DE2755852C2 - Anlage zum Behandeln von Substraten mittels eines Ionenstrahls - Google Patents
Anlage zum Behandeln von Substraten mittels eines IonenstrahlsInfo
- Publication number
- DE2755852C2 DE2755852C2 DE2755852A DE2755852A DE2755852C2 DE 2755852 C2 DE2755852 C2 DE 2755852C2 DE 2755852 A DE2755852 A DE 2755852A DE 2755852 A DE2755852 A DE 2755852A DE 2755852 C2 DE2755852 C2 DE 2755852C2
- Authority
- DE
- Germany
- Prior art keywords
- substrates
- ion beam
- drum
- ion
- working chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 title claims description 40
- 238000010884 ion-beam technique Methods 0.000 title claims description 21
- 238000009434 installation Methods 0.000 claims 1
- 150000002500 ions Chemical class 0.000 description 8
- 238000005468 ion implantation Methods 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 5
- 230000017525 heat dissipation Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000002513 implantation Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000004100 electronic packaging Methods 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CH1634276A CH607836A5 (OSRAM) | 1976-12-27 | 1976-12-27 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE2755852A1 DE2755852A1 (de) | 1978-06-29 |
| DE2755852C2 true DE2755852C2 (de) | 1983-05-11 |
Family
ID=4416485
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2755852A Expired DE2755852C2 (de) | 1976-12-27 | 1977-12-15 | Anlage zum Behandeln von Substraten mittels eines Ionenstrahls |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US4155011A (OSRAM) |
| CH (1) | CH607836A5 (OSRAM) |
| DE (1) | DE2755852C2 (OSRAM) |
| FR (1) | FR2375716A1 (OSRAM) |
| GB (1) | GB1592589A (OSRAM) |
| NL (1) | NL173218C (OSRAM) |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2412939A1 (fr) * | 1977-12-23 | 1979-07-20 | Anvar | Implanteur d'ions a fort courant |
| US4247781A (en) * | 1979-06-29 | 1981-01-27 | International Business Machines Corporation | Cooled target disc for high current ion implantation method and apparatus |
| US4514636A (en) * | 1979-09-14 | 1985-04-30 | Eaton Corporation | Ion treatment apparatus |
| US4261762A (en) * | 1979-09-14 | 1981-04-14 | Eaton Corporation | Method for conducting heat to or from an article being treated under vacuum |
| US4743570A (en) * | 1979-12-21 | 1988-05-10 | Varian Associates, Inc. | Method of thermal treatment of a wafer in an evacuated environment |
| US4680061A (en) * | 1979-12-21 | 1987-07-14 | Varian Associates, Inc. | Method of thermal treatment of a wafer in an evacuated environment |
| US4909314A (en) * | 1979-12-21 | 1990-03-20 | Varian Associates, Inc. | Apparatus for thermal treatment of a wafer in an evacuated environment |
| US4453080A (en) * | 1981-07-20 | 1984-06-05 | Varian Associates, Inc. | Temperature control of a workpiece under ion implantation |
| US5389793A (en) * | 1983-08-15 | 1995-02-14 | Applied Materials, Inc. | Apparatus and methods for ion implantation |
| GB8417040D0 (en) * | 1984-07-04 | 1984-08-08 | Salford University Of | Modifying properties of material |
| GB8418063D0 (en) * | 1984-07-16 | 1984-08-22 | Atomic Energy Authority Uk | Temperature control in vacuum |
| US4733091A (en) * | 1984-09-19 | 1988-03-22 | Applied Materials, Inc. | Systems and methods for ion implantation of semiconductor wafers |
| US4672210A (en) * | 1985-09-03 | 1987-06-09 | Eaton Corporation | Ion implanter target chamber |
| JPS63150848A (ja) * | 1986-12-12 | 1988-06-23 | Jeol Ltd | 二次イオン質量分析装置用試料ホルダ |
| FR2660106B1 (fr) * | 1990-03-23 | 1994-05-13 | Commissariat A Energie Atomique | Dispositif pour rendre homogene l'implantation d'ions sur la surface d'echantillons plans. |
| US7000418B2 (en) * | 2004-05-14 | 2006-02-21 | Intevac, Inc. | Capacitance sensing for substrate cooling |
| US8378317B1 (en) | 2011-09-07 | 2013-02-19 | Gtat Corporation | Ion implant apparatus and method of ion implantation |
| US8633458B2 (en) | 2011-11-15 | 2014-01-21 | Gtat Corporation | Ion implant apparatus and a method of implanting ions |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| AT227797B (de) * | 1961-04-13 | 1963-06-10 | Hans Dipl Ing Dr Techn List | Einrichtung zum Einstellen und Verändern der Raumlage von in einer Behandlungskammer zu behandelnden Gegenständen |
| GB1280013A (en) * | 1969-09-05 | 1972-07-05 | Atomic Energy Authority Uk | Improvements in or relating to apparatus bombarding a target with ions |
| US3778626A (en) * | 1972-07-28 | 1973-12-11 | Western Electric Co | Mechanical scan system for ion implantation |
| US3930163A (en) * | 1974-03-22 | 1975-12-30 | Varian Associates | Ion beam apparatus with separately replaceable elements |
| US3920233A (en) * | 1974-06-11 | 1975-11-18 | Ibm | Spherical support and translation device for wafers |
-
1976
- 1976-12-27 CH CH1634276A patent/CH607836A5/xx not_active IP Right Cessation
-
1977
- 1977-01-26 NL NLAANVRAGE7700799,A patent/NL173218C/xx not_active IP Right Cessation
- 1977-12-12 GB GB51559/77A patent/GB1592589A/en not_active Expired
- 1977-12-15 DE DE2755852A patent/DE2755852C2/de not_active Expired
- 1977-12-21 US US05/862,683 patent/US4155011A/en not_active Expired - Lifetime
- 1977-12-26 FR FR7739201A patent/FR2375716A1/fr active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| FR2375716B1 (OSRAM) | 1983-07-01 |
| NL7700799A (nl) | 1977-07-29 |
| DE2755852A1 (de) | 1978-06-29 |
| NL173218C (nl) | 1983-12-16 |
| GB1592589A (en) | 1981-07-08 |
| FR2375716A1 (fr) | 1978-07-21 |
| CH607836A5 (OSRAM) | 1978-11-15 |
| NL173218B (nl) | 1983-07-18 |
| US4155011A (en) | 1979-05-15 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OD | Request for examination | ||
| 8125 | Change of the main classification |
Ipc: H01J 37/317 |
|
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |