DE2516393A1 - Verfahren zum herstellen von metall- oxyd-halbleiter-schaltungen - Google Patents
Verfahren zum herstellen von metall- oxyd-halbleiter-schaltungenInfo
- Publication number
- DE2516393A1 DE2516393A1 DE19752516393 DE2516393A DE2516393A1 DE 2516393 A1 DE2516393 A1 DE 2516393A1 DE 19752516393 DE19752516393 DE 19752516393 DE 2516393 A DE2516393 A DE 2516393A DE 2516393 A1 DE2516393 A1 DE 2516393A1
- Authority
- DE
- Germany
- Prior art keywords
- source
- layer
- areas
- insulating material
- oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims description 37
- 239000004065 semiconductor Substances 0.000 title claims description 33
- 238000004519 manufacturing process Methods 0.000 title claims description 17
- 239000002184 metal Substances 0.000 title description 11
- 239000000463 material Substances 0.000 claims description 76
- 239000011810 insulating material Substances 0.000 claims description 54
- 239000010410 layer Substances 0.000 claims description 35
- 239000000758 substrate Substances 0.000 claims description 23
- 239000002019 doping agent Substances 0.000 claims description 19
- 238000005530 etching Methods 0.000 claims description 18
- 238000010438 heat treatment Methods 0.000 claims description 10
- 239000004020 conductor Substances 0.000 claims description 8
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 7
- 229910052796 boron Inorganic materials 0.000 claims description 7
- 230000002209 hydrophobic effect Effects 0.000 claims description 6
- 239000002344 surface layer Substances 0.000 claims description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 5
- 229910052698 phosphorus Inorganic materials 0.000 claims description 5
- 239000011574 phosphorus Substances 0.000 claims description 5
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 239000012811 non-conductive material Substances 0.000 claims description 2
- 125000004430 oxygen atom Chemical group O* 0.000 claims description 2
- 238000009413 insulation Methods 0.000 claims 5
- 238000006243 chemical reaction Methods 0.000 claims 2
- 230000005669 field effect Effects 0.000 claims 2
- 230000008021 deposition Effects 0.000 claims 1
- 238000002955 isolation Methods 0.000 claims 1
- 229910044991 metal oxide Inorganic materials 0.000 claims 1
- 150000004706 metal oxides Chemical class 0.000 claims 1
- 230000000007 visual effect Effects 0.000 claims 1
- 229910052810 boron oxide Inorganic materials 0.000 description 10
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 7
- 229910001392 phosphorus oxide Inorganic materials 0.000 description 5
- VSAISIQCTGDGPU-UHFFFAOYSA-N tetraphosphorus hexaoxide Chemical compound O1P(O2)OP3OP1OP2O3 VSAISIQCTGDGPU-UHFFFAOYSA-N 0.000 description 5
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 238000010186 staining Methods 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- -1 boron oxide lead Chemical compound 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000002045 lasting effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/914—Doping
- Y10S438/919—Compensation doping
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Electrodes Of Semiconductors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Weting (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US466566A US3912558A (en) | 1974-05-03 | 1974-05-03 | Method of MOS circuit fabrication |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2516393A1 true DE2516393A1 (de) | 1975-11-13 |
Family
ID=23852254
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19752516393 Pending DE2516393A1 (de) | 1974-05-03 | 1975-04-15 | Verfahren zum herstellen von metall- oxyd-halbleiter-schaltungen |
Country Status (6)
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4030952A (en) * | 1974-04-18 | 1977-06-21 | Fairchild Camera And Instrument Corporation | Method of MOS circuit fabrication |
| US4097314A (en) * | 1976-12-30 | 1978-06-27 | Rca Corp. | Method of making a sapphire gate transistor |
| JPS53115173A (en) * | 1977-03-18 | 1978-10-07 | Hitachi Ltd | Production of semiconductor device |
| JPS5492175A (en) * | 1977-12-29 | 1979-07-21 | Fujitsu Ltd | Manufacture of semiconductor device |
| US4542037A (en) * | 1980-04-28 | 1985-09-17 | Fairchild Camera And Instrument Corporation | Laser induced flow of glass bonded materials |
| CA1174285A (en) * | 1980-04-28 | 1984-09-11 | Michelangelo Delfino | Laser induced flow of integrated circuit structure materials |
| JP2565317B2 (ja) * | 1986-12-03 | 1996-12-18 | 富士通株式会社 | 半導体装置の製造方法 |
| JP3123937B2 (ja) * | 1996-11-26 | 2001-01-15 | 日本電気株式会社 | 半導体装置およびその製造方法 |
| DE60037199T2 (de) | 2000-12-08 | 2008-10-02 | Sony Deutschland Gmbh | Abgestimmte multifunktionelle Linker-Moleküle für elektronischen Ladungstransport durch organisch-anorganische zusammengesetzte Strukturen und Anwendung davon |
| US9701629B2 (en) | 2000-12-08 | 2017-07-11 | Sony Deutschland Gmbh | Use of dithiocarbamate esters and bis-dithiocarbamate esters in the preparation of organic-inorganic nanocomposites |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3476619A (en) * | 1966-09-13 | 1969-11-04 | Motorola Inc | Semiconductor device stabilization |
| DE2040180B2 (de) * | 1970-01-22 | 1977-08-25 | Intel Corp, Mountain View, Calif. (V.St.A.) | Verfahren zur verhinderung von mechanischen bruechen einer duennen, die oberflaeche eines halbleiterkoerpers ueberdeckende isolierschichten ueberziehenden elektrisch leitenden schicht |
| US3756876A (en) * | 1970-10-27 | 1973-09-04 | Cogar Corp | Fabrication process for field effect and bipolar transistor devices |
| JPS4929785B1 (US08124317-20120228-C00018.png) * | 1970-10-30 | 1974-08-07 |
-
1974
- 1974-05-03 US US466566A patent/US3912558A/en not_active Expired - Lifetime
-
1975
- 1975-03-18 CA CA222,368A patent/CA1008973A/en not_active Expired
- 1975-03-19 GB GB11462/75A patent/GB1494708A/en not_active Expired
- 1975-04-03 JP JP3986875A patent/JPS5543631B2/ja not_active Expired
- 1975-04-15 DE DE19752516393 patent/DE2516393A1/de active Pending
- 1975-05-02 FR FR7513834A patent/FR2269792A1/fr not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5543631B2 (US08124317-20120228-C00018.png) | 1980-11-07 |
| CA1008973A (en) | 1977-04-19 |
| US3912558A (en) | 1975-10-14 |
| GB1494708A (en) | 1977-12-14 |
| JPS50142174A (US08124317-20120228-C00018.png) | 1975-11-15 |
| FR2269792A1 (US08124317-20120228-C00018.png) | 1975-11-28 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OHJ | Non-payment of the annual fee |