DE2733675B2 - - Google Patents
Info
- Publication number
- DE2733675B2 DE2733675B2 DE2733675A DE2733675A DE2733675B2 DE 2733675 B2 DE2733675 B2 DE 2733675B2 DE 2733675 A DE2733675 A DE 2733675A DE 2733675 A DE2733675 A DE 2733675A DE 2733675 B2 DE2733675 B2 DE 2733675B2
- Authority
- DE
- Germany
- Prior art keywords
- electrode
- pit
- potential
- substrate
- voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005036 potential barrier Methods 0.000 claims description 29
- 239000000758 substrate Substances 0.000 claims description 24
- 239000002800 charge carrier Substances 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 7
- 239000004065 semiconductor Substances 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims 2
- 230000006870 function Effects 0.000 claims 1
- 230000004888 barrier function Effects 0.000 description 14
- 238000005429 filling process Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 2
- 230000032683 aging Effects 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D44/00—Charge transfer devices
- H10D44/40—Charge-coupled devices [CCD]
- H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes
- H10D44/452—Input structures
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
- G11C19/282—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Semiconductor Memories (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US05/708,351 US4191895A (en) | 1976-07-26 | 1976-07-26 | Low noise CCD input circuit |
Publications (3)
Publication Number | Publication Date |
---|---|
DE2733675A1 DE2733675A1 (de) | 1978-02-09 |
DE2733675B2 true DE2733675B2 (enrdf_load_stackoverflow) | 1979-06-21 |
DE2733675C3 DE2733675C3 (enrdf_load_stackoverflow) | 1980-02-21 |
Family
ID=24845452
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE19772733675 Granted DE2733675A1 (de) | 1976-07-26 | 1977-07-26 | Rauscharme eingangsschaltung fuer ladungsgekoppelte schaltungsanordnungen |
Country Status (7)
Country | Link |
---|---|
US (1) | US4191895A (enrdf_load_stackoverflow) |
JP (1) | JPS5315779A (enrdf_load_stackoverflow) |
CA (1) | CA1104720A (enrdf_load_stackoverflow) |
DE (1) | DE2733675A1 (enrdf_load_stackoverflow) |
FR (1) | FR2363195A1 (enrdf_load_stackoverflow) |
GB (1) | GB1579032A (enrdf_load_stackoverflow) |
NL (1) | NL7708233A (enrdf_load_stackoverflow) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57143782A (en) * | 1981-03-03 | 1982-09-06 | Toshiba Corp | Information processor |
JPS5847378A (ja) * | 1981-09-17 | 1983-03-19 | Canon Inc | 撮像素子 |
US4644572A (en) * | 1985-11-12 | 1987-02-17 | Eastman Kodak Company | Fill and spill for charge input to a CCD |
US5247554A (en) * | 1987-01-16 | 1993-09-21 | Kabushiki Kaisha Toshiba | Charge detection circuit |
JPH07114276B2 (ja) * | 1988-06-30 | 1995-12-06 | 日本電気株式会社 | 固体撮像装置 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3858232A (en) * | 1970-02-16 | 1974-12-31 | Bell Telephone Labor Inc | Information storage devices |
US3789267A (en) * | 1971-06-28 | 1974-01-29 | Bell Telephone Labor Inc | Charge coupled devices employing nonuniform concentrations of immobile charge along the information channel |
US3866067A (en) * | 1973-05-21 | 1975-02-11 | Fairchild Camera Instr Co | Charge coupled device with exposure and antiblooming control |
US3986198A (en) * | 1973-06-13 | 1976-10-12 | Rca Corporation | Introducing signal at low noise level to charge-coupled circuit |
CA1096042A (en) * | 1973-06-13 | 1981-02-17 | Walter F. Kosonocky | Introducing signal to charge-coupled circuit |
-
1976
- 1976-07-26 US US05/708,351 patent/US4191895A/en not_active Expired - Lifetime
-
1977
- 1977-06-30 CA CA281,874A patent/CA1104720A/en not_active Expired
- 1977-07-21 GB GB30631/77A patent/GB1579032A/en not_active Expired
- 1977-07-25 NL NL7708233A patent/NL7708233A/xx not_active Application Discontinuation
- 1977-07-25 JP JP8970677A patent/JPS5315779A/ja active Granted
- 1977-07-26 DE DE19772733675 patent/DE2733675A1/de active Granted
- 1977-07-26 FR FR7722957A patent/FR2363195A1/fr active Granted
Also Published As
Publication number | Publication date |
---|---|
DE2733675C3 (enrdf_load_stackoverflow) | 1980-02-21 |
US4191895A (en) | 1980-03-04 |
FR2363195A1 (fr) | 1978-03-24 |
JPS5637709B2 (enrdf_load_stackoverflow) | 1981-09-02 |
DE2733675A1 (de) | 1978-02-09 |
NL7708233A (nl) | 1978-01-30 |
FR2363195B1 (enrdf_load_stackoverflow) | 1980-07-11 |
CA1104720A (en) | 1981-07-07 |
JPS5315779A (en) | 1978-02-14 |
GB1579032A (en) | 1980-11-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE2411839C3 (de) | Integrierte Feldeffekttransistor-Schaltung | |
DE2745290A1 (de) | Integriertes speicherfeld | |
DE4110369C2 (de) | MOS-Halbleiterbauelement | |
DE2921037A1 (de) | Hochspannungsschaltung fuer isolierschicht-feldeffekttransistoren | |
DE3942640A1 (de) | Mos-halbleitervorrichtung | |
DE2341899C3 (de) | Integrierte Halbleiterschaltung und Verfahren zu ihrem Betrieb | |
DE2064886A1 (de) | Integrierte Schaltung mit Feldeffekt transistoren Ausscheidung aus 2047672 | |
DE2023219A1 (de) | Festwertspeicher | |
DE2252148C3 (de) | Ladungsgekoppelte Halbleiteranordnung und Verfahren zu ihrem Betrieb | |
DE68911809T2 (de) | Integrierbare, aktive Diode. | |
DE1564221A1 (de) | Halbleiterbauelement vom Feldeffekttyp,insbesondere zur Realisierung von logischen Funktionen | |
DE1614300B2 (de) | Feldeffekttransistor mit isolierter Steuerelektrode | |
DE2733675C3 (enrdf_load_stackoverflow) | ||
DE3343453C2 (enrdf_load_stackoverflow) | ||
DE3544149A1 (de) | Doppelt diffundierter Isolierschicht-Feldeffekttransistor | |
DE2734409C3 (de) | Bildaufnahmegerät in CCD-Bauweise | |
DE2842589A1 (de) | Feldeffekttransistor mit verringerter substratsteuerung der kanalbreite | |
DE2733674C3 (de) | Rauscharme Eingangsschaltung für ladungsgekoppelte Schaltungsanordnungen | |
DE1614250C3 (de) | Halbleiteranordnung mit Gruppen von sich kreuzenden Verbindungen | |
DE2411606A1 (de) | Einrichtung und verfahren zur signaleingabe bei ladungsgekoppelten schaltungsanordnungen | |
DE2756535C2 (de) | Integrierte Halbleiterschaltungsanordnung mit in I↑2↑L-Technik betriebenen Transistoren | |
DE2160687B2 (de) | Halbleitervorrichtung | |
DE1589919A1 (de) | Integrierte Schaltmatrix mit Feldeffekttransistoren | |
DE2933440A1 (de) | Eingangsseitig bewertetes transversalfilter mit ladungsuebertragung | |
DE2742936A1 (de) | Dauerspeicher |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
OAP | Request for examination filed | ||
OD | Request for examination | ||
C3 | Grant after two publication steps (3rd publication) | ||
8339 | Ceased/non-payment of the annual fee |