DE2661096C2 - - Google Patents

Info

Publication number
DE2661096C2
DE2661096C2 DE2661096A DE2661096A DE2661096C2 DE 2661096 C2 DE2661096 C2 DE 2661096C2 DE 2661096 A DE2661096 A DE 2661096A DE 2661096 A DE2661096 A DE 2661096A DE 2661096 C2 DE2661096 C2 DE 2661096C2
Authority
DE
Germany
Prior art keywords
zone
zones
control electrode
junction
forward blocking
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE2661096A
Other languages
German (de)
English (en)
Inventor
Patrick De Dipl.-Ing. Siggenthal Ch Bruyne
Roland Dr. Umiken Ch Sittig
Wolfgang Dr. Klingnau Ch Zimmermann
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BBC Brown Boveri AG Switzerland
Original Assignee
BBC Brown Boveri AG Switzerland
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BBC Brown Boveri AG Switzerland filed Critical BBC Brown Boveri AG Switzerland
Application granted granted Critical
Publication of DE2661096C2 publication Critical patent/DE2661096C2/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/211—Thyristors having built-in localised breakdown or breakover regions, e.g. self-protected against destructive spontaneous firing

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thyristors (AREA)
DE2661096A 1976-06-02 1976-06-26 Expired DE2661096C2 (enrdf_load_stackoverflow)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH692976A CH594984A5 (enrdf_load_stackoverflow) 1976-06-02 1976-06-02

Publications (1)

Publication Number Publication Date
DE2661096C2 true DE2661096C2 (enrdf_load_stackoverflow) 1989-04-06

Family

ID=4317256

Family Applications (2)

Application Number Title Priority Date Filing Date
DE19762628793 Granted DE2628793A1 (de) 1976-06-02 1976-06-26 Thyristor
DE2661096A Expired DE2661096C2 (enrdf_load_stackoverflow) 1976-06-02 1976-06-26

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE19762628793 Granted DE2628793A1 (de) 1976-06-02 1976-06-26 Thyristor

Country Status (2)

Country Link
CH (1) CH594984A5 (enrdf_load_stackoverflow)
DE (2) DE2628793A1 (enrdf_load_stackoverflow)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH622127A5 (enrdf_load_stackoverflow) * 1977-12-21 1981-03-13 Bbc Brown Boveri & Cie
DE2853292A1 (de) * 1978-11-24 1980-06-12 Bbc Brown Boveri & Cie Optisch aktivierbares halbleiterbauelement
JPS63260078A (ja) * 1987-04-17 1988-10-27 Hitachi Ltd 過電圧自己保護型サイリスタ
JPH01136369A (ja) * 1987-11-21 1989-05-29 Toshiba Corp 過電圧保護機能付半導体装置の製造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2140993A1 (de) * 1971-08-16 1973-03-01 Siemens Ag Thyristor
DE2107566B2 (de) * 1970-02-24 1973-11-22 Allmaenna Svenska Elektriska Ab, Vaesteraas (Schweden) Thyristor

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2107566B2 (de) * 1970-02-24 1973-11-22 Allmaenna Svenska Elektriska Ab, Vaesteraas (Schweden) Thyristor
DE2140993A1 (de) * 1971-08-16 1973-03-01 Siemens Ag Thyristor

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
IEEE Transactions on Electron Devices, Vol. ED-22,Nr. 10, 1975, S. 910-916 *
Solid-State Electronics, 1974, Vol. 17, H. 7, S. 655-661 *

Also Published As

Publication number Publication date
CH594984A5 (enrdf_load_stackoverflow) 1978-01-31
DE2628793A1 (de) 1977-12-15
DE2628793C2 (enrdf_load_stackoverflow) 1988-06-16

Similar Documents

Publication Publication Date Title
DE69418409T2 (de) Vierschicht-Überspannungsschutzdiode
EP0200863B1 (de) Halbleiterbauelement mit Thyristor- und Diodenstrukturen
DE2154283C2 (de) Überspannungsschutzschaltung für ein in einer Hochspannungsstromrichteranlage betriebenes Thyristor-Stromrichterventil
DE69534509T2 (de) Zweipoliges Bauteil zur Überkopfzündung mit kontrollierter Empfindlichkeit
EP0572826B1 (de) Thyristor mit Durchbruchbereich
DE69233363T2 (de) Bipolarer Transistor vom isolierten Gatetyp mit Überspannungschutz
DE3631136C2 (enrdf_load_stackoverflow)
DE3240564A1 (de) Steuerbares halbleiterschaltelement
DE102005049506B4 (de) Vertikales Halbleiterbauelement
EP0049445B1 (de) Selbstzündender Thyristor
DE2661096C2 (enrdf_load_stackoverflow)
DE3787848T2 (de) Halbleiterdiode.
EP0430133B1 (de) Leistungs-Halbleiterbauelement mit Emitterkurzschlüssen
CH695033A5 (de) Diode.
EP0700095B1 (de) Abschaltbarer Thyristor für hohe Blockierspannungen und kleiner Bauelementdicke
EP0902979B1 (de) Thyristor mit integriertem du/dt-schutz
DE2238564A1 (de) Thyristor
DE19947028A1 (de) Thyristor mit Spannungsstoßbelastbarkeit in der Freiwerdezeit
DE69126316T2 (de) Thyristorstruktur mit schnellem abschalten
DE3405549A1 (de) Ueberspannungsgeschuetzter thyristor und verfahren zu seiner herstellung
DE2425364A1 (de) Gate-gesteuerter halbleitergleichrichter
DE2607194A1 (de) Halbleiteranordnung
DE2628792C2 (de) Lichtzündbarer Thyristor
DE19947036C1 (de) Thyristoranordnung mit Freiwerdeschutz
DE102008054094B4 (de) Halbleiterbauelement mit einer integrierten Widerstandsstruktur

Legal Events

Date Code Title Description
Q172 Divided out of (supplement):

Ref country code: DE

Ref document number: 2628793

8110 Request for examination paragraph 44
8181 Inventor (new situation)

Free format text: BRUYNE, PATRICK DE, DIPL.-ING., SIGGENTHAL, CH SITTIG, ROLAND, DR., UMIKEN, CH ZIMMERMANN, WOLFGANG, DR., KLINGNAU, CH

8127 New person/name/address of the applicant

Owner name: BBC BROWN BOVERI AG, BADEN, AARGAU, CH

8128 New person/name/address of the agent

Representative=s name: DERZEIT KEIN VERTRETER BESTELLT

AC Divided out of

Ref country code: DE

Ref document number: 2628793

Format of ref document f/p: P

8128 New person/name/address of the agent

Representative=s name: RUPPRECHT, K., DIPL.-ING., PAT.-ANW., 6242 KRONBER

AC Divided out of

Ref country code: DE

Ref document number: 2628793

Format of ref document f/p: P

D2 Grant after examination
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee