DE2424607A1 - Speicherzelle mit einem einzelnen bipolartransistor und verfahren zu ihrer herstellung - Google Patents
Speicherzelle mit einem einzelnen bipolartransistor und verfahren zu ihrer herstellungInfo
- Publication number
- DE2424607A1 DE2424607A1 DE2424607A DE2424607A DE2424607A1 DE 2424607 A1 DE2424607 A1 DE 2424607A1 DE 2424607 A DE2424607 A DE 2424607A DE 2424607 A DE2424607 A DE 2424607A DE 2424607 A1 DE2424607 A1 DE 2424607A1
- Authority
- DE
- Germany
- Prior art keywords
- base
- layer
- zone
- collector
- emitter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims description 20
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 210000000352 storage cell Anatomy 0.000 title claims 2
- 239000000758 substrate Substances 0.000 claims description 22
- 239000004065 semiconductor Substances 0.000 claims description 21
- 230000007704 transition Effects 0.000 claims description 14
- 239000012774 insulation material Substances 0.000 claims description 7
- 230000007423 decrease Effects 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- 238000001465 metallisation Methods 0.000 claims description 3
- 210000004027 cell Anatomy 0.000 claims 7
- 238000002955 isolation Methods 0.000 claims 1
- 230000036316 preload Effects 0.000 claims 1
- 230000015556 catabolic process Effects 0.000 description 12
- 238000003860 storage Methods 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 239000012535 impurity Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000003071 parasitic effect Effects 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 230000003321 amplification Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000000779 depleting effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000005549 size reduction Methods 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
- G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/10—DRAM devices comprising bipolar components
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
- H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
- H10D84/615—Combinations of vertical BJTs and one or more of resistors or capacitors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Semiconductor Memories (AREA)
- Bipolar Transistors (AREA)
- Semiconductor Integrated Circuits (AREA)
- Bipolar Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US36249573A | 1973-05-21 | 1973-05-21 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2424607A1 true DE2424607A1 (de) | 1974-12-12 |
Family
ID=23426344
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2424607A Pending DE2424607A1 (de) | 1973-05-21 | 1974-05-21 | Speicherzelle mit einem einzelnen bipolartransistor und verfahren zu ihrer herstellung |
Country Status (7)
| Country | Link |
|---|---|
| JP (1) | JPS5021684A (enrdf_load_stackoverflow) |
| CA (1) | CA1030263A (enrdf_load_stackoverflow) |
| DE (1) | DE2424607A1 (enrdf_load_stackoverflow) |
| FR (1) | FR2231074A1 (enrdf_load_stackoverflow) |
| GB (1) | GB1446386A (enrdf_load_stackoverflow) |
| IT (1) | IT1012682B (enrdf_load_stackoverflow) |
| NL (1) | NL7406749A (enrdf_load_stackoverflow) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5210904A (en) * | 1976-05-26 | 1977-01-27 | Nippon Kokuen Kogyo Kk | Plunger |
| JPS53111406U (enrdf_load_stackoverflow) * | 1977-02-14 | 1978-09-06 | ||
| JPS5424627A (en) * | 1977-07-27 | 1979-02-24 | Mitsubishi Gas Chemical Co | Removinggagent for phtoresist |
| GB2006523B (en) * | 1977-10-13 | 1982-12-01 | Mohsen A M | Dynamic ram memory and vertical charge coupled dynamic storage cell therefor |
| JPS55130079U (enrdf_load_stackoverflow) * | 1979-03-09 | 1980-09-13 |
-
1974
- 1974-05-03 CA CA198,905A patent/CA1030263A/en not_active Expired
- 1974-05-06 GB GB1985074A patent/GB1446386A/en not_active Expired
- 1974-05-20 JP JP49056441A patent/JPS5021684A/ja active Pending
- 1974-05-20 NL NL7406749A patent/NL7406749A/xx unknown
- 1974-05-20 FR FR7417517A patent/FR2231074A1/fr not_active Withdrawn
- 1974-05-21 IT IT23005/74A patent/IT1012682B/it active
- 1974-05-21 DE DE2424607A patent/DE2424607A1/de active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| IT1012682B (it) | 1977-03-10 |
| GB1446386A (en) | 1976-08-18 |
| CA1030263A (en) | 1978-04-25 |
| JPS5021684A (enrdf_load_stackoverflow) | 1975-03-07 |
| FR2231074A1 (enrdf_load_stackoverflow) | 1974-12-20 |
| NL7406749A (enrdf_load_stackoverflow) | 1974-11-25 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OHJ | Non-payment of the annual fee |