DE2523539C3 - Dielektrisches einkristallines aktives Medium für Laser - Google Patents

Dielektrisches einkristallines aktives Medium für Laser

Info

Publication number
DE2523539C3
DE2523539C3 DE2523539A DE2523539A DE2523539C3 DE 2523539 C3 DE2523539 C3 DE 2523539C3 DE 2523539 A DE2523539 A DE 2523539A DE 2523539 A DE2523539 A DE 2523539A DE 2523539 C3 DE2523539 C3 DE 2523539C3
Authority
DE
Germany
Prior art keywords
single crystal
crystal
laser
light
lindp
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE2523539A
Other languages
German (de)
English (en)
Other versions
DE2523539B2 (de
DE2523539A1 (de
Inventor
Jun-Ichi Tachikawa Tokio Nakano
Kenju Musashino Otsuka
Harue Sagamihara Kanagawa Suzuki
Tomoaki Mitaka Yamada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Publication of DE2523539A1 publication Critical patent/DE2523539A1/de
Publication of DE2523539B2 publication Critical patent/DE2523539B2/de
Application granted granted Critical
Publication of DE2523539C3 publication Critical patent/DE2523539C3/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16—Solid materials
    • H01S3/1688—Stoichiometric laser compounds, i.e. in which the active element forms one component of a stoichiometric formula rather than being merely a dopant
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/14—Phosphates

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Electromagnetism (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Optics & Photonics (AREA)
  • Inorganic Chemistry (AREA)
  • Lasers (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE2523539A 1974-05-27 1975-05-27 Dielektrisches einkristallines aktives Medium für Laser Expired DE2523539C3 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP49059471A JPS5242360B2 (enExample) 1974-05-27 1974-05-27

Publications (3)

Publication Number Publication Date
DE2523539A1 DE2523539A1 (de) 1975-12-11
DE2523539B2 DE2523539B2 (de) 1977-09-01
DE2523539C3 true DE2523539C3 (de) 1978-05-03

Family

ID=13114246

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2523539A Expired DE2523539C3 (de) 1974-05-27 1975-05-27 Dielektrisches einkristallines aktives Medium für Laser

Country Status (5)

Country Link
JP (1) JPS5242360B2 (enExample)
DE (1) DE2523539C3 (enExample)
FR (1) FR2273383B1 (enExample)
GB (1) GB1507534A (enExample)
NL (1) NL159827B (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5257277A (en) * 1990-01-19 1993-10-26 Mitsubishi Denki Kabushiki Kaisha Semiconductor-laser-pumped, solid-state laser
US5159605A (en) * 1990-01-19 1992-10-27 Mitsubishi Denki Kabushiki Kaisha Semiconductor-laser-pumped, solid-state laser

Also Published As

Publication number Publication date
FR2273383A1 (enExample) 1975-12-26
DE2523539B2 (de) 1977-09-01
FR2273383B1 (enExample) 1977-04-15
NL159827B (nl) 1979-03-15
JPS5242360B2 (enExample) 1977-10-24
DE2523539A1 (de) 1975-12-11
NL7506135A (nl) 1975-12-01
JPS50152694A (enExample) 1975-12-08
GB1507534A (en) 1978-04-19

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Legal Events

Date Code Title Description
C3 Grant after two publication steps (3rd publication)
8328 Change in the person/name/address of the agent

Free format text: HENKEL, G., DR.PHIL. FEILER, L., DR.RER.NAT. HAENZEL, W., DIPL.-ING., PAT.-ANW., 8000 MUENCHEN

8327 Change in the person/name/address of the patent owner

Owner name: NIPPON TELEGRAPH AND TELEPHONE CORP., TOKIO/TOKYO,

8328 Change in the person/name/address of the agent

Free format text: HENKEL, G., DR.PHIL. FEILER, L., DR.RER.NAT. HAENZEL, W., DIPL.-ING. KOTTMANN, D., DIPL.-ING, PAT.-ANW., 8000 MUENCHEN