DE2536704A1 - Lichtemittierende diode - Google Patents
Lichtemittierende diodeInfo
- Publication number
- DE2536704A1 DE2536704A1 DE19752536704 DE2536704A DE2536704A1 DE 2536704 A1 DE2536704 A1 DE 2536704A1 DE 19752536704 DE19752536704 DE 19752536704 DE 2536704 A DE2536704 A DE 2536704A DE 2536704 A1 DE2536704 A1 DE 2536704A1
- Authority
- DE
- Germany
- Prior art keywords
- light
- emitting diode
- lens
- lens structure
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims description 21
- 238000000034 method Methods 0.000 claims description 12
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims 2
- 229920002120 photoresistant polymer Polymers 0.000 description 10
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 9
- 229910004298 SiO 2 Inorganic materials 0.000 description 7
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 6
- 239000013078 crystal Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- 230000008878 coupling Effects 0.000 description 4
- 238000010168 coupling process Methods 0.000 description 4
- 238000005859 coupling reaction Methods 0.000 description 4
- 238000005755 formation reaction Methods 0.000 description 4
- 239000000155 melt Substances 0.000 description 4
- 238000005530 etching Methods 0.000 description 3
- 239000000835 fiber Substances 0.000 description 3
- 239000007791 liquid phase Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 238000004943 liquid phase epitaxy Methods 0.000 description 2
- 229910001020 Au alloy Inorganic materials 0.000 description 1
- 229910000927 Ge alloy Inorganic materials 0.000 description 1
- 239000002775 capsule Substances 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000002604 ultrasonography Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CA208,827A CA1007736A (en) | 1974-09-10 | 1974-09-10 | Integral lens light emitting diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2536704A1 true DE2536704A1 (de) | 1976-03-18 |
Family
ID=4101088
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19752536704 Pending DE2536704A1 (de) | 1974-09-10 | 1975-08-18 | Lichtemittierende diode |
Country Status (7)
| Country | Link |
|---|---|
| JP (2) | JPS5152792A (ja) |
| CA (1) | CA1007736A (ja) |
| DE (1) | DE2536704A1 (ja) |
| FR (1) | FR2284990A1 (ja) |
| GB (1) | GB1487024A (ja) |
| NL (1) | NL7509408A (ja) |
| SE (1) | SE407129B (ja) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19911717A1 (de) * | 1999-03-16 | 2000-09-28 | Osram Opto Semiconductors Gmbh | Monolithisches elektrolumineszierendes Bauelement und Verfahren zu dessen Herstellung |
| DE10019665A1 (de) * | 2000-04-19 | 2001-10-31 | Osram Opto Semiconductors Gmbh | Lumineszenzdiodenchip und Verfahren zu dessen Herstellung |
| EP1807879B1 (de) * | 2004-09-27 | 2020-01-22 | OSRAM Opto Semiconductors GmbH | Optoelektronischer Dünnfilmchip |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5478684A (en) * | 1977-12-05 | 1979-06-22 | Nec Corp | Semiconductor luminous element |
| FR2554606B1 (fr) * | 1983-11-04 | 1987-04-10 | Thomson Csf | Dispositif optique de concentration du rayonnement lumineux emis par une diode electroluminescente, et diode electroluminescente comportant un tel dispositif |
| JPS63155083A (ja) * | 1986-12-19 | 1988-06-28 | 小林 寛重 | 三層ステツカ−およびステツカ−付名刺 |
| JPH0727494Y2 (ja) * | 1987-06-18 | 1995-06-21 | 陽子 藤田 | 宅配用荷札 |
| JPH0511569Y2 (ja) * | 1988-06-06 | 1993-03-23 | ||
| GB0017655D0 (en) * | 2000-07-19 | 2000-09-06 | Secr Defence | Light emtting diode arrangements |
| JP2004158557A (ja) * | 2002-11-05 | 2004-06-03 | Shurai Kagi Kofun Yugenkoshi | 類似フリップチップ型の発光ダイオード装置パッケージ |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5123435B2 (ja) * | 1971-08-18 | 1976-07-16 |
-
1974
- 1974-09-10 CA CA208,827A patent/CA1007736A/en not_active Expired
-
1975
- 1975-08-07 NL NL7509408A patent/NL7509408A/xx not_active Application Discontinuation
- 1975-08-13 GB GB33788/75A patent/GB1487024A/en not_active Expired
- 1975-08-18 DE DE19752536704 patent/DE2536704A1/de active Pending
- 1975-09-04 FR FR7527215A patent/FR2284990A1/fr not_active Withdrawn
- 1975-09-04 JP JP10659175A patent/JPS5152792A/ja active Pending
- 1975-09-09 SE SE7510038A patent/SE407129B/xx unknown
-
1983
- 1983-06-07 JP JP1983085903U patent/JPS6017910Y2/ja not_active Expired
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19911717A1 (de) * | 1999-03-16 | 2000-09-28 | Osram Opto Semiconductors Gmbh | Monolithisches elektrolumineszierendes Bauelement und Verfahren zu dessen Herstellung |
| DE10019665A1 (de) * | 2000-04-19 | 2001-10-31 | Osram Opto Semiconductors Gmbh | Lumineszenzdiodenchip und Verfahren zu dessen Herstellung |
| US7026657B2 (en) | 2000-04-19 | 2006-04-11 | Osram Gmbh | High radiance led chip and a method for producing same |
| US7306960B2 (en) | 2000-04-19 | 2007-12-11 | Osram Gmbh | High radiance LED chip and a method for producing same |
| EP1807879B1 (de) * | 2004-09-27 | 2020-01-22 | OSRAM Opto Semiconductors GmbH | Optoelektronischer Dünnfilmchip |
Also Published As
| Publication number | Publication date |
|---|---|
| SE407129B (sv) | 1979-03-12 |
| GB1487024A (en) | 1977-09-28 |
| JPS5152792A (ja) | 1976-05-10 |
| JPS5918455U (ja) | 1984-02-04 |
| NL7509408A (nl) | 1976-03-12 |
| CA1007736A (en) | 1977-03-29 |
| SE7510038L (sv) | 1976-03-11 |
| FR2284990A1 (fr) | 1976-04-09 |
| JPS6017910Y2 (ja) | 1985-05-31 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE69229991T2 (de) | Lichtemittierende Diode mit einer dicken transparenten Schicht | |
| DE2509533A1 (de) | Sonnenzelle | |
| DE19807758B4 (de) | Lichtemittierende Diodenstruktur und Verfahren zu deren Herstellung | |
| DE3689067T2 (de) | Verfahren zur herstellung von optischen halbleiterstrukturen. | |
| DE2543471A1 (de) | Leuchtdiodenanordnung mit gewoelbter struktur | |
| DE2538471A1 (de) | Optisches bauelement mit doppelheterostruktur | |
| DE2527179A1 (de) | Halbleiterbauelement mit heterostruktur sowie herstellungsverfahren hierfuer | |
| DE3924197A1 (de) | Halbleiterlaser | |
| DE19911717A1 (de) | Monolithisches elektrolumineszierendes Bauelement und Verfahren zu dessen Herstellung | |
| DE3415576A1 (de) | Halbleiterduennschichtlinse | |
| DE2920454C2 (de) | Halbleiterlaser und Verfahren zu dessen Herstellung | |
| DE69630714T2 (de) | Lichtemittierende Halbleitervorrichtung und deren Herstellung | |
| DE2536704A1 (de) | Lichtemittierende diode | |
| DE2915888C2 (ja) | ||
| DE69635180T2 (de) | Lichtemittierende Halbleitervorrichtung | |
| DE69714815T2 (de) | Halbleiterlaser mit Spiegelbeschichtung und dessen Herstellungsverfahren | |
| DE4130536A1 (de) | Laserdiode fuer sichtbares licht | |
| DE3221497A1 (de) | Stabilisierter halbleiterlaser | |
| DE2554029A1 (de) | Verfahren zur herstellung optoelektronischer anordnungen | |
| DE69107630T2 (de) | Halbleiterstruktur für optoelektronische Vorrichtung. | |
| DE2538248B2 (de) | Elektrolumineszenz-Diode und Verfahren zu ihrer Herstellung | |
| DE2507357C2 (de) | Halbleiterbauelement und Verfahren zu seiner Herstellung | |
| EP0058231B1 (de) | Herstellung von Lumineszenz- oder Laserdioden mit intern begrenzter Leuchtfläche | |
| EP0002658B1 (de) | Verfahren zum Herstellen einer Halbleiteranordnung | |
| DE3888575T2 (de) | Lichtemittierende Vorrichtung. |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OHJ | Non-payment of the annual fee |