DE2520825C2 - Oszillator - Google Patents
OszillatorInfo
- Publication number
- DE2520825C2 DE2520825C2 DE2520825A DE2520825A DE2520825C2 DE 2520825 C2 DE2520825 C2 DE 2520825C2 DE 2520825 A DE2520825 A DE 2520825A DE 2520825 A DE2520825 A DE 2520825A DE 2520825 C2 DE2520825 C2 DE 2520825C2
- Authority
- DE
- Germany
- Prior art keywords
- area
- emitter
- semiconductor
- gate
- collector
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 55
- 238000009792 diffusion process Methods 0.000 claims description 24
- 239000012535 impurity Substances 0.000 claims description 18
- 239000000969 carrier Substances 0.000 claims description 14
- 239000003990 capacitor Substances 0.000 claims description 5
- 230000010355 oscillation Effects 0.000 claims description 5
- 230000003321 amplification Effects 0.000 description 9
- 238000003199 nucleic acid amplification method Methods 0.000 description 9
- 230000007704 transition Effects 0.000 description 8
- 238000005036 potential barrier Methods 0.000 description 6
- 238000002347 injection Methods 0.000 description 5
- 239000007924 injection Substances 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 239000013078 crystal Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000013459 approach Methods 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/20—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising resistance and either capacitance or inductance, e.g. phase-shift oscillator
- H03B5/24—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising resistance and either capacitance or inductance, e.g. phase-shift oscillator active element in amplifier being semiconductor device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
- H01L27/0711—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors
- H01L27/0716—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors in combination with vertical bipolar transistors and diodes, or capacitors, or resistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1203—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device the amplifier being a single transistor
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1231—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device the amplifier comprising one or more bipolar transistors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Bipolar Transistors (AREA)
- Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5211974A JPS5718710B2 (US20080293856A1-20081127-C00150.png) | 1974-05-10 | 1974-05-10 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE2520825A1 DE2520825A1 (de) | 1975-11-20 |
| DE2520825C2 true DE2520825C2 (de) | 1982-07-08 |
Family
ID=12905973
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2520825A Expired DE2520825C2 (de) | 1974-05-10 | 1975-05-09 | Oszillator |
Country Status (9)
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5718710B2 (US20080293856A1-20081127-C00150.png) * | 1974-05-10 | 1982-04-17 | ||
| US4150344A (en) * | 1976-03-01 | 1979-04-17 | Siemens Aktiengesellschaft | Tunable microwave oscillator |
| DE2709314C3 (de) * | 1977-03-03 | 1980-03-20 | Texas Instruments Deutschland Gmbh, 8050 Freising | HF-Verstärkerschaltung |
| US7141865B2 (en) * | 2001-05-21 | 2006-11-28 | James Rodger Leitch | Low noise semiconductor amplifier |
| JP2008142832A (ja) * | 2006-12-11 | 2008-06-26 | Aisho:Kk | パイプ切断機 |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BE547227A (US20080293856A1-20081127-C00150.png) * | 1955-04-21 | |||
| US3500141A (en) * | 1964-10-13 | 1970-03-10 | Ibm | Transistor structure |
| US3445734A (en) * | 1965-12-22 | 1969-05-20 | Ibm | Single diffused surface transistor and method of making same |
| US3591430A (en) * | 1968-11-14 | 1971-07-06 | Philco Ford Corp | Method for fabricating bipolar planar transistor having reduced minority carrier fringing |
| BE756139A (fr) * | 1969-09-15 | 1971-02-15 | Rca Corp | Circuit intermediaire integre pour le couplage d'un circuit de commandea impedance de sortie faible a une charge a impedance d'entree elevee |
| JPS4831516B1 (US20080293856A1-20081127-C00150.png) * | 1969-10-17 | 1973-09-29 | ||
| DE2211384A1 (de) * | 1971-03-20 | 1972-11-30 | Philips Nv | Schaltungsanordnung mit mindestens einem strahlungsgespeisten Schaltungselement und Halbleiteranordnung zur Anwendung in einer derartigen Schaltungsanordnung |
| US3822409A (en) * | 1971-06-01 | 1974-07-02 | Matsushita Electric Works Ltd | Photosensitive solid oscillator |
| JPS5123432B2 (US20080293856A1-20081127-C00150.png) * | 1971-08-26 | 1976-07-16 | ||
| JPS493583A (US20080293856A1-20081127-C00150.png) * | 1972-04-20 | 1974-01-12 | ||
| JPS5147583B2 (US20080293856A1-20081127-C00150.png) * | 1972-12-29 | 1976-12-15 | ||
| JPS49131388A (US20080293856A1-20081127-C00150.png) * | 1973-04-18 | 1974-12-17 | ||
| JPS5147584B2 (US20080293856A1-20081127-C00150.png) * | 1972-12-29 | 1976-12-15 | ||
| JPS5718710B2 (US20080293856A1-20081127-C00150.png) * | 1974-05-10 | 1982-04-17 |
-
1974
- 1974-05-10 JP JP5211974A patent/JPS5718710B2/ja not_active Expired
-
1975
- 1975-04-25 CA CA225,488A patent/CA1029821A/en not_active Expired
- 1975-04-25 US US05/571,708 patent/US3955154A/en not_active Expired - Lifetime
- 1975-05-02 GB GB18509/75A patent/GB1505376A/en not_active Expired
- 1975-05-07 FR FR7514457A patent/FR2270712B1/fr not_active Expired
- 1975-05-07 NL NL7505426A patent/NL7505426A/xx not_active Application Discontinuation
- 1975-05-09 ES ES437556A patent/ES437556A1/es not_active Expired
- 1975-05-09 DE DE2520825A patent/DE2520825C2/de not_active Expired
- 1975-05-12 AT AT0358975A patent/AT374975B/de not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| FR2270712B1 (US20080293856A1-20081127-C00150.png) | 1980-10-17 |
| JPS5718710B2 (US20080293856A1-20081127-C00150.png) | 1982-04-17 |
| GB1505376A (en) | 1978-03-30 |
| ES437556A1 (es) | 1977-01-16 |
| FR2270712A1 (US20080293856A1-20081127-C00150.png) | 1975-12-05 |
| NL7505426A (nl) | 1975-11-12 |
| JPS50145087A (US20080293856A1-20081127-C00150.png) | 1975-11-21 |
| AT374975B (de) | 1984-06-25 |
| AU8065275A (en) | 1976-11-04 |
| ATA358975A (de) | 1983-10-15 |
| US3955154A (en) | 1976-05-04 |
| CA1029821A (en) | 1978-04-18 |
| DE2520825A1 (de) | 1975-11-20 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| D2 | Grant after examination | ||
| 8339 | Ceased/non-payment of the annual fee |