DE2600990A1 - Verfahren zum polieren von halbleiteroberflaechen, insbesondere galliumphosphidoberflaechen - Google Patents

Verfahren zum polieren von halbleiteroberflaechen, insbesondere galliumphosphidoberflaechen

Info

Publication number
DE2600990A1
DE2600990A1 DE19762600990 DE2600990A DE2600990A1 DE 2600990 A1 DE2600990 A1 DE 2600990A1 DE 19762600990 DE19762600990 DE 19762600990 DE 2600990 A DE2600990 A DE 2600990A DE 2600990 A1 DE2600990 A1 DE 2600990A1
Authority
DE
Germany
Prior art keywords
polishing
hydroxide
hypochlorite
suspension
aluminum
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE19762600990
Other languages
German (de)
English (en)
Inventor
Herbert Dipl Chem Dr Jacob
Ingolf Lampert
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siltronic AG
Original Assignee
Wacker Siltronic AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Wacker Siltronic AG filed Critical Wacker Siltronic AG
Priority to DE19762600990 priority Critical patent/DE2600990A1/de
Priority to US05/749,194 priority patent/US4043861A/en
Priority to JP285177A priority patent/JPS5287976A/ja
Publication of DE2600990A1 publication Critical patent/DE2600990A1/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials

Landscapes

  • Mechanical Treatment Of Semiconductor (AREA)
  • Weting (AREA)
DE19762600990 1976-01-13 1976-01-13 Verfahren zum polieren von halbleiteroberflaechen, insbesondere galliumphosphidoberflaechen Pending DE2600990A1 (de)

Priority Applications (3)

Application Number Priority Date Filing Date Title
DE19762600990 DE2600990A1 (de) 1976-01-13 1976-01-13 Verfahren zum polieren von halbleiteroberflaechen, insbesondere galliumphosphidoberflaechen
US05/749,194 US4043861A (en) 1976-01-13 1976-12-09 Process for polishing semiconductor surfaces and polishing agent used in said process
JP285177A JPS5287976A (en) 1976-01-13 1977-01-13 Method of polishing nonnconductive surface * especially gallium phosphide surface

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19762600990 DE2600990A1 (de) 1976-01-13 1976-01-13 Verfahren zum polieren von halbleiteroberflaechen, insbesondere galliumphosphidoberflaechen

Publications (1)

Publication Number Publication Date
DE2600990A1 true DE2600990A1 (de) 1977-07-21

Family

ID=5967341

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19762600990 Pending DE2600990A1 (de) 1976-01-13 1976-01-13 Verfahren zum polieren von halbleiteroberflaechen, insbesondere galliumphosphidoberflaechen

Country Status (3)

Country Link
US (1) US4043861A (enExample)
JP (1) JPS5287976A (enExample)
DE (1) DE2600990A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3237235A1 (de) * 1982-10-07 1984-04-12 Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen Verfahren zum polieren von iii-v-halbleiteroberflaechen

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55153338A (en) * 1979-05-18 1980-11-29 Fujitsu Ltd Surface treatment of semiconductor substrate
JPH01104265U (enExample) * 1987-12-28 1989-07-13
US5188987A (en) * 1989-04-10 1993-02-23 Kabushiki Kaisha Toshiba Method of manufacturing a semiconductor device using a polishing step prior to a selective vapor growth step
US8623318B2 (en) * 2004-07-12 2014-01-07 Powell Technologies Llc Manufacture of high-strength, low-salt aqueous sodium hypochlorite bleach and substantially dry crystalline salt
US20070215280A1 (en) * 2006-03-15 2007-09-20 Sandhu Rajinder R Semiconductor surface processing

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3342652A (en) * 1964-04-02 1967-09-19 Ibm Chemical polishing of a semi-conductor substrate
US3738882A (en) * 1971-10-14 1973-06-12 Ibm Method for polishing semiconductor gallium arsenide planar surfaces
US3775201A (en) * 1971-10-26 1973-11-27 Ibm Method for polishing semiconductor gallium phosphide planar surfaces
US3869324A (en) * 1973-12-28 1975-03-04 Ibm Method of polishing cadmium telluride

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3237235A1 (de) * 1982-10-07 1984-04-12 Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen Verfahren zum polieren von iii-v-halbleiteroberflaechen

Also Published As

Publication number Publication date
JPS5287976A (en) 1977-07-22
US4043861A (en) 1977-08-23
JPS5338595B2 (enExample) 1978-10-16

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Legal Events

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