DE2659221A1 - Integrierte halbleiterschaltung - Google Patents
Integrierte halbleiterschaltungInfo
- Publication number
- DE2659221A1 DE2659221A1 DE19762659221 DE2659221A DE2659221A1 DE 2659221 A1 DE2659221 A1 DE 2659221A1 DE 19762659221 DE19762659221 DE 19762659221 DE 2659221 A DE2659221 A DE 2659221A DE 2659221 A1 DE2659221 A1 DE 2659221A1
- Authority
- DE
- Germany
- Prior art keywords
- circuit
- signal
- output
- output signal
- logic circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
- H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
- H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
- H03K19/096—Synchronous circuits, i.e. using clock signals
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
- G11C17/10—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM
- G11C17/12—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
- H03K3/356—Bistable circuits
- H03K3/356008—Bistable circuits ensuring a predetermined initial state when the supply voltage has been applied; storing the actual state when the supply voltage fails
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
- H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
- H10D84/85—Complementary IGFETs, e.g. CMOS
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Computing Systems (AREA)
- General Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Logic Circuits (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP152976A JPS5285487A (en) | 1976-01-09 | 1976-01-09 | Semiconductor integrated circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2659221A1 true DE2659221A1 (de) | 1977-07-21 |
Family
ID=11504033
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19762659221 Pending DE2659221A1 (de) | 1976-01-09 | 1976-12-28 | Integrierte halbleiterschaltung |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JPS5285487A (enrdf_load_stackoverflow) |
| CH (1) | CH604372A5 (enrdf_load_stackoverflow) |
| DE (1) | DE2659221A1 (enrdf_load_stackoverflow) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0093606A1 (en) * | 1982-04-30 | 1983-11-09 | Fujitsu Limited | Voltage level detecting circuitry |
| US4707625A (en) * | 1984-03-26 | 1987-11-17 | Hitachi, Ltd. | Semiconductor integrated circuit device formed with a CMOS circuit and a boatstrap capacitor |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01178068U (enrdf_load_stackoverflow) * | 1988-06-02 | 1989-12-20 |
-
1976
- 1976-01-09 JP JP152976A patent/JPS5285487A/ja active Granted
- 1976-12-28 DE DE19762659221 patent/DE2659221A1/de active Pending
-
1977
- 1977-01-04 CH CH2677A patent/CH604372A5/xx not_active IP Right Cessation
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0093606A1 (en) * | 1982-04-30 | 1983-11-09 | Fujitsu Limited | Voltage level detecting circuitry |
| US4709165A (en) * | 1982-04-30 | 1987-11-24 | Fujitsu Limited | Voltage supply level detecting circuit |
| US4707625A (en) * | 1984-03-26 | 1987-11-17 | Hitachi, Ltd. | Semiconductor integrated circuit device formed with a CMOS circuit and a boatstrap capacitor |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6134260B2 (enrdf_load_stackoverflow) | 1986-08-06 |
| CH604372A5 (enrdf_load_stackoverflow) | 1978-09-15 |
| JPS5285487A (en) | 1977-07-15 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OHW | Rejection |