DE2455283A1 - Thyristor - Google Patents
ThyristorInfo
- Publication number
- DE2455283A1 DE2455283A1 DE19742455283 DE2455283A DE2455283A1 DE 2455283 A1 DE2455283 A1 DE 2455283A1 DE 19742455283 DE19742455283 DE 19742455283 DE 2455283 A DE2455283 A DE 2455283A DE 2455283 A1 DE2455283 A1 DE 2455283A1
- Authority
- DE
- Germany
- Prior art keywords
- junction
- thyristor
- base layer
- depth
- impurity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000012535 impurity Substances 0.000 claims description 25
- 239000000126 substance Substances 0.000 claims description 5
- 230000007423 decrease Effects 0.000 claims description 3
- 230000035515 penetration Effects 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims description 2
- 230000002452 interceptive effect Effects 0.000 claims 3
- 230000007704 transition Effects 0.000 description 14
- 238000009792 diffusion process Methods 0.000 description 7
- 238000005275 alloying Methods 0.000 description 5
- 239000011888 foil Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- KAPYVWKEUSXLKC-UHFFFAOYSA-N [Sb].[Au] Chemical compound [Sb].[Au] KAPYVWKEUSXLKC-UHFFFAOYSA-N 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- JCALBVZBIRXHMQ-UHFFFAOYSA-N [[hydroxy-(phosphonoamino)phosphoryl]amino]phosphonic acid Chemical compound OP(O)(=O)NP(O)(=O)NP(O)(O)=O JCALBVZBIRXHMQ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000007373 indentation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
- H10D62/192—Base regions of thyristors
- H10D62/206—Cathode base regions of thyristors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
- H10D62/148—Cathode regions of thyristors
Landscapes
- Thyristors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SE7316408A SE378479B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1973-12-05 | 1973-12-05 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2455283A1 true DE2455283A1 (de) | 1975-06-12 |
Family
ID=20319280
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19742455283 Pending DE2455283A1 (de) | 1973-12-05 | 1974-11-22 | Thyristor |
Country Status (3)
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3198167B2 (ja) | 1991-11-27 | 2001-08-13 | パワー イノベイションズ リミテッド | Ｐｎｐｎ半導体装置 |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| IN144812B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1976-01-22 | 1978-07-15 | Westinghouse Electric Corp | |
| FR2761379B1 (fr) * | 1997-03-28 | 1999-07-09 | Europ Propulsion | Procede de realisation de structures fibreuses annulaires, notamment pour la fabrication de pieces en materiau composite |
-
1973
- 1973-12-05 SE SE7316408A patent/SE378479B/xx unknown
-
1974
- 1974-11-22 DE DE19742455283 patent/DE2455283A1/de active Pending
- 1974-12-04 FR FR7439650A patent/FR2254107A1/fr not_active Withdrawn
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3198167B2 (ja) | 1991-11-27 | 2001-08-13 | パワー イノベイションズ リミテッド | Ｐｎｐｎ半導体装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2254107A1 (en) | 1975-07-04 |
| SE378479B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1975-09-01 |
| SE7316408L (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1975-06-06 |
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