DE2659041A1 - Verfahren zum aetzen von al tief 2 o tief 3 - Google Patents
Verfahren zum aetzen von al tief 2 o tief 3Info
- Publication number
- DE2659041A1 DE2659041A1 DE19762659041 DE2659041A DE2659041A1 DE 2659041 A1 DE2659041 A1 DE 2659041A1 DE 19762659041 DE19762659041 DE 19762659041 DE 2659041 A DE2659041 A DE 2659041A DE 2659041 A1 DE2659041 A1 DE 2659041A1
- Authority
- DE
- Germany
- Prior art keywords
- etching
- sapphire
- etched
- aln film
- etchant
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000005530 etching Methods 0.000 title claims description 61
- 238000000034 method Methods 0.000 title claims description 48
- 229910052594 sapphire Inorganic materials 0.000 claims description 87
- 239000010980 sapphire Substances 0.000 claims description 87
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 29
- 229910052782 aluminium Inorganic materials 0.000 claims description 24
- 238000010438 heat treatment Methods 0.000 claims description 18
- 238000000151 deposition Methods 0.000 claims description 10
- 230000008021 deposition Effects 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims description 6
- 229910020068 MgAl Inorganic materials 0.000 claims description 5
- 229910052739 hydrogen Inorganic materials 0.000 claims description 5
- 230000007935 neutral effect Effects 0.000 claims description 5
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 3
- 239000010408 film Substances 0.000 description 25
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 15
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 12
- 239000007789 gas Substances 0.000 description 11
- 230000000694 effects Effects 0.000 description 7
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 5
- 229910052721 tungsten Inorganic materials 0.000 description 5
- 239000010937 tungsten Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000005498 polishing Methods 0.000 description 4
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 229910017604 nitric acid Inorganic materials 0.000 description 3
- 229910052596 spinel Inorganic materials 0.000 description 3
- 239000011029 spinel Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 238000009835 boiling Methods 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000007524 flame polishing Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000009966 trimming Methods 0.000 description 2
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000003723 Smelting Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910021538 borax Inorganic materials 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 239000003518 caustics Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- -1 helium difluorodichloromethane Chemical compound 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 239000011819 refractory material Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000004328 sodium tetraborate Substances 0.000 description 1
- 235000010339 sodium tetraborate Nutrition 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titanium dioxide Inorganic materials O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/009—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/53—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone involving the removal of at least part of the materials of the treated article, e.g. etching, drying of hardened concrete
- C04B41/5338—Etching
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
- C04B41/91—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics involving the removal of part of the materials of the treated articles, e.g. etching
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
- G01D15/00—Component parts of recorders for measuring arrangements not specially adapted for a specific variable
- G01D15/16—Recording elements transferring recording material, e.g. ink, to the recording surface
- G01D15/18—Nozzles emitting recording material
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/051—Etching
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/113—Nitrides of boron or aluminum or gallium
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/15—Silicon on sapphire SOS
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Structural Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Compounds Of Alkaline-Earth Elements, Aluminum Or Rare-Earth Metals (AREA)
- ing And Chemical Polishing (AREA)
- Production Of Multi-Layered Print Wiring Board (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/645,740 US4008111A (en) | 1975-12-31 | 1975-12-31 | AlN masking for selective etching of sapphire |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2659041A1 true DE2659041A1 (de) | 1977-07-14 |
Family
ID=24590278
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19762659041 Withdrawn DE2659041A1 (de) | 1975-12-31 | 1976-12-27 | Verfahren zum aetzen von al tief 2 o tief 3 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US4008111A (enExample) |
| JP (1) | JPS5285098A (enExample) |
| CA (1) | CA1065746A (enExample) |
| DE (1) | DE2659041A1 (enExample) |
| FR (1) | FR2337115A1 (enExample) |
| GB (1) | GB1555037A (enExample) |
| IT (1) | IT1123675B (enExample) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4052251A (en) * | 1976-03-02 | 1977-10-04 | Rca Corporation | Method of etching sapphire utilizing sulfur hexafluoride |
| US4106975A (en) * | 1977-06-30 | 1978-08-15 | International Business Machines Corporation | Process for etching holes |
| US4132586A (en) * | 1977-12-20 | 1979-01-02 | International Business Machines Corporation | Selective dry etching of substrates |
| US4152182A (en) * | 1978-05-15 | 1979-05-01 | International Business Machines Corporation | Process for producing electronic grade aluminum nitride films utilizing the reduction of aluminum oxide |
| US4318026A (en) * | 1980-04-30 | 1982-03-02 | Rca Corporation | Method of making a grid for a cathode-ray tube electron gun |
| US4357202A (en) * | 1981-06-12 | 1982-11-02 | International Business Machines Corporation | Refractory oxide fabrication |
| JPS6019835A (ja) * | 1983-07-15 | 1985-02-01 | Kubota Ltd | 走行式沈砂掻揚機 |
| US5901425A (en) * | 1996-08-27 | 1999-05-11 | Topaz Technologies Inc. | Inkjet print head apparatus |
| US6451216B1 (en) * | 1997-07-15 | 2002-09-17 | Silverbrook Research Pty Ltd | Method of manufacture of a thermal actuated ink jet printer |
| US6555891B1 (en) | 2000-10-17 | 2003-04-29 | International Business Machines Corporation | SOI hybrid structure with selective epitaxial growth of silicon |
| FR2859488B1 (fr) * | 2003-09-10 | 2006-02-17 | Centre Nat Rech Scient | Procede de fabrication d'au moins une cavite dans un materiau |
| US10052848B2 (en) | 2012-03-06 | 2018-08-21 | Apple Inc. | Sapphire laminates |
| US9221289B2 (en) | 2012-07-27 | 2015-12-29 | Apple Inc. | Sapphire window |
| US9232672B2 (en) | 2013-01-10 | 2016-01-05 | Apple Inc. | Ceramic insert control mechanism |
| US9632537B2 (en) | 2013-09-23 | 2017-04-25 | Apple Inc. | Electronic component embedded in ceramic material |
| US9678540B2 (en) | 2013-09-23 | 2017-06-13 | Apple Inc. | Electronic component embedded in ceramic material |
| US9154678B2 (en) | 2013-12-11 | 2015-10-06 | Apple Inc. | Cover glass arrangement for an electronic device |
| US9225056B2 (en) | 2014-02-12 | 2015-12-29 | Apple Inc. | Antenna on sapphire structure |
| US10406634B2 (en) | 2015-07-01 | 2019-09-10 | Apple Inc. | Enhancing strength in laser cutting of ceramic components |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3743552A (en) * | 1970-01-30 | 1973-07-03 | North American Rockwell | Process for coplanar semiconductor structure |
| US3753775A (en) * | 1971-03-01 | 1973-08-21 | Rca Corp | Chemical polishing of sapphire |
| JPS4995592A (enExample) * | 1973-01-12 | 1974-09-10 | ||
| US3899363A (en) * | 1974-06-28 | 1975-08-12 | Ibm | Method and device for reducing sidewall conduction in recessed oxide pet arrays |
-
1975
- 1975-12-31 US US05/645,740 patent/US4008111A/en not_active Expired - Lifetime
-
1976
- 1976-11-11 GB GB47053/76A patent/GB1555037A/en not_active Expired
- 1976-11-29 FR FR7636404A patent/FR2337115A1/fr active Granted
- 1976-12-03 IT IT30072/76A patent/IT1123675B/it active
- 1976-12-09 JP JP14722176A patent/JPS5285098A/ja active Granted
- 1976-12-27 DE DE19762659041 patent/DE2659041A1/de not_active Withdrawn
- 1976-12-29 CA CA268,799A patent/CA1065746A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| US4008111A (en) | 1977-02-15 |
| GB1555037A (en) | 1979-11-07 |
| JPS5614611B2 (enExample) | 1981-04-06 |
| FR2337115B1 (enExample) | 1980-10-17 |
| IT1123675B (it) | 1986-04-30 |
| FR2337115A1 (fr) | 1977-07-29 |
| CA1065746A (en) | 1979-11-06 |
| JPS5285098A (en) | 1977-07-15 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8141 | Disposal/no request for examination |