DE2540159A1 - Diodenlaser mit integriertem gitter- ausgangskoppler - Google Patents
Diodenlaser mit integriertem gitter- ausgangskopplerInfo
- Publication number
- DE2540159A1 DE2540159A1 DE19752540159 DE2540159A DE2540159A1 DE 2540159 A1 DE2540159 A1 DE 2540159A1 DE 19752540159 DE19752540159 DE 19752540159 DE 2540159 A DE2540159 A DE 2540159A DE 2540159 A1 DE2540159 A1 DE 2540159A1
- Authority
- DE
- Germany
- Prior art keywords
- laser
- area
- diode laser
- light
- periodic structure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 230000000737 periodic effect Effects 0.000 claims description 29
- 230000003287 optical effect Effects 0.000 claims description 13
- 239000004065 semiconductor Substances 0.000 claims description 9
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 7
- 230000000694 effects Effects 0.000 claims description 6
- 238000005086 pumping Methods 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 230000007704 transition Effects 0.000 claims description 2
- 125000005842 heteroatom Chemical group 0.000 claims 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 5
- 229910052737 gold Inorganic materials 0.000 description 5
- 239000010931 gold Substances 0.000 description 5
- 239000012071 phase Substances 0.000 description 5
- 230000010287 polarization Effects 0.000 description 5
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 239000002800 charge carrier Substances 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 239000000835 fiber Substances 0.000 description 2
- 238000004943 liquid phase epitaxy Methods 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- MCMNRKCIXSYSNV-UHFFFAOYSA-N ZrO2 Inorganic materials O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 1
- 239000003708 ampul Substances 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007687 exposure technique Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/185—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL]
- H01S5/187—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL] using Bragg reflection
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/515,120 US4006432A (en) | 1974-10-15 | 1974-10-15 | Integrated grating output coupler in diode lasers |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2540159A1 true DE2540159A1 (de) | 1976-04-22 |
Family
ID=24050053
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19752540159 Withdrawn DE2540159A1 (de) | 1974-10-15 | 1975-09-09 | Diodenlaser mit integriertem gitter- ausgangskoppler |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US4006432A (cg-RX-API-DMAC7.html) |
| JP (1) | JPS5164883A (cg-RX-API-DMAC7.html) |
| BE (1) | BE834480A (cg-RX-API-DMAC7.html) |
| CA (1) | CA1049640A (cg-RX-API-DMAC7.html) |
| DE (1) | DE2540159A1 (cg-RX-API-DMAC7.html) |
| FR (1) | FR2288405A1 (cg-RX-API-DMAC7.html) |
| GB (1) | GB1507352A (cg-RX-API-DMAC7.html) |
| NL (1) | NL7512117A (cg-RX-API-DMAC7.html) |
| SE (1) | SE403858B (cg-RX-API-DMAC7.html) |
Families Citing this family (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2418970A1 (fr) * | 1978-03-03 | 1979-09-28 | Thomson Csf | Diode laser a resonateur distribue |
| US4743083A (en) * | 1985-12-30 | 1988-05-10 | Schimpe Robert M | Cylindrical diffraction grating couplers and distributed feedback resonators for guided wave devices |
| GB2203891A (en) * | 1987-04-21 | 1988-10-26 | Plessey Co Plc | Semiconductor diode laser array |
| EP0309744A3 (de) * | 1987-09-29 | 1989-06-28 | Siemens Aktiengesellschaft | Anordnung mit einem flächig sich erstreckenden Dünnfilmwellenleiter |
| JP2692913B2 (ja) * | 1987-12-19 | 1997-12-17 | 株式会社東芝 | グレーティング結合型表面発光レーザ素子およびその変調方法 |
| CA1318722C (en) * | 1988-08-09 | 1993-06-01 | Donald Barry Carlin | Surface emitting lasers with combined output |
