DE2505276A1 - Impatt-diode und verfahren zu ihrer herstellung - Google Patents
Impatt-diode und verfahren zu ihrer herstellungInfo
- Publication number
- DE2505276A1 DE2505276A1 DE19752505276 DE2505276A DE2505276A1 DE 2505276 A1 DE2505276 A1 DE 2505276A1 DE 19752505276 DE19752505276 DE 19752505276 DE 2505276 A DE2505276 A DE 2505276A DE 2505276 A1 DE2505276 A1 DE 2505276A1
- Authority
- DE
- Germany
- Prior art keywords
- epitaxial layer
- doped
- boron
- ions
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 4
- 229910052796 boron Inorganic materials 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 12
- 229910052710 silicon Inorganic materials 0.000 claims description 12
- 239000010703 silicon Substances 0.000 claims description 12
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 9
- 150000002500 ions Chemical class 0.000 claims description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 5
- 238000005468 ion implantation Methods 0.000 claims description 4
- 238000010849 ion bombardment Methods 0.000 claims description 2
- 239000000344 soap Substances 0.000 claims 1
- 239000012535 impurity Substances 0.000 description 10
- 239000004065 semiconductor Substances 0.000 description 6
- -1 boron ions Chemical class 0.000 description 3
- 230000035515 penetration Effects 0.000 description 2
- 241000903210 Bryconamericus alpha Species 0.000 description 1
- 241000282596 Hylobatidae Species 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- High Energy & Nuclear Physics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
- Recrystallisation Techniques (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB586574A GB1447723A (en) | 1974-02-08 | 1974-02-08 | Semiconductor devices |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2505276A1 true DE2505276A1 (de) | 1975-08-14 |
Family
ID=9804073
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19752505276 Withdrawn DE2505276A1 (de) | 1974-02-08 | 1975-02-07 | Impatt-diode und verfahren zu ihrer herstellung |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US3961989A (OSRAM) |
| JP (1) | JPS5714031B2 (OSRAM) |
| CA (1) | CA1016270A (OSRAM) |
| DE (1) | DE2505276A1 (OSRAM) |
| FR (1) | FR2260867B1 (OSRAM) |
| GB (1) | GB1447723A (OSRAM) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4030943A (en) * | 1976-05-21 | 1977-06-21 | Hughes Aircraft Company | Planar process for making high frequency ion implanted passivated semiconductor devices and microwave integrated circuits |
| GB2050802B (en) * | 1979-06-12 | 1983-03-02 | Imp Group Ltd | Feeding tobacco webs |
| DE3839210A1 (de) * | 1988-11-19 | 1990-05-23 | Asea Brown Boveri | Verfahren zum axialen einstellen der traegerlebensdauer |
| US7332750B1 (en) | 2000-09-01 | 2008-02-19 | Fairchild Semiconductor Corporation | Power semiconductor device with improved unclamped inductive switching capability and process for forming same |
| DE102006002903A1 (de) * | 2006-01-20 | 2007-08-02 | Infineon Technologies Austria Ag | Verfahren zur Behandlung eines Sauerstoff enthaltenden Halbleiterwafers und Halbleiterbauelement |
| ATE522927T1 (de) * | 2006-01-20 | 2011-09-15 | Infineon Technologies Austria | Verfahren zur herstellung einer n-dotierten zone in einem halbleiterwafer und halbleiterbauelement |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3509428A (en) * | 1967-10-18 | 1970-04-28 | Hughes Aircraft Co | Ion-implanted impatt diode |
| US3595716A (en) * | 1968-05-16 | 1971-07-27 | Philips Corp | Method of manufacturing semiconductor devices |
| GB1332931A (en) * | 1970-01-15 | 1973-10-10 | Mullard Ltd | Methods of manufacturing a semiconductor device |
| US3756862A (en) * | 1971-12-21 | 1973-09-04 | Ibm | Proton enhanced diffusion methods |
-
1974
- 1974-02-08 GB GB586574A patent/GB1447723A/en not_active Expired
-
1975
- 1975-02-04 US US05/547,013 patent/US3961989A/en not_active Expired - Lifetime
- 1975-02-06 CA CA219,490A patent/CA1016270A/en not_active Expired
- 1975-02-07 JP JP1615575A patent/JPS5714031B2/ja not_active Expired
- 1975-02-07 FR FR7503916A patent/FR2260867B1/fr not_active Expired
- 1975-02-07 DE DE19752505276 patent/DE2505276A1/de not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| FR2260867A1 (OSRAM) | 1975-09-05 |
| FR2260867B1 (OSRAM) | 1978-10-27 |
| JPS50115985A (OSRAM) | 1975-09-10 |
| US3961989A (en) | 1976-06-08 |
| GB1447723A (en) | 1976-08-25 |
| JPS5714031B2 (OSRAM) | 1982-03-20 |
| CA1016270A (en) | 1977-08-23 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OF | Willingness to grant licences before publication of examined application | ||
| 8141 | Disposal/no request for examination |