DE2553071A1 - Ladungsuebertragvorrichtung - Google Patents
LadungsuebertragvorrichtungInfo
- Publication number
- DE2553071A1 DE2553071A1 DE19752553071 DE2553071A DE2553071A1 DE 2553071 A1 DE2553071 A1 DE 2553071A1 DE 19752553071 DE19752553071 DE 19752553071 DE 2553071 A DE2553071 A DE 2553071A DE 2553071 A1 DE2553071 A1 DE 2553071A1
- Authority
- DE
- Germany
- Prior art keywords
- charge storage
- storage areas
- charge
- transfer device
- potential
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000012546 transfer Methods 0.000 title claims description 21
- 239000000758 substrate Substances 0.000 claims description 18
- 239000012535 impurity Substances 0.000 claims description 9
- 239000004065 semiconductor Substances 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 4
- 230000008569 process Effects 0.000 claims description 4
- 238000011109 contamination Methods 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- 230000015654 memory Effects 0.000 description 10
- 239000004020 conductor Substances 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 239000003990 capacitor Substances 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 3
- 239000002800 charge carrier Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 108010014173 Factor X Proteins 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D44/00—Charge transfer devices
- H10D44/40—Charge-coupled devices [CCD]
- H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes
- H10D44/472—Surface-channel CCD
- H10D44/474—Two-phase CCD
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
- G11C19/282—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
- G11C19/285—Peripheral circuits, e.g. for writing into the first stage; for reading-out of the last stage
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/891—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D44/00, e.g. integration of charge-coupled devices [CCD] or charge injection devices [CID
- H10D84/895—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D44/00, e.g. integration of charge-coupled devices [CCD] or charge injection devices [CID comprising bucket-brigade charge-coupled devices
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Non-Volatile Memory (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP49136549A JPS5161271A (enrdf_load_stackoverflow) | 1974-11-26 | 1974-11-26 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE2553071A1 true DE2553071A1 (de) | 1976-08-12 |
Family
ID=15177798
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE19752553071 Withdrawn DE2553071A1 (de) | 1974-11-26 | 1975-11-26 | Ladungsuebertragvorrichtung |
Country Status (3)
Country | Link |
---|---|
JP (1) | JPS5161271A (enrdf_load_stackoverflow) |
DE (1) | DE2553071A1 (enrdf_load_stackoverflow) |
FR (1) | FR2293062A1 (enrdf_load_stackoverflow) |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4940485A (enrdf_load_stackoverflow) * | 1972-08-18 | 1974-04-16 |
-
1974
- 1974-11-26 JP JP49136549A patent/JPS5161271A/ja active Pending
-
1975
- 1975-11-26 DE DE19752553071 patent/DE2553071A1/de not_active Withdrawn
- 1975-11-26 FR FR7536218A patent/FR2293062A1/fr not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
FR2293062A1 (fr) | 1976-06-25 |
JPS5161271A (enrdf_load_stackoverflow) | 1976-05-27 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE2107037C3 (enrdf_load_stackoverflow) | ||
DE2107022C3 (enrdf_load_stackoverflow) | ||
DE2705503C3 (de) | Halbleiterspeicheranordnung | |
EP0027881A1 (de) | Monolithisch integrierter, zweidimensionaler Bildsensor mit einer differenzbildenden Stufe und Verfahren zu dessen Betrieb | |
DE2916884B2 (de) | Programmierbare Halbleiterspeicherzelle | |
DE3886025T2 (de) | Ladungsübertragungsanordnung mit einer verbesserten Ausgangsstufe. | |
DE2810597A1 (de) | Elektrische bauelementstruktur mit einer mehrschichtigen isolierschicht | |
DE2503864B2 (de) | Halbleiterbauelement | |
DE2201028A1 (de) | Feldeffekt-Speicherelement | |
DE3140268A1 (de) | Halbleiteranordnung mit mindestens einem feldeffekttransistor und verfahren zu ihrer herstellung | |
DE3220084C2 (enrdf_load_stackoverflow) | ||
DE2606254A1 (de) | Leitung zum transport einer ladung | |
DE3926474C2 (de) | Permanent-Speicherzellen-Anordnung | |
DE2451364C2 (de) | Digital steuerbarer MOS-Feldeffektkondensator | |
DE2520608C3 (de) | Halbleiteranordnung zum Digitalisieren eines analogen elektrischen Eingangssignals | |
DE2844248C3 (de) | Ladungsübertragungsanordnung | |
DE2703317A1 (de) | Ladungsgekoppelte korrelatoranordnung | |
DE2553071A1 (de) | Ladungsuebertragvorrichtung | |
DE2835143A1 (de) | Thyristor | |
DE2441385C3 (de) | Verfahren zum Vergrößern des Lesesignals bei einem Ein- Transistor-Speicherelement | |
DE2500909A1 (de) | Verfahren zum betrieb einer ladungsverschiebeanordnung nach dem charge-coupled-device-prinzip (bccd) | |
DE2936682C2 (enrdf_load_stackoverflow) | ||
DE69106212T2 (de) | Ladungsträgeranordnung. | |
DE2830437A1 (de) | Ladungsgekoppeltes filter | |
DE2733675A1 (de) | Rauscharme eingangsschaltung fuer ladungsgekoppelte schaltungsanordnungen |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8141 | Disposal/no request for examination |