DE2628793A1 - Thyristor - Google Patents

Thyristor

Info

Publication number
DE2628793A1
DE2628793A1 DE19762628793 DE2628793A DE2628793A1 DE 2628793 A1 DE2628793 A1 DE 2628793A1 DE 19762628793 DE19762628793 DE 19762628793 DE 2628793 A DE2628793 A DE 2628793A DE 2628793 A1 DE2628793 A1 DE 2628793A1
Authority
DE
Germany
Prior art keywords
zone
control electrode
junction
thyristor
diffusion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE19762628793
Other languages
German (de)
English (en)
Other versions
DE2628793C2 (enrdf_load_stackoverflow
Inventor
Patrick De Dipl Ing Bruyne
Roland Dr Sittig
Wolfgang Dr Zimmermann
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BBC Brown Boveri AG Switzerland
Original Assignee
BBC BROWN BOVERI and CIE
BBC Brown Boveri AG Switzerland
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BBC BROWN BOVERI and CIE, BBC Brown Boveri AG Switzerland filed Critical BBC BROWN BOVERI and CIE
Publication of DE2628793A1 publication Critical patent/DE2628793A1/de
Application granted granted Critical
Publication of DE2628793C2 publication Critical patent/DE2628793C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/211—Thyristors having built-in localised breakdown or breakover regions, e.g. self-protected against destructive spontaneous firing

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thyristors (AREA)
DE19762628793 1976-06-02 1976-06-26 Thyristor Granted DE2628793A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH692976A CH594984A5 (enrdf_load_stackoverflow) 1976-06-02 1976-06-02

Publications (2)

Publication Number Publication Date
DE2628793A1 true DE2628793A1 (de) 1977-12-15
DE2628793C2 DE2628793C2 (enrdf_load_stackoverflow) 1988-06-16

Family

ID=4317256

Family Applications (2)

Application Number Title Priority Date Filing Date
DE19762628793 Granted DE2628793A1 (de) 1976-06-02 1976-06-26 Thyristor
DE2661096A Expired DE2661096C2 (enrdf_load_stackoverflow) 1976-06-02 1976-06-26

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE2661096A Expired DE2661096C2 (enrdf_load_stackoverflow) 1976-06-02 1976-06-26

Country Status (2)

Country Link
CH (1) CH594984A5 (enrdf_load_stackoverflow)
DE (2) DE2628793A1 (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0002840A1 (de) * 1977-12-21 1979-07-11 BBC Aktiengesellschaft Brown, Boveri & Cie. Kathodenseitig steuerbarer Thyristor mit einer Anodenzone aus zwei aneinandergrenzenden Bereichen mit unterschiedlicher Leitfähigkeit
EP0287114A1 (en) * 1987-04-17 1988-10-19 Hitachi, Ltd. Thyristor of overvoltage self-protection type
EP0317915A3 (en) * 1987-11-21 1990-04-11 Kabushiki Kaisha Toshiba Method of manufacturing semiconductor device with overvoltage self-protection

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2853292A1 (de) * 1978-11-24 1980-06-12 Bbc Brown Boveri & Cie Optisch aktivierbares halbleiterbauelement

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2140993A1 (de) * 1971-08-16 1973-03-01 Siemens Ag Thyristor
DE2107566B2 (de) * 1970-02-24 1973-11-22 Allmaenna Svenska Elektriska Ab, Vaesteraas (Schweden) Thyristor

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2107566B2 (de) * 1970-02-24 1973-11-22 Allmaenna Svenska Elektriska Ab, Vaesteraas (Schweden) Thyristor
DE2140993A1 (de) * 1971-08-16 1973-03-01 Siemens Ag Thyristor

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
IEEE Transactions on Electron Devices, Vol. ED-22, Nr. 10, 1975, S. 910-916
Solid-State Electronics, 1974, Vol. 17, H. 7, S. 655-661
US-Z.: "IEEE Transactions on Electron Decices", Vol. ED-22, Nr. 10, Oktober 1975, S. 910-916 *
-Z.: "Solid State Electronics", Vol. 17, Nr. 7, 1974, S. 655-661 *

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0002840A1 (de) * 1977-12-21 1979-07-11 BBC Aktiengesellschaft Brown, Boveri & Cie. Kathodenseitig steuerbarer Thyristor mit einer Anodenzone aus zwei aneinandergrenzenden Bereichen mit unterschiedlicher Leitfähigkeit
EP0287114A1 (en) * 1987-04-17 1988-10-19 Hitachi, Ltd. Thyristor of overvoltage self-protection type
EP0317915A3 (en) * 1987-11-21 1990-04-11 Kabushiki Kaisha Toshiba Method of manufacturing semiconductor device with overvoltage self-protection
US4929563A (en) * 1987-11-21 1990-05-29 Kabushiki Kaisha Toshiba Method of manufacturing semiconductor device with overvoltage self-protection

Also Published As

Publication number Publication date
CH594984A5 (enrdf_load_stackoverflow) 1978-01-31
DE2661096C2 (enrdf_load_stackoverflow) 1989-04-06
DE2628793C2 (enrdf_load_stackoverflow) 1988-06-16

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