DE2640518A1 - Monolithisches elektrolumineszierendes halbleitergebilde - Google Patents
Monolithisches elektrolumineszierendes halbleitergebildeInfo
- Publication number
- DE2640518A1 DE2640518A1 DE19762640518 DE2640518A DE2640518A1 DE 2640518 A1 DE2640518 A1 DE 2640518A1 DE 19762640518 DE19762640518 DE 19762640518 DE 2640518 A DE2640518 A DE 2640518A DE 2640518 A1 DE2640518 A1 DE 2640518A1
- Authority
- DE
- Germany
- Prior art keywords
- layer
- semiconductor structure
- structure according
- sub
- monolithic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 239000004065 semiconductor Substances 0.000 title claims description 57
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 36
- 239000012535 impurity Substances 0.000 claims description 29
- 230000007704 transition Effects 0.000 claims description 26
- 239000000758 substrate Substances 0.000 claims description 23
- 229910052757 nitrogen Inorganic materials 0.000 claims description 19
- 230000005855 radiation Effects 0.000 claims description 19
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 18
- 238000004519 manufacturing process Methods 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 12
- 229910005540 GaP Inorganic materials 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 11
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 claims description 10
- 229910021529 ammonia Inorganic materials 0.000 claims description 8
- 150000001875 compounds Chemical class 0.000 claims description 8
- 238000009792 diffusion process Methods 0.000 claims description 7
- 239000001257 hydrogen Substances 0.000 claims description 7
- 229910052739 hydrogen Inorganic materials 0.000 claims description 7
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 6
- 239000007789 gas Substances 0.000 claims description 6
- 230000008569 process Effects 0.000 claims description 6
- 230000008021 deposition Effects 0.000 claims description 5
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 claims description 4
- 230000007423 decrease Effects 0.000 claims description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 2
- 229910052733 gallium Inorganic materials 0.000 claims description 2
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 claims description 2
- 229910000041 hydrogen chloride Inorganic materials 0.000 claims description 2
- 229910000073 phosphorus hydride Inorganic materials 0.000 claims description 2
- 239000002800 charge carrier Substances 0.000 claims 1
- ILXWFJOFKUNZJA-UHFFFAOYSA-N ethyltellanylethane Chemical compound CC[Te]CC ILXWFJOFKUNZJA-UHFFFAOYSA-N 0.000 claims 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims 1
- 239000012808 vapor phase Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 description 97
- 125000004429 atom Chemical group 0.000 description 5
- 230000008901 benefit Effects 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 229910052714 tellurium Inorganic materials 0.000 description 5
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 5
- 238000010521 absorption reaction Methods 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 230000002349 favourable effect Effects 0.000 description 4
- PLXMOAALOJOTIY-FPTXNFDTSA-N Aesculin Natural products OC[C@@H]1[C@@H](O)[C@H](O)[C@@H](O)[C@H](O)[C@H]1Oc2cc3C=CC(=O)Oc3cc2O PLXMOAALOJOTIY-FPTXNFDTSA-N 0.000 description 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 3
- 229910052725 zinc Inorganic materials 0.000 description 3
- 239000011701 zinc Substances 0.000 description 3
- 239000012790 adhesive layer Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 238000005755 formation reaction Methods 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 239000007791 liquid phase Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000035699 permeability Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 101150114464 ATRN gene Proteins 0.000 description 1
- 229910000952 Be alloy Inorganic materials 0.000 description 1
- 229910000676 Si alloy Inorganic materials 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 241001122767 Theaceae Species 0.000 description 1
- OFLYIWITHZJFLS-UHFFFAOYSA-N [Si].[Au] Chemical compound [Si].[Au] OFLYIWITHZJFLS-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- -1 compound gallium phosphide Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 239000003085 diluting agent Substances 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000000295 emission spectrum Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000006187 pill Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
- H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
- H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
- H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
Landscapes
- Led Devices (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7528632A FR2325195A1 (fr) | 1975-09-18 | 1975-09-18 | Ensemble monolithique semiconducteur electroluminescent |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2640518A1 true DE2640518A1 (de) | 1977-03-31 |
Family
ID=9160145
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19762640518 Ceased DE2640518A1 (de) | 1975-09-18 | 1976-09-09 | Monolithisches elektrolumineszierendes halbleitergebilde |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US4303931A (enExample) |
| JP (1) | JPS5236989A (enExample) |
| AU (1) | AU507498B2 (enExample) |
| CA (1) | CA1073548A (enExample) |
| DE (1) | DE2640518A1 (enExample) |
| FR (1) | FR2325195A1 (enExample) |
| GB (1) | GB1531897A (enExample) |
| IT (1) | IT1070711B (enExample) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4577207A (en) * | 1982-12-30 | 1986-03-18 | At&T Bell Laboratories | Dual wavelength optical source |
| US4724356A (en) * | 1986-10-10 | 1988-02-09 | Lockheed Missiles & Space Co., Inc. | Infrared display device |
| JP2737563B2 (ja) * | 1992-08-18 | 1998-04-08 | 三菱電機株式会社 | 半導体発光装置 |
| DE69425383T2 (de) * | 1994-10-11 | 2001-02-15 | International Business Machines Corp., Armonk | Monoelektrische anordnung von lichtemittierenden dioden zur lichterzeugung mehrerer wellenlängen und deren anwendung für mehrfarben-anzeigevorrichtungen |
| US6777982B2 (en) * | 2001-04-03 | 2004-08-17 | Carnegie Mellon University | Molecular scale latch and associated clocking scheme to provide gain, memory and I/O isolation |
| JP2008016413A (ja) * | 2006-07-10 | 2008-01-24 | Canon Inc | 配線基板の製造方法、電子源の製造方法、画像表示装置の製造方法、画像再生装置 |
| CN107924513A (zh) * | 2015-04-14 | 2018-04-17 | 第资本服务公司 | 用于动态交易卡的系统、方法和设备 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2079612A5 (enExample) * | 1970-02-06 | 1971-11-12 | Radiotechnique Compelec | |
| US3964940A (en) * | 1971-09-10 | 1976-06-22 | Plessey Handel Und Investments A.G. | Methods of producing gallium phosphide yellow light emitting diodes |
| US3846193A (en) * | 1972-06-22 | 1974-11-05 | Ibm | Minimizing cross-talk in l.e.d.arrays |
| JPS4945040A (enExample) * | 1972-09-08 | 1974-04-27 | ||
| US4001056A (en) * | 1972-12-08 | 1977-01-04 | Monsanto Company | Epitaxial deposition of iii-v compounds containing isoelectronic impurities |
| US3947840A (en) * | 1974-08-16 | 1976-03-30 | Monsanto Company | Integrated semiconductor light-emitting display array |
-
1975
- 1975-09-18 FR FR7528632A patent/FR2325195A1/fr active Granted
-
1976
- 1976-09-09 DE DE19762640518 patent/DE2640518A1/de not_active Ceased
- 1976-09-13 CA CA261,105A patent/CA1073548A/en not_active Expired
- 1976-09-15 AU AU17737/76A patent/AU507498B2/en not_active Expired
- 1976-09-15 IT IT27215/76A patent/IT1070711B/it active
- 1976-09-15 GB GB38201/76A patent/GB1531897A/en not_active Expired
- 1976-09-17 JP JP11088576A patent/JPS5236989A/ja active Pending
-
1979
- 1979-09-27 US US06/079,604 patent/US4303931A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| IT1070711B (it) | 1985-04-02 |
| GB1531897A (en) | 1978-11-08 |
| FR2325195A1 (fr) | 1977-04-15 |
| CA1073548A (en) | 1980-03-11 |
| FR2325195B1 (enExample) | 1980-04-11 |
| JPS5236989A (en) | 1977-03-22 |
| US4303931A (en) | 1981-12-01 |
| AU1773776A (en) | 1978-03-23 |
| AU507498B2 (en) | 1980-02-14 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OD | Request for examination | ||
| 8128 | New person/name/address of the agent |
Representative=s name: NEHMZOW, F., PAT.-ASS., 2000 HAMBURG |
|
| 8131 | Rejection |