DE2628820C2 - Ladungsgekoppelter Halbleiter-Bildaufnehmer - Google Patents
Ladungsgekoppelter Halbleiter-BildaufnehmerInfo
- Publication number
- DE2628820C2 DE2628820C2 DE2628820A DE2628820A DE2628820C2 DE 2628820 C2 DE2628820 C2 DE 2628820C2 DE 2628820 A DE2628820 A DE 2628820A DE 2628820 A DE2628820 A DE 2628820A DE 2628820 C2 DE2628820 C2 DE 2628820C2
- Authority
- DE
- Germany
- Prior art keywords
- electrodes
- semiconductor
- charge
- zone
- semiconductor substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 55
- 239000000758 substrate Substances 0.000 claims description 22
- 239000007787 solid Substances 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 10
- 230000000694 effects Effects 0.000 description 7
- 239000002800 charge carrier Substances 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 5
- 238000005468 ion implantation Methods 0.000 description 4
- 238000001514 detection method Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 230000000284 resting effect Effects 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000000819 phase cycle Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000000191 radiation effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/15—Charge-coupled device [CCD] image sensors
- H10F39/158—Charge-coupled device [CCD] image sensors having arrangements for blooming suppression
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D44/00—Charge transfer devices
- H10D44/40—Charge-coupled devices [CCD]
- H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes
- H10D44/462—Buried-channel CCD
- H10D44/468—Four-phase CCD
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
- H10D62/213—Channel regions of field-effect devices
- H10D62/335—Channel regions of field-effect devices of charge-coupled devices
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/594,892 US3996600A (en) | 1975-07-10 | 1975-07-10 | Charge coupled optical scanner with blooming control |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE2628820A1 DE2628820A1 (de) | 1977-01-27 |
| DE2628820C2 true DE2628820C2 (de) | 1983-11-17 |
Family
ID=24380851
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2628820A Expired DE2628820C2 (de) | 1975-07-10 | 1976-06-26 | Ladungsgekoppelter Halbleiter-Bildaufnehmer |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US3996600A (enExample) |
| JP (1) | JPS5211715A (enExample) |
| CA (1) | CA1037600A (enExample) |
| DE (1) | DE2628820C2 (enExample) |
| FR (1) | FR2317772A1 (enExample) |
| GB (1) | GB1547260A (enExample) |
| IT (1) | IT1063308B (enExample) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2527657C3 (de) * | 1975-06-20 | 1979-08-23 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Optoelektronischer Sensor und Verfahren zu seinem Betrieb |
| GB1595253A (en) * | 1977-01-24 | 1981-08-12 | Hitachi Ltd | Solid-state imaging devices |
| JPS55163882A (en) * | 1979-06-06 | 1980-12-20 | Nec Corp | System for driving charge transfer element |
| US4829354A (en) * | 1980-12-04 | 1989-05-09 | Westinghouse Electric Corp. | Drift field switch |
| US4398211A (en) * | 1981-01-07 | 1983-08-09 | Young Ian T | Solid state optical microscope |
| JPS5831670A (ja) * | 1981-08-20 | 1983-02-24 | Matsushita Electric Ind Co Ltd | 固体撮像装置 |
| DE3501138A1 (de) * | 1984-01-18 | 1985-07-18 | Canon K.K., Tokio/Tokyo | Bildaufnahmevorrichtung |
| JPH0681280B2 (ja) * | 1984-06-06 | 1994-10-12 | 日本電気株式会社 | 電荷結合素子の駆動法 |
| JPS61146900A (ja) * | 1984-12-17 | 1986-07-04 | 三井東圧化学株式会社 | 印刷用紙の製造方法 |
| US4743778A (en) * | 1985-03-25 | 1988-05-10 | Nippon Kogaku K. K. | Solid-state area imaging device having interline transfer CCD |
| US4794453A (en) * | 1986-09-09 | 1988-12-27 | Web Printing Controls Co. | Method and apparatus for stroboscopic video inspection of an asynchronous event |
| US4873561A (en) * | 1988-04-19 | 1989-10-10 | Wen David D | High dynamic range charge-coupled device |
| US4967249A (en) * | 1989-03-17 | 1990-10-30 | Loral Fairchild Corporation | Gain compression photodetector array |
| US4958207A (en) * | 1989-03-17 | 1990-09-18 | Loral Fairchild Corporation | Floating diode gain compression |
| US5055667A (en) * | 1990-06-21 | 1991-10-08 | Loral Fairchild Corporation | Non-linear photosite response in CCD imagers |
| KR101448152B1 (ko) * | 2008-03-26 | 2014-10-07 | 삼성전자주식회사 | 수직 포토게이트를 구비한 거리측정 센서 및 그를 구비한입체 컬러 이미지 센서 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3863065A (en) * | 1972-10-02 | 1975-01-28 | Rca Corp | Dynamic control of blooming in charge coupled, image-sensing arrays |
| NL7301041A (enExample) * | 1973-01-25 | 1974-07-29 | ||
| US3852799A (en) * | 1973-04-27 | 1974-12-03 | Bell Telephone Labor Inc | Buried channel charge coupled apparatus |
| US3896485A (en) * | 1973-12-03 | 1975-07-22 | Fairchild Camera Instr Co | Charge-coupled device with overflow protection |
| US3931465A (en) * | 1975-01-13 | 1976-01-06 | Rca Corporation | Blooming control for charge coupled imager |
-
1975
- 1975-07-10 US US05/594,892 patent/US3996600A/en not_active Expired - Lifetime
-
1976
- 1976-06-09 FR FR7618347A patent/FR2317772A1/fr active Granted
- 1976-06-15 GB GB24802/76A patent/GB1547260A/en not_active Expired
- 1976-06-16 IT IT24366/76A patent/IT1063308B/it active
- 1976-06-26 DE DE2628820A patent/DE2628820C2/de not_active Expired
- 1976-06-29 CA CA255,964A patent/CA1037600A/en not_active Expired
- 1976-07-09 JP JP51081065A patent/JPS5211715A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5527502B2 (enExample) | 1980-07-21 |
| DE2628820A1 (de) | 1977-01-27 |
| FR2317772B1 (enExample) | 1979-04-06 |
| US3996600A (en) | 1976-12-07 |
| JPS5211715A (en) | 1977-01-28 |
| CA1037600A (en) | 1978-08-29 |
| FR2317772A1 (fr) | 1977-02-04 |
| IT1063308B (it) | 1985-02-11 |
| GB1547260A (en) | 1979-06-06 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OD | Request for examination | ||
| 8125 | Change of the main classification |
Ipc: H04N 3/15 |
|
| 8126 | Change of the secondary classification |
Ipc: ENTFAELLT |
|
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |