DE2706031C2 - - Google Patents
Info
- Publication number
- DE2706031C2 DE2706031C2 DE19772706031 DE2706031A DE2706031C2 DE 2706031 C2 DE2706031 C2 DE 2706031C2 DE 19772706031 DE19772706031 DE 19772706031 DE 2706031 A DE2706031 A DE 2706031A DE 2706031 C2 DE2706031 C2 DE 2706031C2
- Authority
- DE
- Germany
- Prior art keywords
- zone
- anode
- emitter
- conductivity type
- integrated circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 15
- 239000000758 substrate Substances 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 4
- 238000002347 injection Methods 0.000 claims description 3
- 239000007924 injection Substances 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 2
- 238000000576 coating method Methods 0.000 claims description 2
- 230000004888 barrier function Effects 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 3
- 238000003780 insertion Methods 0.000 description 3
- 230000037431 insertion Effects 0.000 description 3
- 238000002955 isolation Methods 0.000 description 2
- 230000003321 amplification Effects 0.000 description 1
- 230000002457 bidirectional effect Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000013016 damping Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/0817—Thyristors only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/761—PN junctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/7436—Lateral thyristors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Thyristors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19772706031 DE2706031A1 (de) | 1977-02-12 | 1977-02-12 | Integrierte schaltung mit einem thyristor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19772706031 DE2706031A1 (de) | 1977-02-12 | 1977-02-12 | Integrierte schaltung mit einem thyristor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE2706031A1 DE2706031A1 (de) | 1978-08-17 |
| DE2706031C2 true DE2706031C2 (fr) | 1988-03-17 |
Family
ID=6001043
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19772706031 Granted DE2706031A1 (de) | 1977-02-12 | 1977-02-12 | Integrierte schaltung mit einem thyristor |
Country Status (1)
| Country | Link |
|---|---|
| DE (1) | DE2706031A1 (fr) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4567500A (en) * | 1981-12-01 | 1986-01-28 | Rca Corporation | Semiconductor structure for protecting integrated circuit devices |
| EP0144865B1 (fr) * | 1983-12-05 | 1991-06-26 | General Electric Company | Substrat semi-conducteur comportant un dispositif semi-conducteur électriquement isolé |
| CA1252225A (fr) * | 1985-11-27 | 1989-04-04 | Sel Colak | Transistor a grille isolee lateral a regions d'anode et de grille couplees |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3430110A (en) * | 1965-12-02 | 1969-02-25 | Rca Corp | Monolithic integrated circuits with a plurality of isolation zones |
| DE2026778C3 (de) * | 1970-06-01 | 1978-12-21 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Halbleitervierschichtdiode |
| US3725683A (en) * | 1971-02-03 | 1973-04-03 | Wescom | Discrete and integrated-type circuit |
| JPS49131388A (fr) * | 1973-04-18 | 1974-12-17 |
-
1977
- 1977-02-12 DE DE19772706031 patent/DE2706031A1/de active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| DE2706031A1 (de) | 1978-08-17 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8139 | Disposal/non-payment of the annual fee | ||
| 8170 | Reinstatement of the former position | ||
| 8110 | Request for examination paragraph 44 | ||
| 8125 | Change of the main classification |
Ipc: H01L 29/74 |
|
| 8127 | New person/name/address of the applicant |
Owner name: SIEMENS AG, 1000 BERLIN UND 8000 MUENCHEN, DE |
|
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |