DE2626516A1 - Verfahren zum herstellen von lichtleiterstrukturen mit dazwischenliegenden elektroden - Google Patents
Verfahren zum herstellen von lichtleiterstrukturen mit dazwischenliegenden elektrodenInfo
- Publication number
- DE2626516A1 DE2626516A1 DE19762626516 DE2626516A DE2626516A1 DE 2626516 A1 DE2626516 A1 DE 2626516A1 DE 19762626516 DE19762626516 DE 19762626516 DE 2626516 A DE2626516 A DE 2626516A DE 2626516 A1 DE2626516 A1 DE 2626516A1
- Authority
- DE
- Germany
- Prior art keywords
- substrate
- layer
- light guides
- photoresist
- polycrystalline silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 13
- 239000000758 substrate Substances 0.000 claims description 54
- 229920002120 photoresistant polymer Polymers 0.000 claims description 35
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 22
- 229910052751 metal Inorganic materials 0.000 claims description 16
- 239000002184 metal Substances 0.000 claims description 16
- 238000009792 diffusion process Methods 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 9
- 238000005530 etching Methods 0.000 claims description 8
- 239000013078 crystal Substances 0.000 claims description 5
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 claims description 4
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 claims description 4
- 238000001465 metallisation Methods 0.000 description 9
- 238000007740 vapor deposition Methods 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- AWJDQCINSGRBDJ-UHFFFAOYSA-N [Li].[Ta] Chemical compound [Li].[Ta] AWJDQCINSGRBDJ-UHFFFAOYSA-N 0.000 description 1
- 230000002745 absorbent Effects 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- 239000002318 adhesion promoter Substances 0.000 description 1
- XKRFYHLGVUSROY-UHFFFAOYSA-N argon Substances [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- -1 argon ions Chemical class 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 230000003292 diminished effect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 230000008961 swelling Effects 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
- G02F1/035—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect in an optical waveguide structure
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/29—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the position or the direction of light beams, i.e. deflection
- G02F1/31—Digital deflection, i.e. optical switching
- G02F1/313—Digital deflection, i.e. optical switching in an optical waveguide structure
- G02F1/3132—Digital deflection, i.e. optical switching in an optical waveguide structure of directional coupler type
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Optical Integrated Circuits (AREA)
- Semiconductor Lasers (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19762626516 DE2626516A1 (de) | 1976-06-14 | 1976-06-14 | Verfahren zum herstellen von lichtleiterstrukturen mit dazwischenliegenden elektroden |
| FR7717356A FR2355310A1 (fr) | 1976-06-14 | 1977-06-07 | Procede pour la fabrication de structures de guides d'ondes optiques avec des electrodes situees entre eux |
| US05/804,491 US4136212A (en) | 1976-06-14 | 1977-06-08 | Method for the production of light conductor structures with interlaying electrodes |
| GB24505/77A GB1549911A (en) | 1976-06-14 | 1977-06-13 | Production of light-conductor structures |
| JP7043177A JPS52153755A (en) | 1976-06-14 | 1977-06-14 | Method of producing photoconductive structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19762626516 DE2626516A1 (de) | 1976-06-14 | 1976-06-14 | Verfahren zum herstellen von lichtleiterstrukturen mit dazwischenliegenden elektroden |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2626516A1 true DE2626516A1 (de) | 1977-12-22 |
Family
ID=5980459
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19762626516 Withdrawn DE2626516A1 (de) | 1976-06-14 | 1976-06-14 | Verfahren zum herstellen von lichtleiterstrukturen mit dazwischenliegenden elektroden |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US4136212A (enExample) |
| JP (1) | JPS52153755A (enExample) |
| DE (1) | DE2626516A1 (enExample) |
| FR (1) | FR2355310A1 (enExample) |
| GB (1) | GB1549911A (enExample) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3532811A1 (de) * | 1984-09-14 | 1986-03-27 | Canon K.K., Tokio/Tokyo | Optisches duennfilm-element und verfahren zu seiner herstellung |
| US4886587A (en) * | 1984-09-14 | 1989-12-12 | Canon Kabushiki Kaisha | Method of producing thin film optical element by ion injection under electric field |
| US4938836A (en) * | 1987-03-25 | 1990-07-03 | Etat Francais Represente Par Le Ministre Delegue Aux Postes Et Telecommunications | Process for locally increasing the refractive indexes of an electrooptical material usable in guided optics and material obtained by this process |
| DE4221905C1 (en) * | 1992-07-03 | 1993-07-08 | Siemens Ag, 8000 Muenchen, De | Mode splitter structure mfr. in semiconductor component - forming parallel tracks, one of which has metallised layer, using second mask to cover edges of tracks completely |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4750979A (en) * | 1984-11-26 | 1988-06-14 | Hughes Aircraft Company | Process for etching lithium niobate based devices without damaging optical waveguides |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3695745A (en) * | 1970-01-18 | 1972-10-03 | Nippon Electric Co | Light wave guide circuit |
| US3794536A (en) * | 1972-01-31 | 1974-02-26 | Bell Telephone Labor Inc | Dielectric circuit forming process |
| US3983264A (en) * | 1972-07-20 | 1976-09-28 | Texas Instruments Incorporated | Metal-semiconductor ohmic contacts and methods of fabrication |
| US4056304A (en) * | 1975-03-06 | 1977-11-01 | Rca Corporation | Light modulation employing single crystal optical waveguides of niobium-doped lithium tantalate |
| US3997687A (en) * | 1975-04-21 | 1976-12-14 | Rca Corporation | Method of preparing optical waveguides |
| US4040891A (en) * | 1976-06-30 | 1977-08-09 | Ibm Corporation | Etching process utilizing the same positive photoresist layer for two etching steps |
-
1976
- 1976-06-14 DE DE19762626516 patent/DE2626516A1/de not_active Withdrawn
-
1977
- 1977-06-07 FR FR7717356A patent/FR2355310A1/fr active Granted
- 1977-06-08 US US05/804,491 patent/US4136212A/en not_active Expired - Lifetime
- 1977-06-13 GB GB24505/77A patent/GB1549911A/en not_active Expired
- 1977-06-14 JP JP7043177A patent/JPS52153755A/ja active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3532811A1 (de) * | 1984-09-14 | 1986-03-27 | Canon K.K., Tokio/Tokyo | Optisches duennfilm-element und verfahren zu seiner herstellung |
| US4886587A (en) * | 1984-09-14 | 1989-12-12 | Canon Kabushiki Kaisha | Method of producing thin film optical element by ion injection under electric field |
| US4938836A (en) * | 1987-03-25 | 1990-07-03 | Etat Francais Represente Par Le Ministre Delegue Aux Postes Et Telecommunications | Process for locally increasing the refractive indexes of an electrooptical material usable in guided optics and material obtained by this process |
| DE4221905C1 (en) * | 1992-07-03 | 1993-07-08 | Siemens Ag, 8000 Muenchen, De | Mode splitter structure mfr. in semiconductor component - forming parallel tracks, one of which has metallised layer, using second mask to cover edges of tracks completely |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2355310A1 (fr) | 1978-01-13 |
| FR2355310B1 (enExample) | 1980-02-22 |
| JPS52153755A (en) | 1977-12-21 |
| GB1549911A (en) | 1979-08-08 |
| US4136212A (en) | 1979-01-23 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OC | Search report available | ||
| OD | Request for examination | ||
| 8136 | Disposal/non-payment of the fee for publication/grant |