DE2545908C2 - Bipolares Halbleiterbauelement - Google Patents
Bipolares HalbleiterbauelementInfo
- Publication number
- DE2545908C2 DE2545908C2 DE2545908A DE2545908A DE2545908C2 DE 2545908 C2 DE2545908 C2 DE 2545908C2 DE 2545908 A DE2545908 A DE 2545908A DE 2545908 A DE2545908 A DE 2545908A DE 2545908 C2 DE2545908 C2 DE 2545908C2
- Authority
- DE
- Germany
- Prior art keywords
- region
- channel
- semiconductor device
- electrode
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title claims description 109
- 239000012777 electrically insulating material Substances 0.000 claims description 3
- 230000002093 peripheral effect Effects 0.000 claims description 3
- 239000000463 material Substances 0.000 description 17
- 230000007423 decrease Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000004857 zone melting Methods 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- 229910021476 group 6 element Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
- H10D10/241—Avalanche BJTs
Landscapes
- Bipolar Transistors (AREA)
- Junction Field-Effect Transistors (AREA)
- Amplifiers (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/515,164 US3979769A (en) | 1974-10-16 | 1974-10-16 | Gate modulated bipolar transistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE2545908A1 DE2545908A1 (de) | 1976-05-06 |
| DE2545908C2 true DE2545908C2 (de) | 1987-02-05 |
Family
ID=24050215
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2545908A Expired DE2545908C2 (de) | 1974-10-16 | 1975-10-14 | Bipolares Halbleiterbauelement |
Country Status (6)
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4160986A (en) * | 1976-08-02 | 1979-07-10 | Johnson David M | Bipolar transistors having fixed gain characteristics |
| JPS58103169A (ja) * | 1981-12-15 | 1983-06-20 | Matsushita Electric Ind Co Ltd | 半導体可変抵抗素子 |
| JPH0244758A (ja) * | 1988-08-05 | 1990-02-14 | Koudenshi Kogyo Kenkyusho:Kk | ベース変調形バイポーラ・トランジスタ |
| KR100923993B1 (ko) * | 2005-10-13 | 2009-10-28 | 엘지전자 주식회사 | 부호화/복호화 방법 및 장치. |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL112132C (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1958-02-15 | |||
| DE1294558B (de) * | 1961-06-07 | 1969-05-08 | Westinghouse Electric Corp | Hochspannungsgleichrichter und Verfahren zum Herstellen |
| FR1450846A (fr) * | 1964-07-21 | 1966-06-24 | Siemens Ag | Composant à semi-conducteurs et son procédé de fabrication |
| US3760239A (en) * | 1971-06-09 | 1973-09-18 | Cress S | Coaxial inverted geometry transistor having buried emitter |
| JPS5235515B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1972-09-28 | 1977-09-09 |
-
1974
- 1974-10-16 US US05/515,164 patent/US3979769A/en not_active Expired - Lifetime
-
1975
- 1975-09-25 GB GB39329/75A patent/GB1525469A/en not_active Expired
- 1975-10-14 DE DE2545908A patent/DE2545908C2/de not_active Expired
- 1975-10-15 FR FR7531597A patent/FR2331154A1/fr active Granted
- 1975-10-15 JP JP50123325A patent/JPS5944788B2/ja not_active Expired
- 1975-10-16 SE SE7511628A patent/SE412145B/xx not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5944788B2 (ja) | 1984-11-01 |
| GB1525469A (en) | 1978-09-20 |
| FR2331154A1 (fr) | 1977-06-03 |
| SE7511628L (sv) | 1976-04-20 |
| DE2545908A1 (de) | 1976-05-06 |
| US3979769A (en) | 1976-09-07 |
| FR2331154B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1980-02-15 |
| SE412145B (sv) | 1980-02-18 |
| JPS5164878A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1976-06-04 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OD | Request for examination | ||
| 8120 | Willingness to grant licences paragraph 23 | ||
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |