CA1030263A - Single bipolar transistor memory cell and method - Google Patents

Single bipolar transistor memory cell and method

Info

Publication number
CA1030263A
CA1030263A CA198,905A CA198905A CA1030263A CA 1030263 A CA1030263 A CA 1030263A CA 198905 A CA198905 A CA 198905A CA 1030263 A CA1030263 A CA 1030263A
Authority
CA
Canada
Prior art keywords
memory cell
bipolar transistor
transistor memory
single bipolar
cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA198,905A
Other languages
English (en)
French (fr)
Other versions
CA198905S (en
Inventor
James A. Marley (Jr.)
Bohumil Polata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Signetics Corp
Original Assignee
Signetics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Signetics Corp filed Critical Signetics Corp
Application granted granted Critical
Publication of CA1030263A publication Critical patent/CA1030263A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B12/00Dynamic random access memory [DRAM] devices
    • H10B12/10DRAM devices comprising bipolar components
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H10D84/615Combinations of vertical BJTs and one or more of resistors or capacitors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Semiconductor Memories (AREA)
  • Bipolar Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
CA198,905A 1973-05-21 1974-05-03 Single bipolar transistor memory cell and method Expired CA1030263A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US36249573A 1973-05-21 1973-05-21

Publications (1)

Publication Number Publication Date
CA1030263A true CA1030263A (en) 1978-04-25

Family

ID=23426344

Family Applications (1)

Application Number Title Priority Date Filing Date
CA198,905A Expired CA1030263A (en) 1973-05-21 1974-05-03 Single bipolar transistor memory cell and method

Country Status (7)

Country Link
JP (1) JPS5021684A (enrdf_load_stackoverflow)
CA (1) CA1030263A (enrdf_load_stackoverflow)
DE (1) DE2424607A1 (enrdf_load_stackoverflow)
FR (1) FR2231074A1 (enrdf_load_stackoverflow)
GB (1) GB1446386A (enrdf_load_stackoverflow)
IT (1) IT1012682B (enrdf_load_stackoverflow)
NL (1) NL7406749A (enrdf_load_stackoverflow)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5210904A (en) * 1976-05-26 1977-01-27 Nippon Kokuen Kogyo Kk Plunger
JPS53111406U (enrdf_load_stackoverflow) * 1977-02-14 1978-09-06
JPS5424627A (en) * 1977-07-27 1979-02-24 Mitsubishi Gas Chemical Co Removinggagent for phtoresist
GB2006523B (en) * 1977-10-13 1982-12-01 Mohsen A M Dynamic ram memory and vertical charge coupled dynamic storage cell therefor
JPS55130079U (enrdf_load_stackoverflow) * 1979-03-09 1980-09-13

Also Published As

Publication number Publication date
IT1012682B (it) 1977-03-10
GB1446386A (en) 1976-08-18
JPS5021684A (enrdf_load_stackoverflow) 1975-03-07
FR2231074A1 (enrdf_load_stackoverflow) 1974-12-20
NL7406749A (enrdf_load_stackoverflow) 1974-11-25
DE2424607A1 (de) 1974-12-12

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