DE2555187C2 - - Google Patents

Info

Publication number
DE2555187C2
DE2555187C2 DE2555187A DE2555187A DE2555187C2 DE 2555187 C2 DE2555187 C2 DE 2555187C2 DE 2555187 A DE2555187 A DE 2555187A DE 2555187 A DE2555187 A DE 2555187A DE 2555187 C2 DE2555187 C2 DE 2555187C2
Authority
DE
Germany
Prior art keywords
metallization
oxidizing medium
protective layer
layer
ions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE2555187A
Other languages
German (de)
English (en)
Other versions
DE2555187A1 (de
Inventor
Erich Dipl.-Chem. Dr. 8021 Taufkirchen De Pammer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Priority to DE19752555187 priority Critical patent/DE2555187A1/de
Publication of DE2555187A1 publication Critical patent/DE2555187A1/de
Application granted granted Critical
Publication of DE2555187C2 publication Critical patent/DE2555187C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/064—Manufacture or treatment of conductive parts of the interconnections by modifying the conductivity of conductive parts, e.g. by alloying
    • H10W20/065—Manufacture or treatment of conductive parts of the interconnections by modifying the conductivity of conductive parts, e.g. by alloying by making at least a portion of the conductive part non-conductive, e.g. by oxidation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6314—Formation by oxidation, e.g. oxidation of the substrate of a metallic layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6322—Formation by thermal treatments
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/30—Diffusion for doping of conductive or resistive layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/015—Manufacture or treatment of bond wires
    • H10W72/01515—Forming coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/536—Shapes of wire connectors the connected ends being ball-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/59—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/931—Shapes of bond pads
    • H10W72/934—Cross-sectional shape, i.e. in side view

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
DE19752555187 1975-12-08 1975-12-08 Verfahren zum herstellen einer halbleitervorrichtung Granted DE2555187A1 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE19752555187 DE2555187A1 (de) 1975-12-08 1975-12-08 Verfahren zum herstellen einer halbleitervorrichtung

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19752555187 DE2555187A1 (de) 1975-12-08 1975-12-08 Verfahren zum herstellen einer halbleitervorrichtung

Publications (2)

Publication Number Publication Date
DE2555187A1 DE2555187A1 (de) 1977-06-16
DE2555187C2 true DE2555187C2 (enFirst) 1987-12-10

Family

ID=5963815

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19752555187 Granted DE2555187A1 (de) 1975-12-08 1975-12-08 Verfahren zum herstellen einer halbleitervorrichtung

Country Status (1)

Country Link
DE (1) DE2555187A1 (enFirst)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5937591B2 (ja) * 1979-05-21 1984-09-11 インターナシヨナルビジネス マシーンズ コーポレーシヨン 電気的にプログラム可能な電界効果トランジスタ装置
JPS57113264A (en) * 1980-12-29 1982-07-14 Fujitsu Ltd Manufacture of mis type capacitor
US4526629A (en) * 1984-05-15 1985-07-02 International Business Machines Corporation Catalytic oxidation of solid materials

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3237271A (en) * 1963-08-07 1966-03-01 Bell Telephone Labor Inc Method of fabricating semiconductor devices
DE1910736C3 (de) * 1969-03-03 1978-05-11 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zum Herstellen von gegeneinander elektrisch isolierten, aus Aluminium bestehenden Leiterbahnen und Anwendung des Verfahrens
US3632436A (en) * 1969-07-11 1972-01-04 Rca Corp Contact system for semiconductor devices
FR2076208A5 (en) * 1970-01-06 1971-10-15 Sescosem Multilevel inter connections for integrated circuits - using oxidised metal insulating layers

Also Published As

Publication number Publication date
DE2555187A1 (de) 1977-06-16

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Legal Events

Date Code Title Description
8110 Request for examination paragraph 44
8125 Change of the main classification

Ipc: H01L 21/60

D2 Grant after examination
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee