de) 1978-05-20 1978-05-20 Heterostruktur-Halbleiterlaserdiode und Verfahren zur Herstellung einer Heterostruktur-Halbleiterdiode

Publications (2)

Publication Number Publication Date
DE2822146A1 DE2822146A1 (de) 1979-11-22
DE2822146C2 true DE2822146C2 (de) 1982-11-25

Family

ID=6039879

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2822146A Expired DE2822146C2 (de) 1978-05-20 1978-05-20 Heterostruktur-Halbleiterlaserdiode und Verfahren zur Herstellung einer Heterostruktur-Halbleiterdiode

Country Status (7)

Country Link
US (1) US4278949A (cg-RX-API-DMAC10.html)
JP (2) JPS54152988A (cg-RX-API-DMAC10.html)
CA (1) CA1128634A (cg-RX-API-DMAC10.html)
DE (1) DE2822146C2 (cg-RX-API-DMAC10.html)
FR (1) FR2426348B1 (cg-RX-API-DMAC10.html)
GB (1) GB2021307B (cg-RX-API-DMAC10.html)
IT (1) IT1112931B (cg-RX-API-DMAC10.html)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2933035A1 (de) * 1979-08-16 1981-03-26 Licentia Patent-Verwaltungs-Gmbh, 60596 Frankfurt Halbleiterlaser
DE3343051A1 (de) * 1983-11-29 1985-06-05 Licentia Gmbh Verfahren und anordnung zum erzeugen elektrischer steuerimpulse
DE3604295A1 (de) * 1986-02-12 1987-08-13 Telefunken Electronic Gmbh Heterostruktur-halbleiterlaserdiode
DE3604294A1 (de) * 1986-02-12 1987-08-13 Telefunken Electronic Gmbh Heterostruktur-halbleiterlaserdioden

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3102875C2 (de) * 1978-05-20 1984-02-16 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Heterostruktur-Halbleiterlaserdiode
DE3002469A1 (de) * 1980-01-24 1981-07-30 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Optische faserleitung zwischen einem halbleiterlaser und einem ersten faserstecker
JPS56110289A (en) * 1980-02-05 1981-09-01 Mitsubishi Electric Corp Manufacture of semiconductor laser element
DE3005645A1 (de) * 1980-02-15 1981-08-20 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren zur modulation eines halbleiterlasers
DE3012361A1 (de) * 1980-03-29 1981-10-08 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Halbleiterlaser
JPS5710992A (en) * 1980-06-24 1982-01-20 Sumitomo Electric Ind Ltd Semiconductor device and manufacture therefor
US4408331A (en) * 1981-03-25 1983-10-04 Bell Telephone Laboratories, Incorporated V-Groove semiconductor light emitting devices
GB2111743B (en) * 1981-08-25 1985-11-27 Handotai Kenkyu Shinkokai Semiconductor laser
NL8104068A (nl) * 1981-09-02 1983-04-05 Philips Nv Halfgeleiderlaser.
NL8201409A (nl) * 1982-04-02 1983-11-01 Philips Nv Halfgeleiderlaser en werkwijze ter vervaardiging ervan.
DE3214700A1 (de) * 1982-04-21 1983-10-27 Licentia Gmbh Optisches nachrichtenuebertragungssystem
JPS5967677A (ja) * 1982-07-01 1984-04-17 Semiconductor Res Found 光集積回路
DE3231732A1 (de) * 1982-08-26 1984-03-01 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Elektrischer kontakt
NL8301331A (nl) * 1983-04-15 1984-11-01 Philips Nv Halfgeleiderinrichting voor het opwekken of versterken van electromagnetische straling en werkwijze ter vervaardiging daarvan.
DE3406361A1 (de) * 1984-02-22 1985-08-29 Telefunken electronic GmbH, 7100 Heilbronn Doppel-heterostruktur-laser und verfahren zu seiner herstellung
US4605942A (en) * 1984-10-09 1986-08-12 At&T Bell Laboratories Multiple wavelength light emitting devices
US5770475A (en) * 1996-09-23 1998-06-23 Electronics And Telecommunications Research Institute Crystal growth method for compound semiconductor
RU2146842C1 (ru) * 1999-04-27 2000-03-20 Микаелян Геворк Татевосович Способ изготовления полупроводникового светоизлучающего элемента

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1273284A (en) * 1970-10-13 1972-05-03 Standard Telephones Cables Ltd Improvements in or relating to injection lasers
JPS5622395B2 (cg-RX-API-DMAC10.html) * 1973-10-17 1981-05-25
US3946334A (en) * 1973-11-14 1976-03-23 Nippon Electric Company, Limited Injection semiconductor laser device
JPS5810874B2 (ja) * 1974-05-21 1983-02-28 三菱電機株式会社 ハンドウタイハツコウソシ
US3938172A (en) * 1974-05-22 1976-02-10 Rca Corporation Semiconductor injection laser
GB1494518A (en) * 1975-02-04 1977-12-07 Standard Telephones Cables Ltd Heterostructure lasers
JPS52106283A (en) * 1976-03-03 1977-09-06 Nippon Telegr & Teleph Corp <Ntt> Semiconductor laser unit
JPS52109884A (en) * 1976-03-11 1977-09-14 Nec Corp Stripe type hetero junction semoonductor laser

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2933035A1 (de) * 1979-08-16 1981-03-26 Licentia Patent-Verwaltungs-Gmbh, 60596 Frankfurt Halbleiterlaser
DE3343051A1 (de) * 1983-11-29 1985-06-05 Licentia Gmbh Verfahren und anordnung zum erzeugen elektrischer steuerimpulse
DE3604295A1 (de) * 1986-02-12 1987-08-13 Telefunken Electronic Gmbh Heterostruktur-halbleiterlaserdiode
DE3604294A1 (de) * 1986-02-12 1987-08-13 Telefunken Electronic Gmbh Heterostruktur-halbleiterlaserdioden

Also Published As

Publication number Publication date
JPS6422068U (cg-RX-API-DMAC10.html) 1989-02-03
IT1112931B (it) 1986-01-20
FR2426348A1 (fr) 1979-12-14
DE2822146A1 (de) 1979-11-22
GB2021307B (en) 1982-07-28
FR2426348B1 (fr) 1986-03-28
IT7922832A0 (it) 1979-05-18
US4278949A (en) 1981-07-14
JPS54152988A (en) 1979-12-01
GB2021307A (en) 1979-11-28
CA1128634A (en) 1982-07-27

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