DE2555187A1 - Verfahren zum herstellen einer halbleitervorrichtung - Google Patents

Verfahren zum herstellen einer halbleitervorrichtung

Info

Publication number
DE2555187A1
DE2555187A1 DE19752555187 DE2555187A DE2555187A1 DE 2555187 A1 DE2555187 A1 DE 2555187A1 DE 19752555187 DE19752555187 DE 19752555187 DE 2555187 A DE2555187 A DE 2555187A DE 2555187 A1 DE2555187 A1 DE 2555187A1
Authority
DE
Germany
Prior art keywords
semiconductor
metallization
ions
oxidizing medium
metallised layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE19752555187
Other languages
German (de)
English (en)
Other versions
DE2555187C2 (https=
Inventor
Erich Dipl Chem Dr Pammer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Priority to DE19752555187 priority Critical patent/DE2555187A1/de
Publication of DE2555187A1 publication Critical patent/DE2555187A1/de
Application granted granted Critical
Publication of DE2555187C2 publication Critical patent/DE2555187C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/064—Manufacture or treatment of conductive parts of the interconnections by modifying the conductivity of conductive parts, e.g. by alloying
    • H10W20/065—Manufacture or treatment of conductive parts of the interconnections by modifying the conductivity of conductive parts, e.g. by alloying by making at least a portion of the conductive part non-conductive, e.g. by oxidation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6314—Formation by oxidation, e.g. oxidation of the substrate of a metallic layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6322—Formation by thermal treatments
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/30—Diffusion for doping of conductive or resistive layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/015—Manufacture or treatment of bond wires
    • H10W72/01515—Forming coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/536—Shapes of wire connectors the connected ends being ball-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/59—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/931—Shapes of bond pads
    • H10W72/934—Cross-sectional shape, i.e. in side view

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
DE19752555187 1975-12-08 1975-12-08 Verfahren zum herstellen einer halbleitervorrichtung Granted DE2555187A1 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE19752555187 DE2555187A1 (de) 1975-12-08 1975-12-08 Verfahren zum herstellen einer halbleitervorrichtung

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19752555187 DE2555187A1 (de) 1975-12-08 1975-12-08 Verfahren zum herstellen einer halbleitervorrichtung

Publications (2)

Publication Number Publication Date
DE2555187A1 true DE2555187A1 (de) 1977-06-16
DE2555187C2 DE2555187C2 (https=) 1987-12-10

Family

ID=5963815

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19752555187 Granted DE2555187A1 (de) 1975-12-08 1975-12-08 Verfahren zum herstellen einer halbleitervorrichtung

Country Status (1)

Country Link
DE (1) DE2555187A1 (https=)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0019063A1 (de) * 1979-05-21 1980-11-26 International Business Machines Corporation Elektrisch programmierbarer Feldeffekttransistor und Verfahren zu dessen Herstellung
EP0055558A3 (en) * 1980-12-29 1983-10-05 Fujitsu Limited Semiconductor device
EP0161619A3 (en) * 1984-05-15 1989-05-31 International Business Machines Corporation Catalytic oxidation of solid materials

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3237271A (en) * 1963-08-07 1966-03-01 Bell Telephone Labor Inc Method of fabricating semiconductor devices
DE1910736A1 (de) * 1969-03-03 1970-09-10 Siemens Ag Verfahren zum Herstellen von elektrisch isolierten,aus Aluminium bestehenden Kontakten
DE2033532A1 (de) * 1969-07-11 1971-01-28 RCA Corp , New York, N Y (V St A) Kontaktsystem fur Halbleiteranordnungen
DE2100189A1 (de) * 1970-01-06 1971-07-15 Sescosem Mehrschichten Verbindungsanordnung fur integrierte Schaltungen und Verfahren zu ihrer Herstellung

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3237271A (en) * 1963-08-07 1966-03-01 Bell Telephone Labor Inc Method of fabricating semiconductor devices
DE1910736A1 (de) * 1969-03-03 1970-09-10 Siemens Ag Verfahren zum Herstellen von elektrisch isolierten,aus Aluminium bestehenden Kontakten
DE2033532A1 (de) * 1969-07-11 1971-01-28 RCA Corp , New York, N Y (V St A) Kontaktsystem fur Halbleiteranordnungen
DE2100189A1 (de) * 1970-01-06 1971-07-15 Sescosem Mehrschichten Verbindungsanordnung fur integrierte Schaltungen und Verfahren zu ihrer Herstellung

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0019063A1 (de) * 1979-05-21 1980-11-26 International Business Machines Corporation Elektrisch programmierbarer Feldeffekttransistor und Verfahren zu dessen Herstellung
EP0055558A3 (en) * 1980-12-29 1983-10-05 Fujitsu Limited Semiconductor device
EP0161619A3 (en) * 1984-05-15 1989-05-31 International Business Machines Corporation Catalytic oxidation of solid materials

Also Published As

Publication number Publication date
DE2555187C2 (https=) 1987-12-10

Similar Documents

Publication Publication Date Title
DE69508737T2 (de) Halbleiteranordnung mit einem ferroelektrischen speicherbaustein, dessen bodenelenelektrode eine sauerstoff-barriere enthält
DE1589810C3 (de) Passiviertes Halbleiterbauelement und Verfahren zu seiner Herstellung
EP0841561B1 (de) Verfahren zum Herstellen eines Sensors mit einer Metallelektrode in einer MOS-Anordnung
DE3437498A1 (de) Akustischer resonator und verfahren zu seiner herstellung
DE2545046A1 (de) Eloxierverfahren
DE3132905A1 (de) "verfahren zur herstellung einer halbleiteranordnung"
DE2834344A1 (de) Verfahren zur herstellung einer optoelektronischen integrierten struktur und eine solche enthaltender optoelektronischer bauteil
DE3434727C2 (https=)
DE2654979C3 (de) Verfahren zur Herstellung einer Halbleitervorrichtung
DE1927646B2 (de) Verfahren zur herstellung einer halbleiteranordnung
DE68911973T2 (de) Anordnung und Verfahren zum Herstellen einer Anordnung.
DE2555187A1 (de) Verfahren zum herstellen einer halbleitervorrichtung
DE2548060A1 (de) Verfahren zum herstellen einer halbleitervorrichtung
DE1764937C3 (de) Verfahren zur Herstellung von Isolationsschichten zwischen mehrschichtig übereinander angeordneten metallischen Leitungsverbindungen für eine Halbleiteranordnung
DE1589866A1 (de) Halbleiterbauelement mit einem Schutzueberzug und Verfahren zu seiner Herstellung
DE19902769A1 (de) Keramisches, passives Bauelement
DE1957500B2 (de) Halbleiterbauelement mit schottky sperrschicht
DE1644012B2 (de) Verfahren zum eindiffundieren von dotierungsstoff aus der gasphase in eine lokal mit einer siliciumnitridschicht maskierte halbleiteroberflaeche
DE2330645C3 (de) Verfahren zum Kontaktieren von integrierten Schaltungen
DE3721929C2 (https=)
DE2937989A1 (de) Halbleitervorrichtung
DE3419079A1 (de) Verfahren zur bildung eines schutzfilms auf einem halbleiterkoerper
DE3229205C2 (https=)
EP0079459A2 (de) Verfahren zum Herstellen einer Metallisierung auf einer Halbleitervorrichtung
DE1564849C3 (de) Verfahren zum Herstellen einer Schutzschicht auf einem Halbleiterkörper

Legal Events

Date Code Title Description
8110 Request for examination paragraph 44
8125 Change of the main classification

Ipc: H01L 21/60

D2 Grant after examination
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee