DE2613692A1 - Bistabiler feldeffekttransistor - Google Patents
Bistabiler feldeffekttransistorInfo
- Publication number
- DE2613692A1 DE2613692A1 DE19762613692 DE2613692A DE2613692A1 DE 2613692 A1 DE2613692 A1 DE 2613692A1 DE 19762613692 DE19762613692 DE 19762613692 DE 2613692 A DE2613692 A DE 2613692A DE 2613692 A1 DE2613692 A1 DE 2613692A1
- Authority
- DE
- Germany
- Prior art keywords
- substrate
- zone
- volts
- drain
- current
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 230000005669 field effect Effects 0.000 title claims description 18
- 239000004065 semiconductor Substances 0.000 claims description 77
- 239000000758 substrate Substances 0.000 claims description 77
- 230000015654 memory Effects 0.000 claims description 35
- 239000012535 impurity Substances 0.000 claims description 2
- 230000002441 reversible effect Effects 0.000 claims description 2
- 210000004027 cell Anatomy 0.000 description 16
- 239000002800 charge carrier Substances 0.000 description 15
- 230000000694 effects Effects 0.000 description 13
- 238000003860 storage Methods 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 7
- 230000015556 catabolic process Effects 0.000 description 6
- 230000000295 complement effect Effects 0.000 description 6
- 238000002347 injection Methods 0.000 description 6
- 239000007924 injection Substances 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 230000008859 change Effects 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 230000000903 blocking effect Effects 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 230000002452 interceptive effect Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 230000002028 premature Effects 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 210000000352 storage cell Anatomy 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 101100346656 Drosophila melanogaster strat gene Proteins 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000006399 behavior Effects 0.000 description 1
- 238000005513 bias potential Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000009699 differential effect Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B10/00—Static random access memory [SRAM] devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/35—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices with charge storage in a depletion layer, e.g. charge coupled devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/39—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using thyristors or the avalanche or negative resistance type, e.g. PNPN, SCR, SCS, UJT
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
- H03K3/356—Bistable circuits
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
- H10D12/411—Insulated-gate bipolar transistors [IGBT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
- H10D62/351—Substrate regions of field-effect devices
- H10D62/357—Substrate regions of field-effect devices of FETs
- H10D62/364—Substrate regions of field-effect devices of FETs of IGFETs
- H10D62/378—Contact regions to the substrate regions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Bipolar Transistors (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/565,326 US3974486A (en) | 1975-04-07 | 1975-04-07 | Multiplication mode bistable field effect transistor and memory utilizing same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2613692A1 true DE2613692A1 (de) | 1976-10-21 |
Family
ID=24258122
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19762613692 Withdrawn DE2613692A1 (de) | 1975-04-07 | 1976-03-31 | Bistabiler feldeffekttransistor |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US3974486A (enExample) |
| JP (1) | JPS51123078A (enExample) |
| DE (1) | DE2613692A1 (enExample) |
| FR (1) | FR2307335A1 (enExample) |
| GB (1) | GB1543074A (enExample) |
| IT (1) | IT1064162B (enExample) |
Families Citing this family (30)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4070652A (en) * | 1975-11-14 | 1978-01-24 | Westinghouse Electric Corporation | Acousto-electric signal convolver, correlator and memory |
| JPS586234B2 (ja) * | 1977-11-17 | 1983-02-03 | 富士通株式会社 | 半導体記憶装置 |
| GB2060997A (en) * | 1978-01-03 | 1981-05-07 | Erb D M | Stratified charge memory divide |
| US4199774A (en) * | 1978-09-18 | 1980-04-22 | The Board Of Trustees Of The Leland Stanford Junior University | Monolithic semiconductor switching device |
| FR2602367B1 (fr) * | 1986-07-30 | 1988-10-07 | Bull Sa | Procede de memorisation d'un bit d'information dans une cellule de memoire vive statique integree du type mos, transistor pour la mise en oeuvre du procede et memoire en resultant |
| US5162877A (en) * | 1987-01-27 | 1992-11-10 | Fujitsu Limited | Semiconductor integrated circuit device and method of producing same |
| EP0434850A4 (en) * | 1989-07-18 | 1991-10-02 | Seiko Instruments Inc. | Semiconductor device |
| IE20001068A1 (en) | 1999-12-22 | 2001-07-11 | Nat Univ Ireland Cork | A negative resistance device |
| US6594193B2 (en) | 2000-06-22 | 2003-07-15 | Progressent Technologies, Inc. | Charge pump for negative differential resistance transistor |
| US6559470B2 (en) | 2000-06-22 | 2003-05-06 | Progressed Technologies, Inc. | Negative differential resistance field effect transistor (NDR-FET) and circuits using the same |
| US6724655B2 (en) | 2000-06-22 | 2004-04-20 | Progressant Technologies, Inc. | Memory cell using negative differential resistance field effect transistors |
| JP2002289790A (ja) * | 2001-03-27 | 2002-10-04 | Sanyo Electric Co Ltd | 化合物半導体スイッチ回路装置 |
| US6956262B1 (en) | 2001-12-21 | 2005-10-18 | Synopsys Inc. | Charge trapping pull up element |
| US7453083B2 (en) * | 2001-12-21 | 2008-11-18 | Synopsys, Inc. | Negative differential resistance field effect transistor for implementing a pull up element in a memory cell |
| US6567292B1 (en) | 2002-06-28 | 2003-05-20 | Progressant Technologies, Inc. | Negative differential resistance (NDR) element and memory with reduced soft error rate |
| US6912151B2 (en) * | 2002-06-28 | 2005-06-28 | Synopsys, Inc. | Negative differential resistance (NDR) based memory device with reduced body effects |
| US6795337B2 (en) | 2002-06-28 | 2004-09-21 | Progressant Technologies, Inc. | Negative differential resistance (NDR) elements and memory device using the same |
| US6847562B2 (en) * | 2002-06-28 | 2005-01-25 | Progressant Technologies, Inc. | Enhanced read and write methods for negative differential resistance (NDR) based memory device |
| US7095659B2 (en) * | 2002-06-28 | 2006-08-22 | Progressant Technologies, Inc. | Variable voltage supply bias and methods for negative differential resistance (NDR) based memory device |
| US6864104B2 (en) * | 2002-06-28 | 2005-03-08 | Progressant Technologies, Inc. | Silicon on insulator (SOI) negative differential resistance (NDR) based memory device with reduced body effects |
| US6853035B1 (en) * | 2002-06-28 | 2005-02-08 | Synopsys, Inc. | Negative differential resistance (NDR) memory device with reduced soft error rate |
| US7098472B2 (en) * | 2002-06-28 | 2006-08-29 | Progressant Technologies, Inc. | Negative differential resistance (NDR) elements and memory device using the same |
| US6849483B2 (en) * | 2002-12-09 | 2005-02-01 | Progressant Technologies, Inc. | Charge trapping device and method of forming the same |
| US6980467B2 (en) * | 2002-12-09 | 2005-12-27 | Progressant Technologies, Inc. | Method of forming a negative differential resistance device |
| US7012833B2 (en) * | 2002-12-09 | 2006-03-14 | Progressant Technologies, Inc. | Integrated circuit having negative differential resistance (NDR) devices with varied peak-to-valley ratios (PVRs) |
| US6812084B2 (en) * | 2002-12-09 | 2004-11-02 | Progressant Technologies, Inc. | Adaptive negative differential resistance device |
| US6806117B2 (en) * | 2002-12-09 | 2004-10-19 | Progressant Technologies, Inc. | Methods of testing/stressing a charge trapping device |
| US6979580B2 (en) * | 2002-12-09 | 2005-12-27 | Progressant Technologies, Inc. | Process for controlling performance characteristics of a negative differential resistance (NDR) device |
| US7005711B2 (en) * | 2002-12-20 | 2006-02-28 | Progressant Technologies, Inc. | N-channel pull-up element and logic circuit |
| US9667246B2 (en) * | 2013-10-04 | 2017-05-30 | Peregrine Semiconductor Corporation | Optimized RF switching device architecture for impedance control applications |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3528035A (en) * | 1966-07-11 | 1970-09-08 | Bell Telephone Labor Inc | Two-valley semiconductive devices |
| US3538400A (en) * | 1967-07-31 | 1970-11-03 | Nippon Electric Co | Semiconductor gunn effect switching element |
| DE2043065A1 (de) * | 1970-08-31 | 1972-03-02 | Merk H | Halbleiter Speicher |
-
1975
- 1975-04-07 US US05/565,326 patent/US3974486A/en not_active Expired - Lifetime
-
1976
- 1976-02-17 FR FR7605142A patent/FR2307335A1/fr active Granted
- 1976-02-27 IT IT20662/76A patent/IT1064162B/it active
- 1976-03-23 JP JP51030927A patent/JPS51123078A/ja active Granted
- 1976-03-24 GB GB11804/76A patent/GB1543074A/en not_active Expired
- 1976-03-31 DE DE19762613692 patent/DE2613692A1/de not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| US3974486A (en) | 1976-08-10 |
| FR2307335A1 (fr) | 1976-11-05 |
| JPS51123078A (en) | 1976-10-27 |
| GB1543074A (en) | 1979-03-28 |
| FR2307335B1 (enExample) | 1978-05-19 |
| JPS5534586B2 (enExample) | 1980-09-08 |
| IT1064162B (it) | 1985-02-18 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OD | Request for examination | ||
| 8130 | Withdrawal | ||
| 8139 | Disposal/non-payment of the annual fee |