CA1049640A - Integrated grating output coupler in diode lasers - Google Patents
Integrated grating output coupler in diode lasersInfo
- Publication number
- CA1049640A CA1049640A CA237,368A CA237368A CA1049640A CA 1049640 A CA1049640 A CA 1049640A CA 237368 A CA237368 A CA 237368A CA 1049640 A CA1049640 A CA 1049640A
- Authority
- CA
- Canada
- Prior art keywords
- laser
- region
- periodic structure
- light
- junction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000000737 periodic effect Effects 0.000 claims abstract description 52
- 230000005855 radiation Effects 0.000 claims description 19
- 230000001427 coherent effect Effects 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 15
- 239000004065 semiconductor Substances 0.000 claims description 14
- 238000005086 pumping Methods 0.000 claims description 11
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 7
- 239000000969 carrier Substances 0.000 claims description 6
- 230000006798 recombination Effects 0.000 claims description 5
- 238000005215 recombination Methods 0.000 claims description 5
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 239000007787 solid Substances 0.000 claims description 2
- 239000012071 phase Substances 0.000 description 7
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 6
- 230000010287 polarization Effects 0.000 description 5
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 239000013590 bulk material Substances 0.000 description 2
- 238000004943 liquid phase epitaxy Methods 0.000 description 2
- 239000000615 nonconductor Substances 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- MCMNRKCIXSYSNV-UHFFFAOYSA-N ZrO2 Inorganic materials O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- MDPILPRLPQYEEN-UHFFFAOYSA-N aluminium arsenide Chemical compound [As]#[Al] MDPILPRLPQYEEN-UHFFFAOYSA-N 0.000 description 1
- 239000003708 ampul Substances 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000007687 exposure technique Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002674 ointment Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000001579 optical reflectometry Methods 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/185—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL]
- H01S5/187—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL] using Bragg reflection
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/515,120 US4006432A (en) | 1974-10-15 | 1974-10-15 | Integrated grating output coupler in diode lasers |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1049640A true CA1049640A (en) | 1979-02-27 |
Family
ID=24050053
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA237,368A Expired CA1049640A (en) | 1974-10-15 | 1975-10-09 | Integrated grating output coupler in diode lasers |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US4006432A (cg-RX-API-DMAC7.html) |
| JP (1) | JPS5164883A (cg-RX-API-DMAC7.html) |
| BE (1) | BE834480A (cg-RX-API-DMAC7.html) |
| CA (1) | CA1049640A (cg-RX-API-DMAC7.html) |
| DE (1) | DE2540159A1 (cg-RX-API-DMAC7.html) |
| FR (1) | FR2288405A1 (cg-RX-API-DMAC7.html) |
| GB (1) | GB1507352A (cg-RX-API-DMAC7.html) |
| NL (1) | NL7512117A (cg-RX-API-DMAC7.html) |
| SE (1) | SE403858B (cg-RX-API-DMAC7.html) |
Families Citing this family (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2418970A1 (fr) * | 1978-03-03 | 1979-09-28 | Thomson Csf | Diode laser a resonateur distribue |
| US4743083A (en) * | 1985-12-30 | 1988-05-10 | Schimpe Robert M | Cylindrical diffraction grating couplers and distributed feedback resonators for guided wave devices |
| GB2203891A (en) * | 1987-04-21 | 1988-10-26 | Plessey Co Plc | Semiconductor diode laser array |
| EP0309744A3 (de) * | 1987-09-29 | 1989-06-28 | Siemens Aktiengesellschaft | Anordnung mit einem flächig sich erstreckenden Dünnfilmwellenleiter |
| JP2692913B2 (ja) * | 1987-12-19 | 1997-12-17 | 株式会社東芝 | グレーティング結合型表面発光レーザ素子およびその変調方法 |
| CA1318722C (en) * | 1988-08-09 | 1993-06-01 | Donald Barry Carlin | Surface emitting lasers with combined output |
| US5070509A (en) * | 1990-08-09 | 1991-12-03 | Eastman Kodak Company | Surface emitting, low threshold (SELTH) laser diode |
| US6330265B1 (en) * | 1998-04-21 | 2001-12-11 | Kabushiki Kaisha Toshiba | Optical functional element and transmission device |
| US6931003B2 (en) * | 2000-02-09 | 2005-08-16 | Bookline Flolmstead Llc | Packet prioritization protocol for a large-scale, high speed computer network |
| US6600765B2 (en) | 2000-04-28 | 2003-07-29 | Photodigm, Inc. | High-power coherent arrays of vertical cavity surface-emitting semiconducting lasers |
| US6963597B2 (en) * | 2000-04-28 | 2005-11-08 | Photodigm, Inc. | Grating-outcoupled surface-emitting lasers |
| US6636547B2 (en) | 2000-04-28 | 2003-10-21 | Photodigm, Inc. | Multiple grating-outcoupled surface-emitting lasers |
| US6647048B2 (en) | 2000-04-28 | 2003-11-11 | Photodigm, Inc. | Grating-outcoupled surface-emitting lasers using quantum wells with thickness and composition variation |
| US6714575B2 (en) | 2001-03-05 | 2004-03-30 | Photodigm, Inc. | Optical modulator system |
| US6775427B2 (en) * | 2001-03-09 | 2004-08-10 | Photodigm, Inc. | Laterally coupled wave guides |
| US6633716B2 (en) | 2001-05-02 | 2003-10-14 | Motorola, Inc. | Optical device and method therefor |
| US6594422B2 (en) | 2001-05-02 | 2003-07-15 | Motorola, Inc. | Opto-coupling device structure and method therefor |
| US7043106B2 (en) * | 2002-07-22 | 2006-05-09 | Applied Materials, Inc. | Optical ready wafers |
| US7072534B2 (en) * | 2002-07-22 | 2006-07-04 | Applied Materials, Inc. | Optical ready substrates |
| US7110629B2 (en) * | 2002-07-22 | 2006-09-19 | Applied Materials, Inc. | Optical ready substrates |
| US7529435B2 (en) * | 2003-05-29 | 2009-05-05 | Applied Materials, Inc. | Serial routing of optical signals |
| US20050016446A1 (en) | 2003-07-23 | 2005-01-27 | Abbott John S. | CaF2 lenses with reduced birefringence |
| US7113526B2 (en) * | 2003-10-09 | 2006-09-26 | Photodigm, Inc. | Multi-wavelength grating-outcoupled surface emitting laser system |
| US7092598B2 (en) * | 2003-10-09 | 2006-08-15 | Photodigm, Inc. | Chip-scale WDM system using grating-outcoupled surface-emitting lasers |
| WO2007027615A1 (en) * | 2005-09-01 | 2007-03-08 | Applied Materials, Inc. | Ridge technique for fabricating an optical detector and an optical waveguide |
| WO2009156412A1 (en) * | 2008-06-23 | 2009-12-30 | Imec | Method and system for coupling radiation |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3758875A (en) * | 1970-05-01 | 1973-09-11 | Bell Telephone Labor Inc | Double heterostructure junction lasers |
| US3898585A (en) * | 1974-01-14 | 1975-08-05 | Ibm | Leaky corrugated optical waveguide device |
-
1974
- 1974-10-15 US US05/515,120 patent/US4006432A/en not_active Expired - Lifetime
-
1975
- 1975-05-08 GB GB19417/75A patent/GB1507352A/en not_active Expired
- 1975-09-09 DE DE19752540159 patent/DE2540159A1/de not_active Withdrawn
- 1975-10-07 JP JP50120351A patent/JPS5164883A/ja active Pending
- 1975-10-09 CA CA237,368A patent/CA1049640A/en not_active Expired
- 1975-10-13 FR FR7531271A patent/FR2288405A1/fr active Granted
- 1975-10-14 BE BE160909A patent/BE834480A/xx unknown
- 1975-10-14 SE SE7511479A patent/SE403858B/xx unknown
- 1975-10-15 NL NL7512117A patent/NL7512117A/xx not_active Application Discontinuation
Also Published As
| Publication number | Publication date |
|---|---|
| SE7511479L (sv) | 1976-04-20 |
| GB1507352A (en) | 1978-04-12 |
| NL7512117A (nl) | 1976-04-21 |
| US4006432A (en) | 1977-02-01 |
| FR2288405A1 (fr) | 1976-05-14 |
| SE403858B (sv) | 1978-09-04 |
| DE2540159A1 (de) | 1976-04-22 |
| BE834480A (fr) | 1976-02-02 |
| FR2288405B1 (cg-RX-API-DMAC7.html) | 1980-04-25 |
| JPS5164883A (cg-RX-API-DMAC7.html) | 1976-06-04 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CA1049640A (en) | Integrated grating output coupler in diode lasers | |
| US4023993A (en) | Method of making an electrically pumped solid-state distributed feedback laser | |
| US5365541A (en) | Mirror with photonic band structure | |
| Lee et al. | A stripe-geometry double-heterostructure amplified-spontaneous-emission (superluminescent) diode | |
| Scifres et al. | Highly collimated laser beams from electrically pumped SH GaAs/GaAlAs distributed− feedback lasers | |
| US4821276A (en) | Super-luminescent diode | |
| JPS59144193A (ja) | 半導体レ−ザ | |
| US5060237A (en) | Multi-beam laser diode array | |
| JPH0318086A (ja) | 半導体放射素子の放射光結合システムおよびこれを用いた放射光処理アレイ | |
| EP0397691B1 (en) | Current injection laser | |
| US3514715A (en) | Multilayer,light-emitting semiconductor device | |
| JPS5857774A (ja) | 半導体レ−ザ | |
| US3969686A (en) | Beam collimation using multiple coupled elements | |
| US3837728A (en) | Injected carrier guided wave deflector | |
| US4110661A (en) | Light emitting device for optical communications | |
| EP0442562B1 (en) | Antenna system with adjustable beam width and beam orientation | |
| US4718069A (en) | Semiconductor laser array with single lobed output | |
| EP0280459B1 (en) | A scanning apparatus | |
| CA1044355A (en) | Electrically pumped, solid-state distributed feedback laser | |
| US7010012B2 (en) | Method and apparatus for reducing specular reflections in semiconductor lasers | |
| DE19954093A1 (de) | Anordnung für Hochleistungslaser | |
| RU2535649C1 (ru) | Полупроводниковый лазер | |
| JPH054835B2 (cg-RX-API-DMAC7.html) | ||
| Dzurko et al. | Distributed Bragg reflector ring oscillators: A large aperture source of high single-mode optical power | |
| Sakai et al. | Dual wavelength InGaAsP/InP TJS lasers |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MKEX | Expiry |
Effective date: 19960227 |