| US5070509A (en) * | 1990-08-09 | 1991-12-03 | Eastman Kodak Company | Surface emitting, low threshold (SELTH) laser diode |
| US6330265B1 (en) * | 1998-04-21 | 2001-12-11 | Kabushiki Kaisha Toshiba | Optical functional element and transmission device |
| US6931003B2 (en) * | 2000-02-09 | 2005-08-16 | Bookline Flolmstead Llc | Packet prioritization protocol for a large-scale, high speed computer network |
| US6600765B2 (en) | 2000-04-28 | 2003-07-29 | Photodigm, Inc. | High-power coherent arrays of vertical cavity surface-emitting semiconducting lasers |
| US6963597B2 (en) * | 2000-04-28 | 2005-11-08 | Photodigm, Inc. | Grating-outcoupled surface-emitting lasers |
| US6636547B2 (en) | 2000-04-28 | 2003-10-21 | Photodigm, Inc. | Multiple grating-outcoupled surface-emitting lasers |
| US6647048B2 (en) | 2000-04-28 | 2003-11-11 | Photodigm, Inc. | Grating-outcoupled surface-emitting lasers using quantum wells with thickness and composition variation |
| US6714575B2 (en) | 2001-03-05 | 2004-03-30 | Photodigm, Inc. | Optical modulator system |
| US6775427B2 (en) * | 2001-03-09 | 2004-08-10 | Photodigm, Inc. | Laterally coupled wave guides |
| US6633716B2 (en) | 2001-05-02 | 2003-10-14 | Motorola, Inc. | Optical device and method therefor |
| US6594422B2 (en) | 2001-05-02 | 2003-07-15 | Motorola, Inc. | Opto-coupling device structure and method therefor |
| US7043106B2 (en) * | 2002-07-22 | 2006-05-09 | Applied Materials, Inc. | Optical ready wafers |
| US7072534B2 (en) * | 2002-07-22 | 2006-07-04 | Applied Materials, Inc. | Optical ready substrates |
| US7110629B2 (en) * | 2002-07-22 | 2006-09-19 | Applied Materials, Inc. | Optical ready substrates |
| US7529435B2 (en) * | 2003-05-29 | 2009-05-05 | Applied Materials, Inc. | Serial routing of optical signals |
| US20050016446A1 (en) | 2003-07-23 | 2005-01-27 | Abbott John S. | CaF2 lenses with reduced birefringence |
| US7113526B2 (en) * | 2003-10-09 | 2006-09-26 | Photodigm, Inc. | Multi-wavelength grating-outcoupled surface emitting laser system |
| US7092598B2 (en) * | 2003-10-09 | 2006-08-15 | Photodigm, Inc. | Chip-scale WDM system using grating-outcoupled surface-emitting lasers |
| WO2007027615A1 (en) * | 2005-09-01 | 2007-03-08 | Applied Materials, Inc. | Ridge technique for fabricating an optical detector and an optical waveguide |
| WO2009156412A1 (en) * | 2008-06-23 | 2009-12-30 | Imec | Method and system for coupling radiation |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3758875A (en) * | 1970-05-01 | 1973-09-11 | Bell Telephone Labor Inc | Double heterostructure junction lasers |
| US3898585A (en) * | 1974-01-14 | 1975-08-05 | Ibm | Leaky corrugated optical waveguide device |
-
1974
- 1974-10-15 US US05/515,120 patent/US4006432A/en not_active Expired - Lifetime
-
1975
- 1975-05-08 GB GB19417/75A patent/GB1507352A/en not_active Expired
- 1975-09-09 DE DE19752540159 patent/DE2540159A1/de not_active Withdrawn
- 1975-10-07 JP JP50120351A patent/JPS5164883A/ja active Pending
- 1975-10-09 CA CA237,368A patent/CA1049640A/en not_active Expired
- 1975-10-13 FR FR7531271A patent/FR2288405A1/fr active Granted
- 1975-10-14 BE BE160909A patent/BE834480A/xx unknown
- 1975-10-14 SE SE7511479A patent/SE403858B/xx unknown
- 1975-10-15 NL NL7512117A patent/NL7512117A/xx not_active Application Discontinuation
Also Published As
| Publication number | Publication date |
|---|---|
| CA1049640A (en) | 1979-02-27 |
| SE7511479L (sv) | 1976-04-20 |
| GB1507352A (en) | 1978-04-12 |
| NL7512117A (nl) | 1976-04-21 |
| US4006432A (en) | 1977-02-01 |
| FR2288405A1 (fr) | 1976-05-14 |
| SE403858B (sv) | 1978-09-04 |
| BE834480A (fr) | 1976-02-02 |
| FR2288405B1 (cg-RX-API-DMAC7.html) | 1980-04-25 |
| JPS5164883A (cg-RX-API-DMAC7.html) | 1976-06-04 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8139 | Disposal/non-payment of the annual fee |