IT1063308B - Dispositivo di scansione ottico perfezionato - Google Patents

Dispositivo di scansione ottico perfezionato

Info

Publication number
IT1063308B
IT1063308B IT24366/76A IT2436676A IT1063308B IT 1063308 B IT1063308 B IT 1063308B IT 24366/76 A IT24366/76 A IT 24366/76A IT 2436676 A IT2436676 A IT 2436676A IT 1063308 B IT1063308 B IT 1063308B
Authority
IT
Italy
Prior art keywords
scanning device
optical scanning
perfected
perfected optical
scanning
Prior art date
Application number
IT24366/76A
Other languages
English (en)
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Application granted granted Critical
Publication of IT1063308B publication Critical patent/IT1063308B/it

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10Integrated devices
    • H10F39/12Image sensors
    • H10F39/15Charge-coupled device [CCD] image sensors
    • H10F39/158Charge-coupled device [CCD] image sensors having arrangements for blooming suppression
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00Charge transfer devices
    • H10D44/40Charge-coupled devices [CCD]
    • H10D44/45Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes 
    • H10D44/462Buried-channel CCD
    • H10D44/468Four-phase CCD
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213Channel regions of field-effect devices
    • H10D62/335Channel regions of field-effect devices of charge-coupled devices
IT24366/76A 1975-07-10 1976-06-16 Dispositivo di scansione ottico perfezionato IT1063308B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/594,892 US3996600A (en) 1975-07-10 1975-07-10 Charge coupled optical scanner with blooming control

Publications (1)

Publication Number Publication Date
IT1063308B true IT1063308B (it) 1985-02-11

Family

ID=24380851

Family Applications (1)

Application Number Title Priority Date Filing Date
IT24366/76A IT1063308B (it) 1975-07-10 1976-06-16 Dispositivo di scansione ottico perfezionato

Country Status (7)

Country Link
US (1) US3996600A (it)
JP (1) JPS5211715A (it)
CA (1) CA1037600A (it)
DE (1) DE2628820C2 (it)
FR (1) FR2317772A1 (it)
GB (1) GB1547260A (it)
IT (1) IT1063308B (it)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2527657C3 (de) * 1975-06-20 1979-08-23 Siemens Ag, 1000 Berlin Und 8000 Muenchen Optoelektronischer Sensor und Verfahren zu seinem Betrieb
GB1595253A (en) * 1977-01-24 1981-08-12 Hitachi Ltd Solid-state imaging devices
JPS55163882A (en) * 1979-06-06 1980-12-20 Nec Corp System for driving charge transfer element
US4829354A (en) * 1980-12-04 1989-05-09 Westinghouse Electric Corp. Drift field switch
US4398211A (en) * 1981-01-07 1983-08-09 Young Ian T Solid state optical microscope
JPS5831670A (ja) * 1981-08-20 1983-02-24 Matsushita Electric Ind Co Ltd 固体撮像装置
DE3501138A1 (de) * 1984-01-18 1985-07-18 Canon K.K., Tokio/Tokyo Bildaufnahmevorrichtung
JPH0681280B2 (ja) * 1984-06-06 1994-10-12 日本電気株式会社 電荷結合素子の駆動法
JPS61146900A (ja) * 1984-12-17 1986-07-04 三井東圧化学株式会社 印刷用紙の製造方法
US4743778A (en) * 1985-03-25 1988-05-10 Nippon Kogaku K. K. Solid-state area imaging device having interline transfer CCD
US4794453A (en) * 1986-09-09 1988-12-27 Web Printing Controls Co. Method and apparatus for stroboscopic video inspection of an asynchronous event
US4873561A (en) * 1988-04-19 1989-10-10 Wen David D High dynamic range charge-coupled device
US4967249A (en) * 1989-03-17 1990-10-30 Loral Fairchild Corporation Gain compression photodetector array
US4958207A (en) * 1989-03-17 1990-09-18 Loral Fairchild Corporation Floating diode gain compression
US5055667A (en) * 1990-06-21 1991-10-08 Loral Fairchild Corporation Non-linear photosite response in CCD imagers
KR101448152B1 (ko) * 2008-03-26 2014-10-07 삼성전자주식회사 수직 포토게이트를 구비한 거리측정 센서 및 그를 구비한입체 컬러 이미지 센서

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3863065A (en) * 1972-10-02 1975-01-28 Rca Corp Dynamic control of blooming in charge coupled, image-sensing arrays
NL7301041A (it) * 1973-01-25 1974-07-29
US3852799A (en) * 1973-04-27 1974-12-03 Bell Telephone Labor Inc Buried channel charge coupled apparatus
US3896485A (en) * 1973-12-03 1975-07-22 Fairchild Camera Instr Co Charge-coupled device with overflow protection
US3931465A (en) * 1975-01-13 1976-01-06 Rca Corporation Blooming control for charge coupled imager

Also Published As

Publication number Publication date
JPS5211715A (en) 1977-01-28
US3996600A (en) 1976-12-07
GB1547260A (en) 1979-06-06
JPS5527502B2 (it) 1980-07-21
FR2317772A1 (fr) 1977-02-04
DE2628820C2 (de) 1983-11-17
CA1037600A (en) 1978-08-29
FR2317772B1 (it) 1979-04-06
DE2628820A1 (de) 1977-01-27

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