DE2716802A1 - Elektronischer festkoerper-oszillator und verfahren zu seiner herstellung - Google Patents
Elektronischer festkoerper-oszillator und verfahren zu seiner herstellungInfo
- Publication number
- DE2716802A1 DE2716802A1 DE19772716802 DE2716802A DE2716802A1 DE 2716802 A1 DE2716802 A1 DE 2716802A1 DE 19772716802 DE19772716802 DE 19772716802 DE 2716802 A DE2716802 A DE 2716802A DE 2716802 A1 DE2716802 A1 DE 2716802A1
- Authority
- DE
- Germany
- Prior art keywords
- layer
- stage
- course
- doped silicon
- dielectric material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims description 19
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 19
- 229910052710 silicon Inorganic materials 0.000 claims description 19
- 239000010703 silicon Substances 0.000 claims description 19
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 18
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 17
- 239000004065 semiconductor Substances 0.000 claims description 16
- 229910052751 metal Inorganic materials 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 13
- 239000003989 dielectric material Substances 0.000 claims description 12
- 238000001465 metallisation Methods 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 10
- 230000000873 masking effect Effects 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 8
- 239000000126 substance Substances 0.000 claims description 7
- 230000002093 peripheral effect Effects 0.000 claims description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 239000011651 chromium Substances 0.000 claims description 3
- 229910052742 iron Inorganic materials 0.000 claims description 2
- 238000004070 electrodeposition Methods 0.000 claims 2
- 235000012431 wafers Nutrition 0.000 claims 1
- 239000011347 resin Substances 0.000 description 7
- 229920005989 resin Polymers 0.000 description 7
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 5
- 239000010931 gold Substances 0.000 description 5
- 229910052737 gold Inorganic materials 0.000 description 5
- 230000010355 oscillation Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000035939 shock Effects 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000007792 gaseous phase Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 238000010297 mechanical methods and process Methods 0.000 description 1
- 230000005226 mechanical processes and functions Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
- H10D8/01—Manufacture or treatment
- H10D8/055—Manufacture or treatment of transit-time diodes, e.g. IMPATT or TRAPATT diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/60—Capacitors
- H10D1/62—Capacitors having potential barriers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
- H10D8/01—Manufacture or treatment
- H10D8/043—Manufacture or treatment of planar diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
- H10D8/40—Transit-time diodes, e.g. IMPATT or TRAPATT diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
Landscapes
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7611444A FR2348578A1 (fr) | 1976-04-16 | 1976-04-16 | Oscillateur electronique a l'etat solide comportant un dispositif d'accord integre, et procede de fabrication d'un tel oscillateur |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2716802A1 true DE2716802A1 (de) | 1977-10-27 |
Family
ID=9171989
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19772716802 Pending DE2716802A1 (de) | 1976-04-16 | 1977-04-15 | Elektronischer festkoerper-oszillator und verfahren zu seiner herstellung |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPS534453A (cg-RX-API-DMAC7.html) |
| DE (1) | DE2716802A1 (cg-RX-API-DMAC7.html) |
| FR (1) | FR2348578A1 (cg-RX-API-DMAC7.html) |
| GB (1) | GB1539011A (cg-RX-API-DMAC7.html) |
-
1976
- 1976-04-16 FR FR7611444A patent/FR2348578A1/fr active Granted
-
1977
- 1977-04-13 GB GB15413/77A patent/GB1539011A/en not_active Expired
- 1977-04-14 JP JP4310877A patent/JPS534453A/ja active Pending
- 1977-04-15 DE DE19772716802 patent/DE2716802A1/de active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| GB1539011A (en) | 1979-01-24 |
| JPS534453A (en) | 1978-01-17 |
| FR2348578A1 (fr) | 1977-11-10 |
| FR2348578B1 (cg-RX-API-DMAC7.html) | 1978-08-25 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE69507284T2 (de) | Halbleiter mit einem träger auf dem ein substrat mit einem halbleiter-element mittels einer klebeschicht und ein leiterbahn-muster befestigt sind | |
| DE2212049C2 (de) | Verfahren zur Herstellung einer Halbleiteranordnung und Verfahren zur Herstellung eines Transistors | |
| DE69205640T2 (de) | Verfahren zur Herstellung eines Mikroelektronisches Bauelement. | |
| DE4002037A1 (de) | Kondensator und spannungsmultiplizierer unter verwendung des kondensators | |
| DE3043289C2 (cg-RX-API-DMAC7.html) | ||
| DE4223272A1 (de) | Halbleitervorrichtung und verfahren zu deren herstellung | |
| DE2646404A1 (de) | Verfahren zur herstellung von halbleitervorrichtungen mit hoher waermeleitfaehigkeit | |
| DE69524730T2 (de) | Verfahren zur Herstellung einer Halbleitervorrichtung für Mikrowellen | |
| DE2749607B2 (de) | Halbleiteranordnung und Verfahren zu deren Herstellung | |
| DE1764570C3 (de) | Verfahren zur Herstellung einer Halbleitervorrichtung mit zueinander komplementären NPN- und PNP-Transistoren | |
| DE4007604A1 (de) | Halbleiterbauelement und verfahren zu seiner herstellung | |
| DE1924712C3 (de) | Integrierter Dünnschicht-Abblockbzw. Entkopplungskondensator für monolithische Schaltungen und Verfahren zu seiner Herstellung | |
| DE2414142A1 (de) | Spannungsveraenderliche kondensatoranordnung | |
| DE2236510C3 (de) | Monolithisch integrierbare Speicherzelle | |
| DE2716802A1 (de) | Elektronischer festkoerper-oszillator und verfahren zu seiner herstellung | |
| DE2541651A1 (de) | Ladungsuebertragungsvorrichtung | |
| DE2507038C3 (de) | Inverser Planartransistor und Verfahren zu seiner Herstellung | |
| DE2133977C3 (de) | Halbleiterbauelement | |
| DE2737503A1 (de) | Feldeffekttransistor mit interdigitalstruktur und verfahren zu seiner herstellung | |
| DE4312324C2 (de) | Verfahren zum Bearbeiten eines Halbleiters zum Herstellen eines isolierten, mit Polysilicium ausgekleideten Hohlraums und Verfahren zum Herstellen eines Kondensators | |
| DE19606983C2 (de) | Leistungshalbleiterbauelement mit planarem Aufbau | |
| EP0883169A2 (de) | Verfahren zur Herstellung von einem Dünnschichttransistor | |
| DE102023131059B3 (de) | Verfahren zur Herstellung einer supraleitenden integrierten Schaltung | |
| DE1564136A1 (de) | Verfahren zum Herstellen von Halbleiterbauelementen | |
| DE2627307C3 (de) | Verfahren zum Herstellen einer Halbleiteranordnung |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OHN | Withdrawal |