DE2740764A1 - Verfahren zum herstellen einer halbleitervorrichtung - Google Patents
Verfahren zum herstellen einer halbleitervorrichtungInfo
- Publication number
- DE2740764A1 DE2740764A1 DE19772740764 DE2740764A DE2740764A1 DE 2740764 A1 DE2740764 A1 DE 2740764A1 DE 19772740764 DE19772740764 DE 19772740764 DE 2740764 A DE2740764 A DE 2740764A DE 2740764 A1 DE2740764 A1 DE 2740764A1
- Authority
- DE
- Germany
- Prior art keywords
- electron beam
- semiconductor
- resist
- resist layer
- impact
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 90
- 238000010894 electron beam technology Methods 0.000 title claims abstract description 77
- 239000013078 crystal Substances 0.000 title claims abstract description 27
- 238000004519 manufacturing process Methods 0.000 claims abstract description 26
- 238000005530 etching Methods 0.000 claims abstract description 8
- 238000012937 correction Methods 0.000 claims abstract description 6
- 238000000034 method Methods 0.000 claims description 47
- 230000008569 process Effects 0.000 claims description 24
- 230000015654 memory Effects 0.000 claims description 17
- 238000006073 displacement reaction Methods 0.000 claims description 7
- 238000011156 evaluation Methods 0.000 claims description 3
- 230000005855 radiation Effects 0.000 claims 1
- 239000010410 layer Substances 0.000 description 32
- 235000012431 wafers Nutrition 0.000 description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 230000003252 repetitive effect Effects 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000007786 electrostatic charging Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000004556 laser interferometry Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 239000002966 varnish Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0277—Electrolithographic processes
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Electron Beam Exposure (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19772740764 DE2740764A1 (de) | 1977-09-09 | 1977-09-09 | Verfahren zum herstellen einer halbleitervorrichtung |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19772740764 DE2740764A1 (de) | 1977-09-09 | 1977-09-09 | Verfahren zum herstellen einer halbleitervorrichtung |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE2740764A1 true DE2740764A1 (de) | 1979-03-22 |
| DE2740764C2 DE2740764C2 (enrdf_load_stackoverflow) | 1989-09-14 |
Family
ID=6018580
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19772740764 Granted DE2740764A1 (de) | 1977-09-09 | 1977-09-09 | Verfahren zum herstellen einer halbleitervorrichtung |
Country Status (1)
| Country | Link |
|---|---|
| DE (1) | DE2740764A1 (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4508952A (en) * | 1983-02-17 | 1985-04-02 | University Patents, Inc. | Electron beam cutting |
-
1977
- 1977-09-09 DE DE19772740764 patent/DE2740764A1/de active Granted
Non-Patent Citations (2)
| Title |
|---|
| US-Z.: IEEE Transactions on Electron Devices, Bd. ED-17, 1970, Nr. 6, S. 450-457 * |
| US-Z.: Proceedings of the IEEE, Bd.62, 1974 Nr. 10, S. 1367-1375 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4508952A (en) * | 1983-02-17 | 1985-04-02 | University Patents, Inc. | Electron beam cutting |
Also Published As
| Publication number | Publication date |
|---|---|
| DE2740764C2 (enrdf_load_stackoverflow) | 1989-09-14 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8110 | Request for examination paragraph 44 | ||
| 8125 | Change of the main classification |
Ipc: H01J 37/304 |
|
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |