DE2817426A1 - Fotolack fuer roentgenstrahlenlithographie - Google Patents

Fotolack fuer roentgenstrahlenlithographie

Info

Publication number
DE2817426A1
DE2817426A1 DE19782817426 DE2817426A DE2817426A1 DE 2817426 A1 DE2817426 A1 DE 2817426A1 DE 19782817426 DE19782817426 DE 19782817426 DE 2817426 A DE2817426 A DE 2817426A DE 2817426 A1 DE2817426 A1 DE 2817426A1
Authority
DE
Germany
Prior art keywords
ray
photoresist
ethyl acrylate
rays
terpolymer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE19782817426
Other languages
German (de)
English (en)
Inventor
Rudolf August Herbert Heinecke
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TDK Micronas GmbH
Original Assignee
Deutsche ITT Industries GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Deutsche ITT Industries GmbH filed Critical Deutsche ITT Industries GmbH
Publication of DE2817426A1 publication Critical patent/DE2817426A1/de
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0388—Macromolecular compounds which are rendered insoluble or differentially wettable with ethylenic or acetylenic bands in the side chains of the photopolymer
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Materials For Photolithography (AREA)
DE19782817426 1977-04-26 1978-04-21 Fotolack fuer roentgenstrahlenlithographie Withdrawn DE2817426A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB1730877A GB1602724A (en) 1977-04-26 1977-04-26 Resist material for x-ray lithography

Publications (1)

Publication Number Publication Date
DE2817426A1 true DE2817426A1 (de) 1978-11-02

Family

ID=10092910

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19782817426 Withdrawn DE2817426A1 (de) 1977-04-26 1978-04-21 Fotolack fuer roentgenstrahlenlithographie

Country Status (4)

Country Link
JP (1) JPS53135703A (ja)
DE (1) DE2817426A1 (ja)
FR (1) FR2389156A1 (ja)
GB (1) GB1602724A (ja)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2451050A1 (fr) * 1979-03-09 1980-10-03 Thomson Csf Composition de photomasquage, son procede de preparation, et masque obtenu
FR2461967A2 (fr) * 1979-07-17 1981-02-06 Thomson Csf Composition de photomasquage, son procede de preparation, et masque obtenu
EP0016679B1 (fr) * 1979-03-09 1982-06-09 Thomson-Csf Substances de photomasquage, leur procédé de préparation, et masque obtenu
US4588671A (en) * 1981-12-21 1986-05-13 Institut Khimii Akademii Nauk Sssr Photo and electron resist with donor-acceptor complex and light sensitive compound
JP2002110505A (ja) * 2000-09-27 2002-04-12 Mitsubishi Electric Corp 露光方法、露光装置、ｘ線マスク、レジスト、半導体装置および微細構造体

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5290269A (en) * 1976-01-23 1977-07-29 Nippon Telegr & Teleph Corp <Ntt> Forming method for fine resist patterns
JPS5376825A (en) * 1976-12-20 1978-07-07 Cho Lsi Gijutsu Kenkyu Kumiai Radiation sensitive positive regist material
JPS53100774A (en) * 1977-02-15 1978-09-02 Nippon Telegr & Teleph Corp <Ntt> Resist composition for short eavelength ultraviolet light
JPS53102025A (en) * 1977-02-18 1978-09-06 Hitachi Ltd Radiation sensitive organic high molecular material
JPS53116831A (en) * 1977-03-23 1978-10-12 Toshiba Corp Radioactive-ray sensitive material

Also Published As

Publication number Publication date
FR2389156B1 (ja) 1983-08-26
GB1602724A (en) 1981-11-18
JPS5721698B2 (ja) 1982-05-08
JPS53135703A (en) 1978-11-27
FR2389156A1 (fr) 1978-11-24

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Legal Events

Date Code Title Description
8110 Request for examination paragraph 44
8130 Withdrawal