DE2744194B2 - Elektronisches Speicherelement mit zwei FETs und Verfahren zu seiner Herstellung - Google Patents
Elektronisches Speicherelement mit zwei FETs und Verfahren zu seiner HerstellungInfo
- Publication number
- DE2744194B2 DE2744194B2 DE2744194A DE2744194A DE2744194B2 DE 2744194 B2 DE2744194 B2 DE 2744194B2 DE 2744194 A DE2744194 A DE 2744194A DE 2744194 A DE2744194 A DE 2744194A DE 2744194 B2 DE2744194 B2 DE 2744194B2
- Authority
- DE
- Germany
- Prior art keywords
- memory
- fet
- gate
- layer
- channel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 13
- 238000000034 method Methods 0.000 title claims description 9
- 238000003860 storage Methods 0.000 title description 10
- 230000015654 memory Effects 0.000 claims description 121
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 14
- 229920005591 polysilicon Polymers 0.000 claims description 14
- 238000002347 injection Methods 0.000 claims description 10
- 239000007924 injection Substances 0.000 claims description 10
- 239000012212 insulator Substances 0.000 claims description 10
- 239000000758 substrate Substances 0.000 claims description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- 230000001681 protective effect Effects 0.000 claims description 4
- 238000005516 engineering process Methods 0.000 claims description 3
- 238000009413 insulation Methods 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 claims description 2
- 238000007740 vapor deposition Methods 0.000 claims description 2
- GNFTZDOKVXKIBK-UHFFFAOYSA-N 3-(2-methoxyethoxy)benzohydrazide Chemical compound COCCOC1=CC=CC(C(=O)NN)=C1 GNFTZDOKVXKIBK-UHFFFAOYSA-N 0.000 claims 1
- 210000004027 cell Anatomy 0.000 description 25
- 230000015556 catabolic process Effects 0.000 description 5
- 238000011161 development Methods 0.000 description 5
- 230000018109 developmental process Effects 0.000 description 5
- 230000004048 modification Effects 0.000 description 5
- 238000012986 modification Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 230000000903 blocking effect Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 210000000352 storage cell Anatomy 0.000 description 2
- 229910052716 thallium Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- XUFQPHANEAPEMJ-UHFFFAOYSA-N famotidine Chemical compound NC(N)=NC1=NC(CSCCC(N)=NS(N)(=O)=O)=CS1 XUFQPHANEAPEMJ-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000000246 remedial effect Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
Landscapes
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2744194A DE2744194B2 (de) | 1977-09-30 | 1977-09-30 | Elektronisches Speicherelement mit zwei FETs und Verfahren zu seiner Herstellung |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2744194A DE2744194B2 (de) | 1977-09-30 | 1977-09-30 | Elektronisches Speicherelement mit zwei FETs und Verfahren zu seiner Herstellung |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| DE2744194A1 DE2744194A1 (de) | 1979-04-05 |
| DE2744194B2 true DE2744194B2 (de) | 1979-12-06 |
| DE2744194C3 DE2744194C3 (enExample) | 1980-09-04 |
Family
ID=6020386
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2744194A Granted DE2744194B2 (de) | 1977-09-30 | 1977-09-30 | Elektronisches Speicherelement mit zwei FETs und Verfahren zu seiner Herstellung |
Country Status (1)
| Country | Link |
|---|---|
| DE (1) | DE2744194B2 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0047133A1 (en) * | 1980-08-28 | 1982-03-10 | Fujitsu Limited | High density semiconductor memory device and process for producing the same |
-
1977
- 1977-09-30 DE DE2744194A patent/DE2744194B2/de active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0047133A1 (en) * | 1980-08-28 | 1982-03-10 | Fujitsu Limited | High density semiconductor memory device and process for producing the same |
Also Published As
| Publication number | Publication date |
|---|---|
| DE2744194A1 (de) | 1979-04-05 |
| DE2744194C3 (enExample) | 1980-09-04 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OAP | Request for examination filed | ||
| OD | Request for examination | ||
| C3 | Grant after two publication steps (3rd publication) | ||
| 8340 | Patent of addition ceased/non-payment of fee of main patent |