DE2816949C3 - Monolithisch integrierte Halbleiteranordnung und deren Verwendung zum Aufbau einer Speicheranordnung - Google Patents

Monolithisch integrierte Halbleiteranordnung und deren Verwendung zum Aufbau einer Speicheranordnung

Info

Publication number
DE2816949C3
DE2816949C3 DE2816949A DE2816949A DE2816949C3 DE 2816949 C3 DE2816949 C3 DE 2816949C3 DE 2816949 A DE2816949 A DE 2816949A DE 2816949 A DE2816949 A DE 2816949A DE 2816949 C3 DE2816949 C3 DE 2816949C3
Authority
DE
Germany
Prior art keywords
zone
injection
transistor
inverting
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE2816949A
Other languages
German (de)
English (en)
Other versions
DE2816949B2 (de
DE2816949A1 (de
Inventor
Erich Dipl.-Ing. 7036 Schönaich Klink
Dipl.-Ing. Dr. Siegfried 7000 Stuttgart Wiedmann
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
IBM Deutschland GmbH
Original Assignee
IBM Deutschland GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by IBM Deutschland GmbH filed Critical IBM Deutschland GmbH
Priority to DE2816949A priority Critical patent/DE2816949C3/de
Priority to JP2881979A priority patent/JPS54140885A/ja
Priority to EP79100816A priority patent/EP0004871B1/de
Priority to DE7979100816T priority patent/DE2960919D1/de
Priority to US06/027,223 priority patent/US4259730A/en
Publication of DE2816949A1 publication Critical patent/DE2816949A1/de
Publication of DE2816949B2 publication Critical patent/DE2816949B2/de
Application granted granted Critical
Publication of DE2816949C3 publication Critical patent/DE2816949C3/de
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/411—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only
    • G11C11/4113—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only with at least one cell access to base or collector of at least one of said transistors, e.g. via access diodes, access transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/26—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback
    • H03K3/28—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback
    • H03K3/281—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator
    • H03K3/286—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator bistable
    • H03K3/288—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator bistable using additional transistors in the input circuit
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/63—Combinations of vertical and lateral BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/65—Integrated injection logic
    • H10W10/031—
    • H10W10/30—

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Logic Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
DE2816949A 1978-04-19 1978-04-19 Monolithisch integrierte Halbleiteranordnung und deren Verwendung zum Aufbau einer Speicheranordnung Expired DE2816949C3 (de)

Priority Applications (5)

Application Number Priority Date Filing Date Title
DE2816949A DE2816949C3 (de) 1978-04-19 1978-04-19 Monolithisch integrierte Halbleiteranordnung und deren Verwendung zum Aufbau einer Speicheranordnung
JP2881979A JPS54140885A (en) 1978-04-19 1979-03-14 I2l semiconductor device
EP79100816A EP0004871B1 (de) 1978-04-19 1979-03-16 Monolithisch integrierte Halbleiteranordnung mit mindestens einer I2L-Struktur, Speicherzelle unter Verwendung einer derartigen Halbleiteranordnung sowie integrierte Speichermatrix unter Verwendung einer derartigen Speicherzelle
DE7979100816T DE2960919D1 (en) 1978-04-19 1979-03-16 Monolithic integrated semiconductor device with at least one i2l structure, memory cell using such device and memory matrix using such memory cell
US06/027,223 US4259730A (en) 1978-04-19 1979-04-05 IIL With partially spaced collars

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2816949A DE2816949C3 (de) 1978-04-19 1978-04-19 Monolithisch integrierte Halbleiteranordnung und deren Verwendung zum Aufbau einer Speicheranordnung

Publications (3)

Publication Number Publication Date
DE2816949A1 DE2816949A1 (de) 1979-10-25
DE2816949B2 DE2816949B2 (de) 1980-11-20
DE2816949C3 true DE2816949C3 (de) 1981-07-16

Family

ID=6037382

Family Applications (2)

Application Number Title Priority Date Filing Date
DE2816949A Expired DE2816949C3 (de) 1978-04-19 1978-04-19 Monolithisch integrierte Halbleiteranordnung und deren Verwendung zum Aufbau einer Speicheranordnung
DE7979100816T Expired DE2960919D1 (en) 1978-04-19 1979-03-16 Monolithic integrated semiconductor device with at least one i2l structure, memory cell using such device and memory matrix using such memory cell

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE7979100816T Expired DE2960919D1 (en) 1978-04-19 1979-03-16 Monolithic integrated semiconductor device with at least one i2l structure, memory cell using such device and memory matrix using such memory cell

Country Status (4)

Country Link
US (1) US4259730A (enExample)
EP (1) EP0004871B1 (enExample)
JP (1) JPS54140885A (enExample)
DE (2) DE2816949C3 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2855866C3 (de) * 1978-12-22 1981-10-29 Ibm Deutschland Gmbh, 7000 Stuttgart Verfahren und Schaltungsanordnung zum Betreiben eines integrierten Halbleiterspeichers
DE2926050C2 (de) * 1979-06-28 1981-10-01 Ibm Deutschland Gmbh, 7000 Stuttgart Verfahren und Schaltungsanordnung zum Lesen Und/oder Schreiben eines integrierten Halbleiterspeichers mit Speicherzellen in MTL-Technik
DE2944141A1 (de) * 1979-11-02 1981-05-14 Ibm Deutschland Gmbh, 7000 Stuttgart Monolithisch integrierte speicheranordnung
DE2951945A1 (de) * 1979-12-22 1981-07-02 Ibm Deutschland Gmbh, 7000 Stuttgart Schaltungsanordnung zur kapazitiven lesesignalverstaerkung in einem integrierten halbleiterspeicher mit einem intergrierten halbleiterspeicher mit speicherzellen in mtl-technik
JPS5848521U (ja) * 1981-09-30 1983-04-01 三井・デュポン　ポリケミカル株式会社 自動車用合成樹脂製窓枠モ−ルデイング
JPS5848522U (ja) * 1981-09-30 1983-04-01 三井・デュポン　ポリケミカル株式会社 合成樹脂製の自動車窓枠モ−ルデイング
DE3173744D1 (en) * 1981-10-30 1986-03-20 Ibm Deutschland Method for reading a semiconductor memory
JPS6449417U (enExample) * 1987-09-22 1989-03-27

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7107040A (enExample) * 1971-05-22 1972-11-24
US4021786A (en) * 1975-10-30 1977-05-03 Fairchild Camera And Instrument Corporation Memory cell circuit and semiconductor structure therefore
DE2612666C2 (de) * 1976-03-25 1982-11-18 Ibm Deutschland Gmbh, 7000 Stuttgart Integrierte, invertierende logische Schaltung
US4137109A (en) * 1976-04-12 1979-01-30 Texas Instruments Incorporated Selective diffusion and etching method for isolation of integrated logic circuit
NL7700420A (nl) * 1977-01-17 1978-07-19 Philips Nv Halfgeleiderinrichting en werkwijze ter ver- vaardiging daarvan.
US4112511A (en) * 1977-09-13 1978-09-05 Signetics Corporation Four transistor static bipolar memory cell using merged transistors

Also Published As

Publication number Publication date
EP0004871A1 (de) 1979-10-31
JPS54140885A (en) 1979-11-01
JPS5643616B2 (enExample) 1981-10-14
DE2816949B2 (de) 1980-11-20
EP0004871B1 (de) 1981-10-07
US4259730A (en) 1981-03-31
DE2816949A1 (de) 1979-10-25
DE2960919D1 (en) 1981-12-17

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Legal Events

Date Code Title Description
OAP Request for examination filed
OD Request for examination
C3 Grant after two publication steps (3rd publication)
8339 Ceased/non-payment of the annual fee